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FDMS86163P Transistors - FETs, MOSFETs - Single by ON Semiconductor

FDMS86163P is a Transistors - FETs, MOSFETs - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. MOSFET P-CH 100V 7.9A POWER56. TrustCompo combines the available model, brand, hierarchy, and specification details around FDMS86163P so buyers can move faster from review to quotation.

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Datasheet
FDMS86163P Transistors - FETs, MOSFETs - Single by ON Semiconductor | TrustCompo
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Part Number

FDMS86163P

Internal code

TCE000035081

Package

-

Manufacturer

ON Semiconductor

Key specifications

Series

PowerTrench®

Min Quantity

1

Description

MOSFET P-CH 100V 7.9A POWER56

key Attributes

-

Technical document

Open The Official Datasheet

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RoHS, REACH, and lead-free documentation can be confirmed during RFQ
Traceability and Certificate of Conformance support available on request
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Globally recognized certifications

4 certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

Ordering workflow

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Product overview

Overview

The FDMS86163P is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. MOSFETs are semiconductor devices commonly used for switching and amplifying electronic signals in various applications, particularly in power management circuits. The FDMS86163P specifically belongs to ON Semiconductor's family of power MOSFETs designed for high-power applications.

Key Features:

  • High Voltage Rating: The FDMS86163P is designed to handle high voltages, making it suitable for applications requiring high voltage switching and power control.

  • Low On-Resistance: Features low on-resistance (RDS(on)) characteristics, which results in reduced power losses and improved efficiency in power management applications.

  • High Current Handling Capability: Capable of handling high drain currents, making it suitable for high-power applications such as motor control, power supplies, and inverters.

  • Low Gate Drive Voltage: Requires a low gate drive voltage for activation, which reduces power consumption and simplifies control circuitry design.

  • Fast Switching Speed: Offers fast switching times, enabling rapid transitions between on and off states, essential for high-frequency switching applications.

  • Enhancement Mode Operation: Operates in enhancement mode, meaning it requires a positive voltage at the gate terminal to allow current flow between the source and drain terminals.

  • Thermal Performance: Designed with features to enhance thermal dissipation, ensuring reliable operation under high-power conditions.

  • Surface Mount Package: Packaged in a surface mount format, facilitating easy integration onto printed circuit boards (PCBs) and enabling high-density designs.

Applications:

  • Power Supplies: Used in power supply circuits for voltage regulation, power conversion, and DC-DC conversion in various electronic devices and systems.

  • Motor Control: Employed in motor control circuits for controlling the speed, direction, and torque of electric motors in applications such as industrial machinery, automotive systems, and robotics.

  • Inverters: Integrated into inverter circuits for converting DC power to AC power in applications such as solar inverters, uninterruptible power supplies (UPS), and motor drives.

  • Switched-Mode Power Supplies (SMPS): Utilized in SMPS circuits for efficient power conversion and regulation in electronic devices and equipment.

  • Automotive Electronics: Deployed in automotive electronics for power management, motor control, and other high-power applications in vehicles.

  • Industrial Equipment: Used in various industrial equipment and machinery for power switching, control, and regulation purposes.

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Popular Specs Surfaced First

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

RoHS Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-F5
Part Status
Active
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
ECCN
EAR99
Mounting Type
Surface Mount
Factory Lead Time
16 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Reach Compliance Code
not_compliant
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Manufacturer
ON Semiconductor
Height
1.1mm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Published
2017
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Package / Case
8-PowerTDFN
Series
PowerTrench®
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Contact Plating
Tin
Mount
Surface Mount
Pbfree Code
yes
Length
5mm
Number Of Terminations
5
Number Of Pins
8
Terminal Form
FLAT
Power Dissipation-Max
2.5W Ta 104W Tc
Peak Reflow Temperature (Cel)
NOT SPECIFIED
JEDEC-95 Code
MO-240AA
Reflow Temperature-Max (S)
NOT SPECIFIED
Weight
68.1mg
Gate To Source Voltage (Vgs)
25V
Vgs (Max)
±25V
Drain To Source Breakdown Voltage
-100V
Gate Charge (Qg) (Max) @ Vgs
59nC @ 10V
Power Dissipation
104W
Width
5.85mm
Manufacturer'S Part No.
FDMS86163P
Input Capacitance (Ciss) (Max) @ Vds
4085pF @ 50V
Continuous Drain Current (ID)
-50A
Rds On (Max) @ Id, Vgs
22m Ω @ 7.9A, 10V
Fall Time (Typ)
6.9 ns
Drain-Source On Resistance-Max
0.022Ohm
Drain Current-Max (Abs) (ID)
7.9A
Current - Continuous Drain (Id) @ 25°C
7.9A Ta 50A Tc
Threshold Voltage
-2.8V
Number Of Channels
1
Number Of Elements
1
Drain To Source Voltage (Vdss)
100V
Turn On Delay Time
17 ns
Turn-Off Delay Time
33 ns
Rise Time
8.8ns

Common questions

Product FAQ

Quick answers for buyers reviewing FDMS86163P, stock, documentation, and sourcing steps.

What is FDMS86163P?

FDMS86163P is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDMS86163P?

FDMS86163P is listed with package reference -. The current product description is MOSFET P-CH 100V 7.9A POWER56, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDMS86163P available in stock?

This page currently shows 180082 units in stock and 70232 units available for FDMS86163P. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for FDMS86163P?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDMS86163P by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FDMS86163P?

Yes. This page links to the datasheet for FDMS86163P by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify FDMS86163P before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDMS86163P before approving the order.

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