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Request evaluation samplesFDMS86263P Transistors - FETs, MOSFETs - Single by ON Semiconductor
FDMS86263P is a Transistors - FETs, MOSFETs - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. MOSFET P-CH 150V 22A POWER 56. TrustCompo combines the available model, brand, hierarchy, and specification details around FDMS86263P so buyers can move faster from review to quotation.
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Key specifications
Series
PowerTrench®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET P-CH 150V 22A POWER 56
key Attributes
-
Datasheet
View FDMS86263P DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
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AS9120B
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ISO 14001
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ESD Control
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Product overview
Overview
The FDMS86263P is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency power management applications, particularly in DC-DC converters, power supplies, and other switching applications.
Key Features:
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Configuration: The FDMS86263P features a dual configuration, meaning it contains two N-channel MOSFETs in a single package. This allows for compact designs and efficient use of board space.
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Package Type: It is typically housed in a compact SO-8 (Small Outline 8-lead) package, which is surface-mountable. This package type is favored for its low profile and ease of integration into various circuit designs.
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Voltage Ratings: The device has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
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Current Ratings: The FDMS86263P can handle continuous drain currents of up to 10A, depending on the thermal conditions and PCB layout. This capability makes it suitable for applications requiring significant power handling.
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R_DS(on): One of the critical specifications of the FDMS86263P is its low on-resistance (R_DS(on)), which is typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced conduction losses and improved efficiency in power applications.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 2.5V, allowing for easy drive from standard logic levels.
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Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a maximum junction temperature (T_J) rating of 150°C. This allows for reliable operation in demanding environments.
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Applications: The FDMS86263P is suitable for a variety of applications, including:
- Synchronous rectification in power supplies
- DC-DC converters
- Motor control circuits
- Load switching applications
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Reliability: ON Semiconductor provides a robust reliability profile for the FDMS86263P, ensuring it meets industry standards for performance and longevity.
Summary:
The FDMS86263P from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that is ideal for a range of power management applications. Its low on-resistance, high current handling capability, and compact package make it a popular choice among engineers looking to optimize their designs for performance and space efficiency.
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Popular Specs Surfaced First
Product Attribute
Part Status
Active
Product Attribute
REACH Status
REACH Unaffected
Product Attribute
ECCN
EAR99
Product Attribute
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Product Attribute
Mounting Type
Surface Mount
Product Attribute
Factory Lead Time
16 Weeks
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Factory Lead Time
16 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Reach Compliance Code
not_compliant
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Manufacturer
ON Semiconductor
Height
1.1mm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Published
2017
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Package / Case
8-PowerTDFN
Series
PowerTrench®
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Contact Plating
Tin
Mount
Surface Mount
Pbfree Code
yes
Length
5mm
Number Of Terminations
5
Number Of Pins
8
Terminal Form
FLAT
Power Dissipation-Max
2.5W Ta 104W Tc
Peak Reflow Temperature (Cel)
NOT SPECIFIED
JEDEC-95 Code
MO-240AA
Reflow Temperature-Max (S)
NOT SPECIFIED
Weight
68.1mg
Drain To Source Breakdown Voltage
-150V
Gate To Source Voltage (Vgs)
25V
Vgs (Max)
±25V
Manufacturer'S Part No.
FDMS86263P
Current - Continuous Drain (Id) @ 25°C
4.4A Ta 22A Tc
Rds On (Max) @ Id, Vgs
53m Ω @ 4.4A, 10V
Fall Time (Typ)
14 ns
Continuous Drain Current (ID)
-4.4A
Drain-Source On Resistance-Max
0.053Ohm
Input Capacitance (Ciss) (Max) @ Vds
3905pF @ 75V
Threshold Voltage
-2.9V
Drain Current-Max (Abs) (ID)
22A
Power Dissipation
104W
Pulsed Drain Current-Max (IDM)
70A
Width
5.85mm
Number Of Channels
1
Number Of Elements
1
Drain To Source Voltage (Vdss)
150V
Turn-Off Delay Time
37 ns
Rise Time
10ns
Turn On Delay Time
17 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-F5
Common questions
Product FAQ
Quick answers for buyers reviewing FDMS86263P, stock, documentation, and sourcing steps.
What is FDMS86263P?
FDMS86263P is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for FDMS86263P?
FDMS86263P is listed with package reference -. The current product description is MOSFET P-CH 150V 22A POWER 56, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is FDMS86263P available in stock?
This page currently shows 114024 units in stock and 22882 units available for FDMS86263P. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for FDMS86263P?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDMS86263P by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for FDMS86263P?
Yes. This page links to the datasheet for FDMS86263P by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify FDMS86263P before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDMS86263P before approving the order.
Transistors - FETs, MOSFETs - Single
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