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Request evaluation samplesIRLR3915TRPBF Transistors - FETs, MOSFETs - Single by Infineon Technologies
IRLR3915TRPBF is a Transistors - FETs, MOSFETs - Single model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO-252-3 under the Infineon Technologies brand listing. MOSFET N-CH 55V 30A DPAK. TrustCompo combines the available model, brand, hierarchy, and specification details around IRLR3915TRPBF so buyers can move faster from review to quotation.
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Datasheet
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Key specifications
Series
HEXFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 55V 30A DPAK
key Attributes
-
Datasheet
View IRLR3915TRPBF DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
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AS9120B
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ISO 14001
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ESD Control
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Product overview
Overview
The IRLR3915TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for high-efficiency power management applications, making it suitable for a variety of uses in both consumer and industrial electronics.
Key Features:
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N-Channel Configuration: The IRLR3915TRPBF is an N-channel MOSFET, which means it uses electrons as the charge carriers. This configuration typically offers lower on-resistance and higher efficiency compared to P-channel MOSFETs.
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Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of 30V, making it suitable for low to medium voltage applications.
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Current Rating: It can handle a continuous drain current (I_D) of up to 62A at a specified temperature, which allows it to manage significant power loads effectively.
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On-Resistance: The on-resistance (R_DS(on)) is low, typically around 0.008 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing overall efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 2.5V, which allows for easy driving with standard logic levels.
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Package Type: The IRLR3915TRPBF is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
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Thermal Characteristics: The device has a thermal resistance from junction to case (RθJC) that allows for effective heat management, ensuring reliable operation under load.
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Applications: This MOSFET is commonly used in applications such as DC-DC converters, motor drives, power management systems, and other switching applications where efficiency and thermal performance are critical.
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RoHS Compliance: The IRLR3915TRPBF is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it suitable for environmentally friendly designs.
Performance Characteristics:
- Switching Speed: The IRLR3915TRPBF features fast switching capabilities, which is essential for applications requiring rapid on/off control.
- Safe Operating Area (SOA): The device is designed to operate within a specified safe operating area, ensuring reliability and longevity in various conditions.
Conclusion:
The IRLR3915TRPBF from Infineon Technologies is a robust and efficient N-channel MOSFET that is well-suited for a wide range of power management applications. Its combination of high current handling, low on-resistance, and good thermal performance makes it a popular choice among engineers looking to optimize their designs for efficiency and reliability.
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Popular Specs Surfaced First
Product Parameter
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Product Parameter
Number Of Elements
1
Product Parameter
Turn-Off Delay Time
26 ns
Product Parameter
Dual Supply Voltage
55V
Product Parameter
Turn On Delay Time
7.4 ns
Product Parameter
Rise Time
51ns
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Turn-Off Delay Time
26 ns
Dual Supply Voltage
55V
Turn On Delay Time
7.4 ns
Rise Time
51ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Published
2003
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs (Max)
±16V
Voltage - Rated DC
55V
Avalanche Energy Rating (Eas)
200 mJ
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Pulsed Drain Current-Max (IDM)
240A
Nominal Vgs
3 V
Vgs(Th) (Max) @ Id
3V @ 250μA
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Threshold Voltage
3V
Length
6.7056mm
Continuous Drain Current (ID)
30A
Drain To Source Breakdown Voltage
55V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Power Dissipation-Max
120W Tc
Gate To Source Voltage (Vgs)
16V
Power Dissipation
120W
Fall Time (Typ)
100 ns
Manufacturer'S Part No.
IRLR3915TRPBF
Rds On (Max) @ Id, Vgs
14m Ω @ 30A, 10V
Current Rating
61A
Gate Charge (Qg) (Max) @ Vgs
92nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1870pF @ 25V
Resistance
14mOhm
Height
2.26mm
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Common questions
Product FAQ
Quick answers for buyers reviewing IRLR3915TRPBF, stock, documentation, and sourcing steps.
What is IRLR3915TRPBF?
IRLR3915TRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for IRLR3915TRPBF?
IRLR3915TRPBF is listed with package reference TO-252-3. The current product description is MOSFET N-CH 55V 30A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is IRLR3915TRPBF available in stock?
This page currently shows 101814 units in stock and 82890 units available for IRLR3915TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for IRLR3915TRPBF?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRLR3915TRPBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for IRLR3915TRPBF?
Yes. This page links to the datasheet for IRLR3915TRPBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify IRLR3915TRPBF before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IRLR3915TRPBF before approving the order.
Transistors - FETs, MOSFETs - Single
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