AT45DB081E-SSHN-B Memory by Adesto Technologies

Description
The AT45DB081E is a 1.65V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications.
The AT45DB081E also supports the RapidS serial interface for applications requiring very high speed operation. Its 8,650,752 bits of memory are organized as 4,096 pages of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB081E also contains two SRAM buffers of 256/264 bytes each.
The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a system's ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pad memory, and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.  
Features Single 1.7V - 3.6V supply Serial Peripheral Interface (SPI) compatible Supports SPI modes 0 and 3 Supports RapidS™ operation Continuous read capability through entire array Up to 85MHz Low-power read option up to 15MHz Clock-to-output time (tV) of 6ns maximum User configurable page size 256 bytes per page 264 bytes per page (default) Page size can be factory pre-configured for 256 bytes Two fully independent SRAM data buffers (256/264 bytes) Allows receiving data while reprogramming the main memory array Flexible programming options Byte/Page Program (1 to 256/264 bytes) directly into main memory Buffer Write Buffer to Main Memory Page Program Flexible erase options Page Erase (256/264 bytes) Block Erase (2KB) Sector Erase (64KB) Chip Erase (8-Mbits) Program and Erase Suspend/Resume Advanced hardware and software data protection features Individual sector protection Individual sector lockdown to make any sector permanently read-only 128-byte, One-Time Programmable (OTP) Security Register 64 bytes factory programmed with a unique identifier 64 bytes user programmable Hardware and software controlled reset options JEDEC Standard Manufacturer and Device ID Read Low-power dissipation 400nA Ultra-Deep Power-Down current (typical) 4.5µA Deep Power-Down current (typical) 25µA Standby current (typical) 11mA Active Read current (typical at 20MHz) Endurance: 100,000 program/erase cycles per page minimum Data retention: 20 years Complies with full industrial temperature range Green (Pb/Halide-free/RoHS compliant) packaging options 8-lead SOIC (0.150" wide and 0.208" wide) 8-pad Ultra-thin DFN (5 x 6 x 0.6mm) 8-ball (2 x4 Array) Wafer Level Chip Scale Package Die in Wafer Form