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Request evaluation samplesFDB52N20TM Transistors - FETs, MOSFETs - Single by ON Semiconductor
FDB52N20TM is a Transistors - FETs, MOSFETs - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO-263-3 under the ON Semiconductor brand listing. MOSFET N-CH 200V 52A D2PAK. TrustCompo combines the available model, brand, hierarchy, and specification details around FDB52N20TM so buyers can move faster from review to quotation.
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Datasheet
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Documentation support
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Key specifications
Series
UniFET™
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 200V 52A D2PAK
key Attributes
-
Datasheet
View FDB52N20TM DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
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AS9120B
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ISO 14001
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ESD Control
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Product overview
Overview
The FDB52N20TM is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for applications requiring efficient power management and switching capabilities. Below is a detailed description of its key features and specifications:
Key Features:
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N-Channel Configuration: The FDB52N20TM is an N-channel MOSFET, which means it uses electrons as the charge carriers, providing high conductivity and efficiency.
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Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
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Current Rating: It can handle a continuous drain current (I_D) of up to 52A at a specified temperature, allowing it to manage significant power loads.
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R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.08 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation.
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Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 2V to 4V, which allows for easy drive with standard logic levels.
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Thermal Performance: The FDB52N20TM features a robust thermal performance with a maximum junction temperature (T_J) of 150°C. It is packaged in a TO-220 form factor, which aids in effective heat dissipation.
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Fast Switching Speed: The device is designed for fast switching applications, making it suitable for use in power supplies, motor drives, and other high-frequency applications.
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Package Type: The TO-220 package provides a sturdy and reliable physical structure, allowing for easy mounting on heatsinks and ensuring good thermal management.
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Applications: Common applications include DC-DC converters, power inverters, and other power management systems where high efficiency and reliability are critical.
Electrical Characteristics:
- Maximum Drain-Source Voltage (V_DS): 200V
- Continuous Drain Current (I_D): 52A
- Pulsed Drain Current (I_DM): 100A
- Gate-Source Voltage (V_GS): ±20V
- On-Resistance (R_DS(on)): 0.08Ω (typical at V_GS = 10V)
- Gate Threshold Voltage (V_GS(th)): 2V to 4V
Conclusion:
The FDB52N20TM from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a variety of high-power applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it an excellent choice for engineers looking to optimize power management in their designs.
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Popular Specs Surfaced First
Product Parameter
Turn-Off Delay Time
48 ns
Product Parameter
Rise Time
160ns
Product Parameter
Number Of Channels
1
Product Parameter
Number Of Elements
1
Product Parameter
Turn On Delay Time
53 ns
Product Attribute
Part Status
Active
Turn-Off Delay Time
48 ns
Rise Time
160ns
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
53 ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
6 Weeks
Published
2005
Packaging
Tape & Reel (TR)
Lifecycle Status
ACTIVE (Last Updated: 22 hours ago)
Terminal Form
GULL WING
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Manufacturer
ON Semiconductor
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Resistance
49mOhm
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds
2900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Weight
1.31247g
Vgs (Max)
±30V
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Number Of Terminations
2
Height
5.08mm
Voltage - Rated DC
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs(Th) (Max) @ Id
5V @ 250μA
Gate To Source Voltage (Vgs)
30V
Drain To Source Breakdown Voltage
200V
Nominal Vgs
5 V
Threshold Voltage
5V
Width
10.16mm
Series
UniFET™
Manufacturer'S Part No.
FDB52N20TM
Current Rating
52A
Pulsed Drain Current-Max (IDM)
208A
Continuous Drain Current (ID)
52A
Current - Continuous Drain (Id) @ 25°C
52A Tc
Fall Time (Typ)
150 ns
Rds On (Max) @ Id, Vgs
49m Ω @ 26A, 10V
Avalanche Energy Rating (Eas)
2520 mJ
Power Dissipation
357W
Power Dissipation-Max
357W Tc
Length
9.98mm
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Common questions
Product FAQ
Quick answers for buyers reviewing FDB52N20TM, stock, documentation, and sourcing steps.
What is FDB52N20TM?
FDB52N20TM is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for FDB52N20TM?
FDB52N20TM is listed with package reference TO-263-3. The current product description is MOSFET N-CH 200V 52A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is FDB52N20TM available in stock?
This page currently shows 32259 units in stock and 96053 units available for FDB52N20TM. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for FDB52N20TM?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDB52N20TM by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for FDB52N20TM?
Yes. This page links to the datasheet for FDB52N20TM by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify FDB52N20TM before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDB52N20TM before approving the order.
Transistors - FETs, MOSFETs - Single
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