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STD1NK60T4 Transistors - FETs, MOSFETs - Single by STMicroelectronics

STD1NK60T4 is a Transistors - FETs, MOSFETs - Single model from STMicroelectronics, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO-252- under the STMicroelectronics brand listing. MOSFET N-CH 600V 1A DPAK. TrustCompo combines the available model, brand, hierarchy, and specification details around STD1NK60T4 so buyers can move faster from review to quotation.

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Datasheet
STD1NK60T4 Transistors - FETs, MOSFETs - Single by STMicroelectronics | TrustCompo
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Part Number

STD1NK60T4

Internal code

TCE000033217

Package

TO-252-

Key specifications

Series

SuperMESH™

Min Quantity

1

Description

MOSFET N-CH 600V 1A DPAK

key Attributes

-

Technical document

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Globally recognized certifications

4 certifications

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ISO 9001

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AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

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ESD Control

Electrostatic handling standards to help protect sensitive components.

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Product overview

Overview

The STD1NK60T4 is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for various applications, including power management, switching, and amplification in electronic circuits. Here’s a detailed description of its key features and specifications:

Key Features:

  1. Voltage Rating: The STD1NK60T4 has a maximum drain-source voltage (V_DS) of 600 volts, making it suitable for high-voltage applications.

  2. Current Rating: It can handle a continuous drain current (I_D) of up to 1 ampere, which allows it to be used in moderate power applications.

  3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 1.6 ohms at a gate-source voltage (V_GS) of 10 volts. This low on-resistance contributes to reduced power losses during operation.

  4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 2 to 4 volts, which indicates the voltage required to turn the MOSFET on. This feature allows for compatibility with various control voltages.

  5. Package Type: The STD1NK60T4 is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in power applications.

  6. Fast Switching: The device is designed for fast switching applications, making it ideal for use in switching power supplies and other high-frequency applications.

  7. Thermal Characteristics: The TO-220 package allows for efficient heat dissipation, with a thermal resistance junction-to-case (R_θJC) that enables the device to operate effectively under load.

  8. Applications: Common applications include power supplies, motor control, lighting control, and other electronic circuits requiring efficient switching.

Electrical Characteristics:

  • Maximum Drain-Source Voltage (V_DS): 600V
  • Continuous Drain Current (I_D): 1A
  • Pulsed Drain Current (I_D, pulsed): 2A
  • Gate-Source Voltage (V_GS): ±20V
  • Total Gate Charge (Q_g): Typically around 20 nC, which indicates the charge required to switch the MOSFET on and off.

Conclusion:

The STD1NK60T4 from STMicroelectronics is a robust and versatile N-channel MOSFET suitable for a wide range of high-voltage applications. Its combination of high voltage rating, low on-resistance, and fast switching capabilities makes it an excellent choice for engineers looking to design efficient and reliable electronic circuits.

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Popular Specs Surfaced First

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Manufacturer
STMicroelectronics
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Height
2.63mm
Vgs (Max)
±30V
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Pin Count
3
Current Rating
1A
Voltage - Rated DC
600V
Width
6.2mm
Drive Voltage (Max Rds On,Min Rds On)
10V
Threshold Voltage
3V
Fall Time (Typ)
25 ns
Gate To Source Voltage (Vgs)
30V
Length
6.6mm
Drain To Source Breakdown Voltage
600V
Drain Current-Max (Abs) (ID)
1A
Series
SuperMESH™
Base Part Number
STD1NK
Manufacturer Package Identifier
TO-252-P032P
Continuous Drain Current (ID)
1A
Current - Continuous Drain (Id) @ 25°C
1A Tc
Power Dissipation
30W
Manufacturer'S Part No.
STD1NK60T4
Vgs(Th) (Max) @ Id
3.7V @ 250μA
Rds On (Max) @ Id, Vgs
8.5 Ω @ 500mA, 10V
Avalanche Energy Rating (Eas)
25 mJ
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Pulsed Drain Current-Max (IDM)
4A
Input Capacitance (Ciss) (Max) @ Vds
156pF @ 25V
Resistance
8.5Ohm
Power Dissipation-Max
30W Tc
Terminal Finish
Matte Tin (Sn) - annealed
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
6.5 ns
Turn-Off Delay Time
19 ns
Rise Time
5ns

Common questions

Product FAQ

Quick answers for buyers reviewing STD1NK60T4, stock, documentation, and sourcing steps.

What is STD1NK60T4?

STD1NK60T4 is a Transistors - FETs, MOSFETs - Single component from STMicroelectronics. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for STD1NK60T4?

STD1NK60T4 is listed with package reference TO-252-. The current product description is MOSFET N-CH 600V 1A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is STD1NK60T4 available in stock?

This page currently shows 87459 units in stock and 18847 units available for STD1NK60T4. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for STD1NK60T4?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for STD1NK60T4 by STMicroelectronics. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for STD1NK60T4?

Yes. This page links to the datasheet for STD1NK60T4 by STMicroelectronics, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify STD1NK60T4 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for STD1NK60T4 before approving the order.

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