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SI3433CDV-T1-GE3 Transistors - FETs, MOSFETs - Single by Vishay
SI3433CDV-T1-GE3 is a Transistors - FETs, MOSFETs - Single model from Vishay, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SOT-23-6 under the Vishay brand listing. MOSFET P-CH 20V 6A 6TSOP. TrustCompo combines the available model, brand, hierarchy, and specification details around SI3433CDV-T1-GE3 so buyers can move faster from review to quotation.
RoHS
Datasheet
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Traceability and authenticity checks
Fast RFQ turnaround
Documentation support
Pre-shipment inspection review
Key specifications
Series
TrenchFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET P-CH 20V 6A 6TSOP
key Attributes
-
Datasheet
View SI3433CDV-T1-GE3 DatasheetTechnical document
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Trust signals
Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
Ordering workflow
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1
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2
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3
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Product overview
Overview
The SI3433CDV-T1-GE3 is a high-performance, integrated circuit (IC) from Vishay, designed primarily for use in power management applications, particularly in the realm of USB power delivery and other power-over-Ethernet (PoE) systems. This device is part of Vishay's family of power management solutions, which are known for their efficiency and reliability.
Key Features:
-
Integrated Power Management: The SI3433CDV-T1-GE3 combines multiple functions into a single chip, which helps to reduce the overall component count in a design. This integration typically includes features such as power switching, voltage regulation, and protection mechanisms.
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USB Power Delivery Compliance: This IC is compliant with the USB Power Delivery specification, allowing it to negotiate power levels between devices. This is particularly useful in applications where devices need to dynamically adjust their power consumption based on the requirements of connected peripherals.
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High Efficiency: The device is designed to operate with high efficiency, minimizing power loss during operation. This is crucial for battery-powered applications and helps in reducing heat generation, which can improve the longevity and reliability of the overall system.
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Wide Input Voltage Range: The SI3433CDV-T1-GE3 supports a broad input voltage range, making it versatile for various applications. This feature allows it to be used in different environments and with various power sources.
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Thermal Protection: The IC includes built-in thermal protection features that help prevent overheating, ensuring safe operation under various load conditions. This is particularly important in compact designs where heat dissipation can be a challenge.
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Compact Package: The device is housed in a compact, surface-mount package, which is ideal for space-constrained applications. The small footprint allows for easier integration into printed circuit boards (PCBs).
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Robust Protection Features: The SI3433CDV-T1-GE3 includes various protection features such as over-voltage protection (OVP), under-voltage lockout (UVLO), and short-circuit protection, which enhance the reliability of the device in real-world applications.
Applications:
The SI3433CDV-T1-GE3 is suitable for a wide range of applications, including:
- USB Type-C power delivery systems
- Power-over-Ethernet (PoE) devices
- Battery charging systems
- Industrial automation equipment
- Consumer electronics
Conclusion:
Overall, the SI3433CDV-T1-GE3 from Vishay is a highly integrated, efficient, and reliable power management solution that meets the demands of modern electronic applications. Its combination of features makes it an excellent choice for designers looking to implement advanced power management in their products while maintaining a compact design.
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Popular Specs Surfaced First
Product Parameter
Terminal Finish
Matte Tin (Sn)
Product Parameter
Number Of Channels
1
Product Parameter
Number Of Elements
1
Product Parameter
Turn On Delay Time
20 ns
Product Parameter
Drain To Source Voltage (Vdss)
20V
Product Parameter
Turn-Off Delay Time
50 ns
Terminal Finish
Matte Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
20 ns
Drain To Source Voltage (Vdss)
20V
Turn-Off Delay Time
50 ns
Rise Time
22ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Published
2014
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Height
1.1mm
Manufacturer
Vishay
Package / Case
SOT-23-6 Thin, TSOT-23-6
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Vgs(Th) (Max) @ Id
1V @ 250μA
Series
TrenchFET®
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Vgs (Max)
±8V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Gate To Source Voltage (Vgs)
8V
Drain To Source Breakdown Voltage
-20V
Fall Time (Typ)
20 ns
Length
3.05mm
Power Dissipation
1.6W
Nominal Vgs
-1 V
Threshold Voltage
-1V
Drain Current-Max (Abs) (ID)
6A
Weight
19.986414mg
Width
1.65mm
Current - Continuous Drain (Id) @ 25°C
6A Tc
Resistance
38mOhm
Manufacturer'S Part No.
SI3433CDV-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds
1300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
45nC @ 8V
Rds On (Max) @ Id, Vgs
38m Ω @ 5.2A, 4.5V
Continuous Drain Current (ID)
-5.2A
Power Dissipation-Max
1.6W Ta 3.3W Tc
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
Common questions
Product FAQ
Quick answers for buyers reviewing SI3433CDV-T1-GE3, stock, documentation, and sourcing steps.
What is SI3433CDV-T1-GE3?
SI3433CDV-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for SI3433CDV-T1-GE3?
SI3433CDV-T1-GE3 is listed with package reference SOT-23-6. The current product description is MOSFET P-CH 20V 6A 6TSOP, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is SI3433CDV-T1-GE3 available in stock?
This page currently shows 172779 units in stock and 10182 units available for SI3433CDV-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for SI3433CDV-T1-GE3?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SI3433CDV-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for SI3433CDV-T1-GE3?
Yes. This page links to the datasheet for SI3433CDV-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify SI3433CDV-T1-GE3 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for SI3433CDV-T1-GE3 before approving the order.
Transistors - FETs, MOSFETs - Single
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