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Request evaluation samplesIRLR3705ZTRPBF Transistors - FETs, MOSFETs - Single by Infineon Technologies
IRLR3705ZTRPBF is a Transistors - FETs, MOSFETs - Single model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO-252-3 under the Infineon Technologies brand listing. MOSFET N-CH 55V 42A DPAK. TrustCompo combines the available model, brand, hierarchy, and specification details around IRLR3705ZTRPBF so buyers can move faster from review to quotation.
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Datasheet
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Key specifications
Series
HEXFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 55V 42A DPAK
key Attributes
-
Datasheet
View IRLR3705ZTRPBF DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
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AS9120B
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ISO 14001
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ESD Control
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Product overview
Overview
The IRLR3705ZTRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for high-efficiency power management applications, making it suitable for a variety of uses in both consumer and industrial electronics.
Key Features:
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N-Channel Configuration: The IRLR3705ZTRPBF is an N-channel MOSFET, which means it uses electrons as the charge carriers. This configuration typically offers lower on-resistance and higher efficiency compared to P-channel MOSFETs.
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Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of 30V, making it suitable for low to medium voltage applications.
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Current Rating: It can handle a continuous drain current (I_D) of up to 62A at a specified temperature, which allows it to manage significant power loads effectively.
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On-Resistance: The on-resistance (R_DS(on)) is typically around 0.0045 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved thermal performance during operation.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 2.5V, which allows for easy driving with standard logic levels.
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Package Type: The IRLR3705ZTRPBF is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
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Fast Switching Speed: This MOSFET is designed for fast switching applications, making it ideal for use in power supplies, motor drivers, and other applications where rapid on/off switching is required.
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Thermal Characteristics: The device has a thermal resistance junction-to-case (RθJC) that allows for efficient heat dissipation, which is critical in high-power applications to prevent overheating.
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RoHS Compliance: The IRLR3705ZTRPBF is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring that it is free from certain hazardous materials, making it environmentally friendly.
Applications:
- Power Management: Used in DC-DC converters, power supplies, and battery management systems.
- Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
- Switching Regulators: Ideal for use in switching power supplies where efficiency is critical.
- LED Drivers: Can be used in LED lighting applications for efficient power control.
Conclusion:
The IRLR3705ZTRPBF from Infineon Technologies is a versatile and efficient N-channel MOSFET that is well-suited for a wide range of applications requiring reliable power management and switching capabilities. Its combination of high current handling, low on-resistance, and fast switching speed makes it a popular choice among engineers and designers in the electronics industry.
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Popular Specs Surfaced First
Export Classifications & Environmental
JESD-609 Code
e3
Export Classifications & Environmental
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Export Classifications & Environmental
RoHS Status
ROHS3 Compliant
Export Classifications & Environmental
REACH SVHC
No SVHC
Export Classifications & Environmental
JESD-30 Code
R-PSSO-G2
Export Classifications & Environmental
HTSUS
8541.29.0095
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Published
2006
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Lead Free
Contains Lead, Lead Free
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Voltage - Rated DC
55V
Additional Feature
HIGH RELIABILITY
Resistance
8MOhm
Input Capacitance (Ciss) (Max) @ Vds
2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
42A Tc
Nominal Vgs
3 V
Vgs(Th) (Max) @ Id
3V @ 250μA
Reflow Temperature-Max (S)
30
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Threshold Voltage
3V
Current Rating
42A
Length
6.7056mm
Recovery Time
42 ns
Drain To Source Breakdown Voltage
55V
Gate To Source Voltage (Vgs)
16V
Fall Time (Typ)
70 ns
Height
2.2606mm
Manufacturer'S Part No.
IRLR3705ZTRPBF
Power Dissipation
130W
Continuous Drain Current (ID)
89A
Rds On (Max) @ Id, Vgs
8m Ω @ 42A, 10V
Gate Charge (Qg) (Max) @ Vgs
66nC @ 5V
Power Dissipation-Max
130W Tc
Number Of Elements
1
Dual Supply Voltage
55V
Turn On Delay Time
17 ns
Turn-Off Delay Time
33 ns
Rise Time
150ns
Common questions
Product FAQ
Quick answers for buyers reviewing IRLR3705ZTRPBF, stock, documentation, and sourcing steps.
What is IRLR3705ZTRPBF?
IRLR3705ZTRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for IRLR3705ZTRPBF?
IRLR3705ZTRPBF is listed with package reference TO-252-3. The current product description is MOSFET N-CH 55V 42A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is IRLR3705ZTRPBF available in stock?
This page currently shows 126009 units in stock and 28238 units available for IRLR3705ZTRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for IRLR3705ZTRPBF?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRLR3705ZTRPBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for IRLR3705ZTRPBF?
Yes. This page links to the datasheet for IRLR3705ZTRPBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify IRLR3705ZTRPBF before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IRLR3705ZTRPBF before approving the order.
Transistors - FETs, MOSFETs - Single
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