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GANE1R8-100QBA GaN FETs by Nexperia

GANE1R8-100QBA is a GaN FETs from Nexperia in SOT8091-1 packaging. It is commonly reviewed for GaN FETs. This page lists current TrustCompo stock, tier pricing, package data, datasheet access, compliance attributes, Hong Kong warehouse shipping options, payment confirmation, and RFQ options for buyers verifying this exact ordering code.

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GANE1R8-100QBA GaN FETs by Nexperia | TrustCompo
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Key specifications

Part Number

GANE1R8-100QBA

Internal code

TCE000023339

Package

SOT8091-1

Manufacturer
Nexperia

Key specifications

Series

-

Min Quantity

1

Category
MOSFETs
Sub Category
GaN FETs
Description

-

key Attributes

-

Trust signals

Quality and trust signals

Review TrustCompo quality credentials, traceability support, anti-counterfeit handling, and inspection controls before sending an RFQ.

4 certifications
  • ISO 9001

    Quality management processes for more consistent sourcing and handling.

  • AS9120B

    Aerospace-focused distribution controls for traceability and reliability.

  • ISO 14001

    Environmental management discipline across warehouse and operating workflows.

  • ESD Control

    Electrostatic handling standards to help protect sensitive components.

RFQ checklist

Order process

Confirm the core buying details for GANE1R8-100QBA before RFQ, PO release, and shipment planning.

  1. 1

    Confirm MPN

    Use the exact part number, manufacturer, package, and approval constraints in the RFQ.

  2. 2

    Check stock and price

    Verify live availability, MOQ, lead time, final unit price, and tax terms before PO release.

  3. 3

    Align documents

    Confirm datasheet, CoC, traceability, lifecycle notes, and inspection scope when required.

  4. 4

    Arrange shipment

    Release the PO and align DHL, FedEx, UPS, or buyer forwarder shipment from Hong Kong.

Before PO release

Part confirmation

  • Exact MPN confirmed: GANE1R8-100QBA
  • Package to verify: SOT8091-1

Commercial confirmation

  • Live stock and lead time confirmed by RFQ
  • Final price and tax terms confirmed before PO release

Fulfillment & documents

  • Ship-from location: Hong Kong warehouse
  • Shipping method: DHL, FedEx, UPS, or buyer forwarder account

Technical parameters

Parameters

Compare grouped GANE1R8-100QBA parameters from Nexperia, including package, series, key attributes, and technical values used for engineering and sourcing review.

  • Product Attribute

    RDSon (Typ) @ VGS = 5 V (MΩ)

    1.4

  • Product Attribute

    Product Status

    Production

  • Product Attribute

    Manufacturer

    Nexperia

  • Product Attribute

    Number Of Transistors

    1.0

  • Product Attribute

    ID [Max] (A)

    100.0

  • Product Attribute

    VDS [Max] (V)

    100.0

GANE1R8-100QBA Product Attribute
ParameterValue
RDSon (Typ) @ VGS = 5 V (MΩ)

Typical drain-source on-resistance when the gate-source voltage is 5 V. Lower values mean less conduction loss. Compare this parameter across MOSFETs for your switching or load application, and always verify against the datasheet's test conditions.

1.4
Product Status

Lifecycle status of the product, such as active, obsolete, or end-of-life. This affects long-term availability and design reliability. For production, choose active products to ensure supply continuity. Check the datasheet or manufacturer for lifecycle details.

Production
Manufacturer

Identifies the company that designed and produced the component. Buyers often filter by manufacturer to ensure brand reliability, quality standards, and supply chain consistency. Verify the manufacturer against the datasheet and official packaging to avoid counterfeit parts.

Nexperia
Number Of Transistors

Specifies the total count of individual transistor die or chips integrated within a single component package. This is critical for multi-transistor arrays, Darlington pairs, or modules. Verify against the datasheet to ensure the package meets your circuit design requirements for channel count and configuration.

1.0
ID [Max] (A)

Maximum continuous drain current for a MOSFET or transistor. This is the highest current the device can handle continuously without exceeding thermal limits. Verify against the datasheet for your operating conditions, including heatsinking and ambient temperature.

100.0
VDS [Max] (V)

Maximum drain-source voltage rating for MOSFETs. This is the highest voltage that can be applied between drain and source without causing breakdown. Check the datasheet for absolute maximum ratings and ensure your circuit operates well below this limit for reliability.

