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IRF540NSTRLPBF Transistors - FETs, MOSFETs - Single by Infineon Technologies
IRF540NSTRLPBF is a Transistors - FETs, MOSFETs - Single model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO-263-3 under the Infineon Technologies brand listing. MOSFET N-CH 100V 33A D2PAK. TrustCompo combines the available model, brand, hierarchy, and specification details around IRF540NSTRLPBF so buyers can move faster from review to quotation.
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Datasheet
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Key specifications
Series
HEXFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 100V 33A D2PAK
key Attributes
-
Datasheet
View IRF540NSTRLPBF DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
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AS9120B
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ISO 14001
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ESD Control
Electrostatic handling standards to help protect sensitive components.
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Product overview
Overview
The IRF540NSTRLPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications and is widely used in various electronic circuits, including power supplies, motor drivers, and other high-current applications.
Key Features:
- Type: N-channel MOSFET
- Package: The IRF540NSTRLPBF is typically available in a TO-220 package, which is a standard package for power transistors, providing good thermal performance and ease of mounting.
- Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 100V, making it suitable for applications that require high voltage handling.
- Current Rating: It can handle a continuous drain current (I_D) of up to 33A at a temperature of 25°C, which allows it to drive significant loads.
- R_DS(on): The on-resistance (R_DS(on)) is typically around 0.044 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing efficiency.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 2V to 4V, which indicates the minimum gate voltage required to turn the MOSFET on.
- Switching Speed: The IRF540NSTRLPBF features fast switching capabilities, making it suitable for high-frequency applications.
- Thermal Characteristics: The device has a maximum junction temperature (T_J) of 175°C, allowing it to operate in demanding thermal environments. It also has a thermal resistance from junction to case (RθJC) that ensures effective heat dissipation.
- Body Diode: The MOSFET includes an intrinsic body diode, which allows for current flow in the reverse direction, useful in applications like H-bridge configurations for motor control.
Applications:
- Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
- Motor Control: Ideal for driving DC motors and other inductive loads due to its fast switching and high current capabilities.
- Inverters: Commonly found in inverter circuits for renewable energy applications, such as solar inverters.
- Lighting: Utilized in LED drivers and other lighting control applications.
Electrical Characteristics:
- Gate-Source Voltage (V_GS): Maximum of ±20V.
- Drain-Source Breakdown Voltage (V(BR)DSS): 100V minimum.
- Input Capacitance (C_iss): Typically around 1,200 pF, which affects the gate drive requirements.
Conclusion:
The IRF540NSTRLPBF is a robust and versatile N-channel MOSFET that offers high performance in power applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it a popular choice among engineers and designers for a wide range of electronic applications.
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Popular Specs Surfaced First
Product Attribute
Part Status
Active
Product Attribute
REACH Status
REACH Unaffected
Product Attribute
ECCN
EAR99
Product Attribute
Lead Free
Lead Free
Product Attribute
Mounting Type
Surface Mount
Product Attribute
Factory Lead Time
12 Weeks
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Published
1997
Packaging
Tape & Reel (TR)
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Reflow Temperature-Max (S)
30
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Gate To Source Voltage (Vgs)
20V
Voltage - Rated DC
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Width
9.65mm
Height
4.826mm
Drain To Source Breakdown Voltage
100V
Threshold Voltage
4V
Length
10.668mm
Fall Time (Typ)
35 ns
Power Dissipation
130W
Power Dissipation-Max
130W Tc
Rds On (Max) @ Id, Vgs
44m Ω @ 16A, 10V
Recovery Time
170 ns
Input Capacitance (Ciss) (Max) @ Vds
1960pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
71nC @ 10V
Continuous Drain Current (ID)
33A
Current - Continuous Drain (Id) @ 25°C
33A Tc
Resistance
44MOhm
Manufacturer'S Part No.
IRF540NSTRLPBF
Current Rating
33A
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS non-compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Turn On Delay Time
11 ns
Number Of Elements
1
Dual Supply Voltage
100V
Turn-Off Delay Time
39 ns
Rise Time
35ns
Common questions
Product FAQ
Quick answers for buyers reviewing IRF540NSTRLPBF, stock, documentation, and sourcing steps.
What is IRF540NSTRLPBF?
IRF540NSTRLPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for IRF540NSTRLPBF?
IRF540NSTRLPBF is listed with package reference TO-263-3. The current product description is MOSFET N-CH 100V 33A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is IRF540NSTRLPBF available in stock?
This page currently shows 37330 units in stock and 56012 units available for IRF540NSTRLPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for IRF540NSTRLPBF?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRF540NSTRLPBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for IRF540NSTRLPBF?
Yes. This page links to the datasheet for IRF540NSTRLPBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify IRF540NSTRLPBF before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IRF540NSTRLPBF before approving the order.
Transistors - FETs, MOSFETs - Single
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