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NDS0605 Transistors - FETs, MOSFETs - Single by ON Semiconductor

NDS0605 is a Transistors - FETs, MOSFETs - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SOT-23 under the ON Semiconductor brand listing. MOSFET P-CH 60V 180MA SOT-23. TrustCompo combines the available model, brand, hierarchy, and specification details around NDS0605 so buyers can move faster from review to quotation.

RoHS
Datasheet
NDS0605 Transistors - FETs, MOSFETs - Single by ON Semiconductor | TrustCompo
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Part Number

NDS0605

Internal code

TCE000034167

Package

SOT-23

Manufacturer

ON Semiconductor

Key specifications

Series

-

Min Quantity

1

Description

MOSFET P-CH 60V 180MA SOT-23

key Attributes

-

Technical document

Open The Official Datasheet

Review the latest datasheet for NDS0605 from ON Semiconductor in a separate tab so engineers and buyers can check package, electrical characteristics, and application details without leaving this product page.

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RoHS, REACH, and lead-free documentation can be confirmed during RFQ
Traceability and Certificate of Conformance support available on request
Pre-shipment inspection report support for quality review

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Globally recognized certifications

4 certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

Ordering workflow

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Structured product content

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Product overview

Overview

The NDS0605 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for various applications, including power management, switching, and amplification in electronic circuits.

Key Features:

  1. Type: N-channel MOSFET
  2. Voltage Rating: The NDS0605 typically has a maximum drain-source voltage (V_DS) rating of around 60 volts, making it suitable for medium-voltage applications.
  3. Current Rating: It can handle a continuous drain current (I_D) of approximately 30 amps, which allows it to manage significant power loads.
  4. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.025 ohms at a gate-source voltage (V_GS) of 10 volts. This low on-resistance contributes to reduced power losses and improved efficiency during operation.
  5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is usually in the range of 1 to 3 volts, which indicates the minimum gate voltage required to turn the MOSFET on.
  6. Package Type: The NDS0605 is often available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
  7. Thermal Resistance: The thermal resistance from junction to case (RθJC) is designed to ensure effective heat management, allowing the device to operate reliably under load.

Applications:

  • Power Switching: The NDS0605 is commonly used in power supply circuits, motor drivers, and other applications where efficient switching is required.
  • Load Switching: It can be utilized for switching loads in various electronic devices, including consumer electronics and industrial equipment.
  • Amplification: In some configurations, it can be used for signal amplification in RF applications.

Electrical Characteristics:

  • Maximum Gate-Source Voltage (V_GS): Typically rated at ±20 volts, ensuring that the gate can handle a reasonable range of voltages without damage.
  • Body Diode: The NDS0605 features an intrinsic body diode, which allows for current flow in the reverse direction, useful in applications like synchronous rectification.

Conclusion:

The NDS0605 from ON Semiconductor is a versatile and efficient N-channel MOSFET suitable for a wide range of applications. Its combination of high current handling, low on-resistance, and robust voltage ratings makes it an excellent choice for designers looking to optimize power efficiency in their electronic circuits.

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Popular Specs Surfaced First

Product Parameter

Turn-Off Delay Time

20 ns

Product Parameter

Drain To Source Voltage (Vdss)

60V

Product Parameter

Number Of Channels

1

Product Parameter

Number Of Elements

1

Product Parameter

Turn On Delay Time

5 ns

Product Parameter

Dual Supply Voltage

-60V

Turn-Off Delay Time
20 ns
Drain To Source Voltage (Vdss)
60V
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
5 ns
Dual Supply Voltage
-60V
Rise Time
6.3ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Surface Mount
Factory Lead Time
8 Weeks
Published
2002
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Terminal Form
GULL WING
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Manufacturer
ON Semiconductor
Power Dissipation
360mW
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drain To Source Breakdown Voltage
-60V
FET Type
P-Channel
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Subcategory
Other Transistors
Weight
30mg
Vgs(Th) (Max) @ Id
3V @ 250μA
Package / Case
TO-236-3, SC-59, SOT-23-3
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Gate To Source Voltage (Vgs)
20V
Height
1.2mm
Number Of Terminations
3
Resistance
5Ohm
Width
3.05mm
Threshold Voltage
-1.7V
Nominal Vgs
-1.7 V
Length
2.92mm
Voltage - Rated DC
-60V
Fall Time (Typ)
6.3 ns
Power Dissipation-Max
360mW Ta
Manufacturer'S Part No.
NDS0605
Rds On (Max) @ Id, Vgs
5 Ω @ 500mA, 10V
Continuous Drain Current (ID)
180mA
Current Rating
-180mA
Gate Charge (Qg) (Max) @ Vgs
2.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
79pF @ 25V
Feedback Cap-Max (Crss)
5 pF
Current - Continuous Drain (Id) @ 25°C
180mA Ta
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.21.0095
ECCN Code
EAR99

Common questions

Product FAQ

Quick answers for buyers reviewing NDS0605, stock, documentation, and sourcing steps.

What is NDS0605?

NDS0605 is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for NDS0605?

NDS0605 is listed with package reference SOT-23. The current product description is MOSFET P-CH 60V 180MA SOT-23, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is NDS0605 available in stock?

This page currently shows 92416 units in stock and 32249 units available for NDS0605. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for NDS0605?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for NDS0605 by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for NDS0605?

Yes. This page links to the datasheet for NDS0605 by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify NDS0605 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for NDS0605 before approving the order.

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