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Request evaluation samplesFDN352AP Transistors - FETs, MOSFETs - Single by ON Semiconductor
FDN352AP is a Transistors - FETs, MOSFETs - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SSOT-3 under the ON Semiconductor brand listing. MOSFET P-CH 30V 1.3A SSOT-3. TrustCompo combines the available model, brand, hierarchy, and specification details around FDN352AP so buyers can move faster from review to quotation.
RoHS
Datasheet
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Documentation support
Pre-shipment inspection review
Key specifications
Series
PowerTrench®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET P-CH 30V 1.3A SSOT-3
key Attributes
-
Datasheet
View FDN352AP DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
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ESD Control
Electrostatic handling standards to help protect sensitive components.
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Product overview
Overview
The FDN352AP is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for low-voltage applications and is particularly suitable for use in power management, switching, and amplification circuits.
Key Features:
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Package Type: The FDN352AP is typically housed in a compact SOT-23 package, which allows for efficient use of board space and is suitable for surface-mount technology (SMT) applications.
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Voltage Ratings: The device has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to moderate voltage applications.
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Current Ratings: It can handle continuous drain currents (I_D) of up to 3.5A, which provides flexibility in various circuit designs.
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R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.045 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power loss and improved efficiency in switching applications.
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Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 1V to 2.5V, allowing for easy interfacing with low-voltage control signals.
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Thermal Characteristics: The FDN352AP has good thermal performance, with a maximum junction temperature (T_J) rating of 150°C, which allows it to operate reliably in various thermal environments.
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Applications: This MOSFET is commonly used in applications such as load switching, power management circuits, and as a switch in various electronic devices. Its low gate drive requirements make it ideal for battery-powered applications.
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Performance: The FDN352AP exhibits fast switching speeds, which is beneficial for high-frequency applications. Its low capacitance values contribute to reduced switching losses.
Electrical Characteristics:
- V_DS (Max): 30V
- I_D (Max): 3.5A
- R_DS(on): 0.045Ω at V_GS = 10V
- V_GS(th): 1V to 2.5V
- T_J (Max): 150°C
Conclusion:
The FDN352AP from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that is well-suited for a variety of low-voltage applications. Its compact size, low on-resistance, and good thermal characteristics make it an excellent choice for designers looking to optimize performance in power management and switching circuits.
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Popular Specs Surfaced First
Product Attribute
Part Status
Active
Product Attribute
REACH Status
REACH Unaffected
Product Attribute
ECCN
EAR99
Product Attribute
Lead Free
Lead Free
Product Attribute
Mounting Type
Surface Mount
Product Attribute
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Published
2005
Packaging
Tape & Reel (TR)
Factory Lead Time
10 Weeks
Termination
SMD/SMT
Terminal Position
DUAL
Terminal Form
GULL WING
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Manufacturer
ON Semiconductor
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Subcategory
Other Transistors
Package / Case
TO-236-3, SC-59, SOT-23-3
Resistance
180mOhm
Input Capacitance (Ciss) (Max) @ Vds
150pF @ 15V
Vgs(Th) (Max) @ Id
2.5V @ 250μA
Series
PowerTrench®
Power Dissipation-Max
500mW Ta
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Number Of Terminations
3
Power Dissipation
500mW
Width
1.4mm
Voltage - Rated DC
-30V
Drain To Source Breakdown Voltage
-30V
Height
1.22mm
Gate To Source Voltage (Vgs)
25V
Vgs (Max)
±25V
Voltage
30V
Length
2.92mm
Threshold Voltage
-2V
Fall Time (Typ)
15 ns
Manufacturer'S Part No.
FDN352AP
Continuous Drain Current (ID)
-1.3A
Current - Continuous Drain (Id) @ 25°C
1.3A Ta
Nominal Vgs
-2 V
Gate Charge (Qg) (Max) @ Vgs
1.9nC @ 4.5V
Rds On (Max) @ Id, Vgs
180m Ω @ 1.3A, 10V
Current Rating
-1.3A
Current
13A
Turn-Off Delay Time
10 ns
Number Of Channels
1
Number Of Elements
1
Dual Supply Voltage
-30V
Turn On Delay Time
4 ns
Rise Time
15ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.21.0095
ECCN Code
EAR99
Common questions
Product FAQ
Quick answers for buyers reviewing FDN352AP, stock, documentation, and sourcing steps.
What is FDN352AP?
FDN352AP is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for FDN352AP?
FDN352AP is listed with package reference SSOT-3. The current product description is MOSFET P-CH 30V 1.3A SSOT-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is FDN352AP available in stock?
This page currently shows 138595 units in stock and 20799 units available for FDN352AP. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for FDN352AP?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDN352AP by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for FDN352AP?
Yes. This page links to the datasheet for FDN352AP by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify FDN352AP before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDN352AP before approving the order.
Transistors - FETs, MOSFETs - Single
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