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GAN190-650FBE GaN FETs by Nexperia

GAN190-650FBE is a GaN FETs from Nexperia in SOT8075-1 packaging. It is commonly reviewed for GaN FETs. This page lists current TrustCompo stock, tier pricing, package data, datasheet access, compliance attributes, Hong Kong warehouse shipping options, payment confirmation, and RFQ options for buyers verifying this exact ordering code.

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GAN190-650FBE GaN FETs by Nexperia | TrustCompo
Pictures are for reference only. Please contact us for the latest pictures.
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Key specifications

Part Number

GAN190-650FBE

Internal code

TCE000023334

Package

SOT8075-1

Manufacturer
Nexperia

Key specifications

Series

-

Min Quantity

1

Category
MOSFETs
Sub Category
GaN FETs
Description

-

key Attributes

-

Trust signals

Quality and trust signals

Review TrustCompo quality credentials, traceability support, anti-counterfeit handling, and inspection controls before sending an RFQ.

4 certifications
  • ISO 9001

    Quality management processes for more consistent sourcing and handling.

  • AS9120B

    Aerospace-focused distribution controls for traceability and reliability.

  • ISO 14001

    Environmental management discipline across warehouse and operating workflows.

  • ESD Control

    Electrostatic handling standards to help protect sensitive components.

RFQ checklist

Order process

Confirm the core buying details for GAN190-650FBE before RFQ, PO release, and shipment planning.

  1. 1

    Confirm MPN

    Use the exact part number, manufacturer, package, and approval constraints in the RFQ.

  2. 2

    Check stock and price

    Verify live availability, MOQ, lead time, final unit price, and tax terms before PO release.

  3. 3

    Align documents

    Confirm datasheet, CoC, traceability, lifecycle notes, and inspection scope when required.

  4. 4

    Arrange shipment

    Release the PO and align DHL, FedEx, UPS, or buyer forwarder shipment from Hong Kong.

Before PO release

Part confirmation

  • Exact MPN confirmed: GAN190-650FBE
  • Package to verify: SOT8075-1

Commercial confirmation

  • Live stock and lead time confirmed by RFQ
  • Final price and tax terms confirmed before PO release

Fulfillment & documents

  • Ship-from location: Hong Kong warehouse
  • Shipping method: DHL, FedEx, UPS, or buyer forwarder account

Technical parameters

Parameters

Compare grouped GAN190-650FBE parameters from Nexperia, including package, series, key attributes, and technical values used for engineering and sourcing review.

  • Product Parameter

    Channel Type

    N

  • Product Parameter

    Configuration

    e-mode

  • Product Attribute

    Product Status

    Production

  • Product Attribute

    Manufacturer

    Nexperia

  • Product Attribute

    Number Of Transistors

    1.0

  • Product Attribute

    ID [Max] (A)

    11.5

GAN190-650FBE Product Parameter
ParameterValue
Channel Type

Specifies the electrical channel configuration, such as unidirectional or bidirectional, for signal or power routing. This attribute is critical for selecting components like multiplexers, isolators, or level shifters. Verify the channel type against your application requirements and the datasheet to ensure correct signal flow and compatibility.

N
Configuration

Specifies the internal circuit topology or arrangement of the component, such as single, dual, or bridge configuration. This attribute helps engineers select the right part for their circuit design. Always verify the exact configuration against the datasheet to ensure compatibility with your application.

e-mode
GAN190-650FBE Product Attribute
ParameterValue
Product Status

Lifecycle status of the product, such as active, obsolete, or end-of-life. This affects long-term availability and design reliability. For production, choose active products to ensure supply continuity. Check the datasheet or manufacturer for lifecycle details.

Production
Manufacturer

Identifies the company that designed and produced the component. Buyers often filter by manufacturer to ensure brand reliability, quality standards, and supply chain consistency. Verify the manufacturer against the datasheet and official packaging to avoid counterfeit parts.

Nexperia
Number Of Transistors

Specifies the total count of individual transistor die or chips integrated within a single component package. This is critical for multi-transistor arrays, Darlington pairs, or modules. Verify against the datasheet to ensure the package meets your circuit design requirements for channel count and configuration.

1.0
ID [Max] (A)

Maximum continuous drain current for a MOSFET or transistor. This is the highest current the device can handle continuously without exceeding thermal limits. Verify against the datasheet for your operating conditions, including heatsinking and ambient temperature.

