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FDS6375 Transistors - FETs, MOSFETs - Single by ON Semiconductor

FDS6375 is a Transistors - FETs, MOSFETs - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to 8-SOIC under the ON Semiconductor brand listing. MOSFET P-CH 20V 8A 8-SOIC. TrustCompo combines the available model, brand, hierarchy, and specification details around FDS6375 so buyers can move faster from review to quotation.

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FDS6375 Transistors - FETs, MOSFETs - Single by ON Semiconductor | TrustCompo
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Part Number

FDS6375

Internal code

TCE000035073

Package

8-SOIC

Manufacturer

ON Semiconductor

Key specifications

Series

PowerTrench®

Min Quantity

1

Description

MOSFET P-CH 20V 8A 8-SOIC

key Attributes

-

Technical document

Open The Official Datasheet

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Globally recognized certifications

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ISO 9001

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AS9120B

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ISO 14001

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ESD Control

Electrostatic handling standards to help protect sensitive components.

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Product overview

Overview

The FDS6375 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency power management applications, making it suitable for use in various electronic devices, including power supplies, DC-DC converters, and motor control circuits.

Key Features:

  1. Dual Configuration: The FDS6375 contains two N-channel MOSFETs in a single package, allowing for compact designs and efficient use of board space. This dual configuration is particularly beneficial in applications where space is at a premium.

  2. Low On-Resistance (RDS(on)): The device boasts a low on-resistance, which minimizes conduction losses when the MOSFET is in the 'on' state. This feature is crucial for improving overall efficiency in power applications.

  3. High Current Rating: The FDS6375 is capable of handling significant current levels, making it suitable for high-power applications. Its robust design ensures reliable performance under demanding conditions.

  4. Fast Switching Speed: The MOSFET is designed for fast switching, which is essential for applications that require rapid on/off control. This characteristic helps reduce switching losses and improves the overall efficiency of the circuit.

  5. Thermal Performance: The package is designed to dissipate heat effectively, allowing the FDS6375 to operate at higher temperatures without compromising performance. This is particularly important in high-power applications where thermal management is critical.

  6. Package Type: The FDS6375 is typically available in a compact surface-mount package, such as the SO-8 or similar, which facilitates easy integration into printed circuit boards (PCBs).

  7. Gate Threshold Voltage: The device features a suitable gate threshold voltage, ensuring that it can be driven effectively by standard logic levels, making it compatible with a wide range of control circuits.

Applications:

  • Power Management: Ideal for use in power supply circuits, including buck converters and boost converters.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
  • Battery Management Systems: Can be used in battery protection circuits to enhance safety and efficiency.
  • Consumer Electronics: Commonly found in devices such as laptops, smartphones, and other portable electronics where power efficiency is critical.

Electrical Characteristics:

  • VDS (Drain-Source Voltage): The maximum voltage that can be applied between the drain and source terminals.
  • ID (Continuous Drain Current): The maximum continuous current that the MOSFET can handle.
  • Pulsed Drain Current: The maximum current the device can handle in short pulses, which is higher than the continuous rating.

Conclusion:

The FDS6375 from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that meets the demands of modern electronic applications. Its combination of low on-resistance, high current handling capability, and fast switching speed makes it an excellent choice for designers looking to optimize power efficiency and performance in their circuits.

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2001
Packaging
Tape & Reel (TR)
Factory Lead Time
18 Weeks
Terminal Position
DUAL
Terminal Form
GULL WING
Element Configuration
Single
Package / Case
8-SOIC (0.154, 3.90mm Width)
Manufacturer
ON Semiconductor
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
FET Type
P-Channel
Subcategory
Other Transistors
Nominal Vgs
-700 mV
Vgs(Th) (Max) @ Id
1.5V @ 250μA
Series
PowerTrench®
Contact Plating
Tin
Radiation Hardening
No
Width
4mm
Height
1.5mm
Mount
Surface Mount
Pbfree Code
yes
Length
5mm
Number Of Pins
8
Number Of Terminations
8
Power Dissipation
2.5W
Vgs (Max)
±8V
Voltage - Rated DC
-20V
Weight
130mg
Power Dissipation-Max
2.5W Ta
Gate To Source Voltage (Vgs)
8V
Drain To Source Breakdown Voltage
-20V
Threshold Voltage
-700mV
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Continuous Drain Current (ID)
8A
Drain Current-Max (Abs) (ID)
8A
Fall Time (Typ)
57 ns
Current Rating
-8A
Current - Continuous Drain (Id) @ 25°C
8A Ta
Manufacturer'S Part No.
FDS6375
Rds On (Max) @ Id, Vgs
24m Ω @ 8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
36nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
2694pF @ 10V
Resistance
24MOhm
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS non-compliant
REACH SVHC
No SVHC
JESD-609 Code
e4
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Number Of Elements
1
Dual Supply Voltage
-20V
Drain To Source Voltage (Vdss)
20V
Rise Time
9ns
Turn On Delay Time
12 ns
Turn-Off Delay Time
124 ns

Common questions

Product FAQ

Quick answers for buyers reviewing FDS6375, stock, documentation, and sourcing steps.

What is FDS6375?

FDS6375 is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDS6375?

FDS6375 is listed with package reference 8-SOIC. The current product description is MOSFET P-CH 20V 8A 8-SOIC, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDS6375 available in stock?

This page currently shows 143016 units in stock and 75589 units available for FDS6375. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for FDS6375?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDS6375 by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FDS6375?

Yes. This page links to the datasheet for FDS6375 by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify FDS6375 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDS6375 before approving the order.

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