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DMN3135LVT-7 Transistors - FETs, MOSFETs - Arrays by Diodes Incorporated

DMN3135LVT-7 is a Transistors - FETs, MOSFETs - Arrays model from Diodes Incorporated, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays product path. Known package information currently points to SOT-23-6 under the Diodes Incorporated brand listing. MOSFET 2N-CH 30V 3.5A TSOT26. TrustCompo combines the available model, brand, hierarchy, and specification details around DMN3135LVT-7 so buyers can move faster from review to quotation.

RoHS
Datasheet
DMN3135LVT-7 Transistors - FETs, MOSFETs - Arrays by Diodes Incorporated | TrustCompo
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Pre-shipment inspection review

Part Number

DMN3135LVT-7

Internal code

TCE000120348

Package

SOT-23-6

Key specifications

Series

-

Min Quantity

1

Description

MOSFET 2N-CH 30V 3.5A TSOT26

key Attributes

-

Technical document

Open The Official Datasheet

Review the latest datasheet for DMN3135LVT-7 from Diodes Incorporated in a separate tab so engineers and buyers can check package, electrical characteristics, and application details without leaving this product page.

View DMN3135LVT-7 Datasheet

Why request a quote

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RoHS, REACH, and lead-free documentation can be confirmed during RFQ
Traceability and Certificate of Conformance support available on request
Pre-shipment inspection report support for quality review

Trust signals

Globally recognized certifications

4 certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

Ordering workflow

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How to order this product

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1

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2

Send RFQ or sample request

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3

Align delivery, payment, and documentation

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Quality & Traceability Center

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Structured product content

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Product overview

Overview

MOSFET 2N-CH 30V 3.5A TSOT26

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Popular Specs Surfaced First

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

HTSUS

8541.21.0095

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.21.0095
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number Of Channels
2
Number Of Elements
1
Drain To Source Voltage (Vdss)
30V
Configuration
SINGLE WITH BUILT-IN DIODE
FET Feature
Logic Level Gate
Turn On Delay Time
2.6 ns
Rise Time
4.6ns
Turn-Off Delay Time
13.1 ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
15 Weeks
Packaging
Tape & Reel (TR)
Published
2012
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Package / Case
SOT-23-6 Thin, TSOT-23-6
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Manufacturer
Diodes Incorporated
Additional Feature
HIGH RELIABILITY
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Gate To Source Voltage (Vgs)
20V
Drain To Source Breakdown Voltage
30V
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Vgs(Th) (Max) @ Id
2.2V @ 250μA
Fall Time (Typ)
2.5 ns
FET Type
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs
4.1nC @ 4.5V
Continuous Drain Current (ID)
3.5A
Max Power Dissipation
840mW
Drain Current-Max (Abs) (ID)
3.3A
Input Capacitance (Ciss) (Max) @ Vds
305pF @ 15V
Rds On (Max) @ Id, Vgs
60m Ω @ 3.1A, 10V
Drain-Source On Resistance-Max
0.047Ohm
Manufacturer'S Part No.
DMN3135LVT-7

Common questions

Product FAQ

Quick answers for buyers reviewing DMN3135LVT-7, stock, documentation, and sourcing steps.

What is DMN3135LVT-7?

DMN3135LVT-7 is a Transistors - FETs, MOSFETs - Arrays component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for DMN3135LVT-7?

DMN3135LVT-7 is listed with package reference SOT-23-6. The current product description is MOSFET 2N-CH 30V 3.5A TSOT26, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is DMN3135LVT-7 available in stock?

This page currently shows 50183 units in stock and 46462 units available for DMN3135LVT-7. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for DMN3135LVT-7?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for DMN3135LVT-7 by Diodes Incorporated. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for DMN3135LVT-7?

Yes. This page links to the datasheet for DMN3135LVT-7 by Diodes Incorporated, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify DMN3135LVT-7 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for DMN3135LVT-7 before approving the order.

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