11.5
Total Power Dissipation (Max)

Maximum total power the component can dissipate without damage. Compare across parts to ensure adequate thermal margin for your application. Verify against datasheet conditions, as derating may apply at high temperatures.

125.0
VGSth [Typ] (V)

Typical gate-source threshold voltage at which the MOSFET begins to conduct. Check this value to ensure proper gate drive voltage levels in your switching application. Compare with min and max values from datasheet.

1.7
Output Capacitance (Typ)

Typical output capacitance (Coss) of a power semiconductor, measured between drain and source. It affects switching losses and high-frequency behavior. Compare values when designing snubbers or resonant converters. Always verify against the datasheet for your operating conditions.

30.0
Gate-Drain Charge (Typ)

Typical gate-drain charge (Qgd) in nanocoulombs, indicating the charge required to switch the MOSFET's drain during turn-off. Lower values enable faster switching and reduced losses. Verify against datasheet for your operating conditions.

1.1
Ciss [Typ] (PF)

Typical input capacitance of a MOSFET, measured in picofarads. It affects gate drive requirements and switching speed. Compare this value with the datasheet to ensure your driver can handle the charge and to optimize switching performance.

96.0
Maximum Junction Temperature (Tj)

Maximum junction temperature is the highest allowable operating temperature of the semiconductor die. Exceeding it can cause thermal damage or reduced reliability. Compare this limit with your application's worst-case thermal conditions and verify against the datasheet's thermal specifications.

150.0
Automotive Qualified

Indicates the component meets AEC-Q or other automotive reliability standards. Verify the specific qualification level in the datasheet. Essential for designs targeting automotive applications where extended temperature ranges and high vibration resistance are critical.

N
IDM [Max] (A)

Maximum pulsed drain current for MOSFETs. This value indicates the highest current the device can handle during a short pulse. Compare with continuous drain current and verify against the datasheet for pulse width and duty cycle limitations.

20.5
VDS [Max] (V)

Maximum drain-source voltage rating for MOSFETs. This is the highest voltage that can be applied between drain and source without causing breakdown. Check the datasheet for absolute maximum ratings and ensure your circuit operates well below this limit for reliability.

650.0
Release Date

Indicates when the component was first introduced to the market. Useful for assessing product maturity, lifecycle stage, and availability. Check the datasheet for the exact release date and compare with similar parts to ensure long-term supply.

2023-02-22
Package Name

Identifies the physical package type or designator, such as SOIC, QFN, or DIP. This determines PCB footprint, thermal performance, and assembly compatibility. Verify the package matches your board layout and manufacturing capabilities. Check the datasheet for exact dimensions.

DFN5060-5

Notice documents

PCN / product notice documents

0 documents

No public PCN / PDN records currently displayed

No public product notice document is currently displayed for GAN190-650FBE. Confirm PCN, PDN, EOL, date code, and lifecycle status during RFQ before production purchase.

Common questions

Product FAQ

Targeted answers for buyers verifying the exact GAN190-650FBE ordering code, packaging, stock, datasheet, and replacement path.

What does GAN190-650FBE mean?

GAN190-650FBE is the exact ordering code listed for a GaN FETs component from Nexperia. The current package reference is SOT8075-1, with listed context including -. Buyers should use the full code when requesting stock, price, datasheet, or compliance confirmation.

How should buyers verify the GAN190-650FBE ordering code?

Treat GAN190-650FBE as the full ordering code during RFQ and engineering review. Confirm the listed SOT8075-1 package, manufacturer documentation from Nexperia, datasheet ordering table, reel or packing details, and any customer approval constraints before substitution or PO release.

What package is GAN190-650FBE supplied in?

GAN190-650FBE is currently listed with package reference SOT8075-1 from Nexperia. Buyers should confirm the manufacturer package drawing, footprint, pinout, tape-and-reel details, and receiving requirements before approval.

Is GAN190-650FBE currently available?

GAN190-650FBE is currently marked with stock availability on this page. Before ordering, confirm the package (SOT8075-1), listed stock (192585), available quantity (38034), required quantity, lead time, final price, compliance needs, and exact ordering code match through RFQ.

Where can I compare GAN190-650FBE alternatives?

A mapped alternative list is not currently published for GAN190-650FBE. Send an RFQ with the target quantity, package constraints, and approval requirements so TrustCompo can help review credible replacement options.