100.0
Gate-Drain Charge (Typ)

Typical gate-drain charge (Qgd) in nanocoulombs, indicating the charge required to switch the MOSFET's drain during turn-off. Lower values enable faster switching and reduced losses. Verify against datasheet for your operating conditions.

4.5
VGSth [Typ] (V)

Typical gate-source threshold voltage at which the MOSFET begins to conduct. Check this value to ensure proper gate drive voltage levels in your switching application. Compare with min and max values from datasheet.

1.1
Maximum Junction Temperature (Tj)

Maximum junction temperature is the highest allowable operating temperature of the semiconductor die. Exceeding it can cause thermal damage or reduced reliability. Compare this limit with your application's worst-case thermal conditions and verify against the datasheet's thermal specifications.

150.0
IDM [Max] (A)

Maximum pulsed drain current for MOSFETs. This value indicates the highest current the device can handle during a short pulse. Compare with continuous drain current and verify against the datasheet for pulse width and duty cycle limitations.

320.0
Ciss [Typ] (PF)

Typical input capacitance of a MOSFET, measured in picofarads. It affects gate drive requirements and switching speed. Compare this value with the datasheet to ensure your driver can handle the charge and to optimize switching performance.

2500.0
RDSon [Max] @ VGS = 5 V (MΩ)

Maximum drain-source on-resistance when the gate-source voltage is 5 V. Lower values reduce conduction losses. Compare this parameter across MOSFETs for your switching or linear application, and verify it against the datasheet's test conditions.

1.8
Output Capacitance (Typ)

Typical output capacitance (Coss) of a power semiconductor, measured between drain and source. It affects switching losses and high-frequency behavior. Compare values when designing snubbers or resonant converters. Always verify against the datasheet for your operating conditions.

1100.0
Total Power Dissipation (Max)

Maximum total power the component can dissipate without damage. Compare across parts to ensure adequate thermal margin for your application. Verify against datasheet conditions, as derating may apply at high temperatures.

65.0
Thermal Resistance Junction-To-Mounting Base (Max)

Maximum thermal resistance from the semiconductor junction to the mounting base. This value determines how effectively heat is transferred to a heatsink or PCB. Lower values indicate better thermal performance. Use this parameter to calculate junction temperature and ensure reliable operation under load.

1.92
Release Date

Indicates when the component was first introduced to the market. Useful for assessing product maturity, lifecycle stage, and availability. Check the datasheet for the exact release date and compare with similar parts to ensure long-term supply.

2024-09-17
Package Name

Identifies the physical package type or designator, such as SOIC, QFN, or DIP. This determines PCB footprint, thermal performance, and assembly compatibility. Verify the package matches your board layout and manufacturing capabilities. Check the datasheet for exact dimensions.

VQFN7

Notice documents

PCN / product notice documents

0 documents

No public PCN / PDN records currently displayed

No public product notice document is currently displayed for GANE1R8-100QBA. Confirm PCN, PDN, EOL, date code, and lifecycle status during RFQ before production purchase.

Common questions

Product FAQ

Targeted answers for buyers verifying the exact GANE1R8-100QBA ordering code, packaging, stock, datasheet, and replacement path.

What does GANE1R8-100QBA mean?

GANE1R8-100QBA is the exact ordering code listed for a GaN FETs component from Nexperia. The current package reference is SOT8091-1, with listed context including -. Buyers should use the full code when requesting stock, price, datasheet, or compliance confirmation.

How should buyers verify the GANE1R8-100QBA ordering code?

Treat GANE1R8-100QBA as the full ordering code during RFQ and engineering review. Confirm the listed SOT8091-1 package, manufacturer documentation from Nexperia, datasheet ordering table, reel or packing details, and any customer approval constraints before substitution or PO release.

What package is GANE1R8-100QBA supplied in?

GANE1R8-100QBA is currently listed with package reference SOT8091-1 from Nexperia. Buyers should confirm the manufacturer package drawing, footprint, pinout, tape-and-reel details, and receiving requirements before approval.

Is GANE1R8-100QBA currently available?

GANE1R8-100QBA is currently marked with stock availability on this page. Before ordering, confirm the package (SOT8091-1), listed stock (131946), available quantity (65613), required quantity, lead time, final price, compliance needs, and exact ordering code match through RFQ.

Where can I compare GANE1R8-100QBA alternatives?

A mapped alternative list is not currently published for GANE1R8-100QBA. Send an RFQ with the target quantity, package constraints, and approval requirements so TrustCompo can help review credible replacement options.