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FDV303N Transistors - FETs, MOSFETs - Single by ON Semiconductor

FDV303N is a Transistors - FETs, MOSFETs - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SOT-23 under the ON Semiconductor brand listing. MOSFET N-CH 25V 680MA SOT-23. TrustCompo combines the available model, brand, hierarchy, and specification details around FDV303N so buyers can move faster from review to quotation.

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Datasheet
FDV303N Transistors - FETs, MOSFETs - Single by ON Semiconductor | TrustCompo
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Part Number

FDV303N

Internal code

TCE000036806

Package

SOT-23

Manufacturer

ON Semiconductor

Key specifications

Series

-

Min Quantity

1

Description

MOSFET N-CH 25V 680MA SOT-23

key Attributes

-

Technical document

Open The Official Datasheet

Review the latest datasheet for FDV303N from ON Semiconductor in a separate tab so engineers and buyers can check package, electrical characteristics, and application details without leaving this product page.

View FDV303N Datasheet

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RoHS, REACH, and lead-free documentation can be confirmed during RFQ
Traceability and Certificate of Conformance support available on request
Pre-shipment inspection report support for quality review

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Globally recognized certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

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Product overview

Overview

The FDV303N is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for low-voltage applications and is particularly suitable for switching and amplification purposes in various electronic circuits.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The FDV303N typically comes in a small, surface-mount package, which allows for efficient use of space on printed circuit boards (PCBs).
  3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to moderate voltage applications.
  4. Current Rating: It can handle a continuous drain current (I_D) of approximately 3A, which is adequate for many low-power applications.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, typically in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
  6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is relatively low, allowing the MOSFET to be driven by standard logic levels, which is beneficial for interfacing with microcontrollers and other digital logic devices.
  7. Switching Speed: The FDV303N features fast switching capabilities, making it suitable for high-frequency applications, such as in power management circuits and DC-DC converters.
  8. Thermal Characteristics: The device has good thermal performance, with a maximum junction temperature rating that allows it to operate reliably under various thermal conditions.

Applications:

The FDV303N is commonly used in a variety of applications, including:

  • Power Management: Used in power supply circuits for efficient switching.
  • Motor Control: Suitable for driving small motors in robotics and automation.
  • Signal Switching: Can be used in signal routing applications where low on-resistance is critical.
  • LED Drivers: Ideal for controlling LED lighting systems due to its efficient switching characteristics.

Electrical Characteristics:

  • Gate-Source Voltage (V_GS): The maximum gate-source voltage is typically around ±20V.
  • Body Diode: The FDV303N includes an intrinsic body diode, which allows for current flow in the reverse direction, useful in certain applications like inductive load switching.

Conclusion:

The FDV303N from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a range of low-voltage applications. Its compact size, low on-resistance, and fast switching capabilities make it an excellent choice for designers looking to optimize performance in their electronic circuits.

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Popular Specs Surfaced First

Product Parameter

Turn-Off Delay Time

17 ns

Product Parameter

Number Of Channels

1

Product Parameter

Time@Peak Reflow Temperature-Max (S)

30

Product Parameter

Number Of Elements

1

Product Parameter

Turn On Delay Time

3 ns

Product Parameter

Terminal Finish

TIN

Turn-Off Delay Time
17 ns
Number Of Channels
1
Time@Peak Reflow Temperature-Max (S)
30
Number Of Elements
1
Turn On Delay Time
3 ns
Terminal Finish
TIN
Dual Supply Voltage
25V
Rise Time
8.5ns
JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Part Status
Active
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
1997
Packaging
Tape & Reel (TR)
Factory Lead Time
10 Weeks
Termination
SMD/SMT
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Manufacturer
ON Semiconductor
Power Dissipation
350mW
Height
1.11mm
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Lifecycle Status
ACTIVE (Last Updated: 16 hours ago)
Package / Case
TO-236-3, SC-59, SOT-23-3
Vgs(Th) (Max) @ Id
1.5V @ 250μA
Drive Voltage (Max Rds On,Min Rds On)
2.7V 4.5V
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Vgs (Max)
±8V
Gate To Source Voltage (Vgs)
8V
Number Of Terminations
3
Width
3.05mm
Drain To Source Breakdown Voltage
25V
Voltage - Rated DC
25V
Power Dissipation-Max
350mW Ta
Length
2.92mm
Threshold Voltage
800mV
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Voltage
20V
Current
12A
Current - Continuous Drain (Id) @ 25°C
680mA Ta
Continuous Drain Current (ID)
680mA
Gate Charge (Qg) (Max) @ Vgs
2.3nC @ 4.5V
Fall Time (Typ)
8.5 ns
Nominal Vgs
800 mV
Resistance
450mOhm
Current Rating
680mA
Rds On (Max) @ Id, Vgs
450m Ω @ 500mA, 4.5V
Manufacturer'S Part No.
FDV303N

Common questions

Product FAQ

Quick answers for buyers reviewing FDV303N, stock, documentation, and sourcing steps.

What is FDV303N?

FDV303N is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDV303N?

FDV303N is listed with package reference SOT-23. The current product description is MOSFET N-CH 25V 680MA SOT-23, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDV303N available in stock?

This page currently shows 72710 units in stock and 10369 units available for FDV303N. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for FDV303N?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDV303N by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FDV303N?

Yes. This page links to the datasheet for FDV303N by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify FDV303N before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDV303N before approving the order.

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