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DMN6070SSD-13 Transistors - FETs, MOSFETs - Arrays by Diodes Incorporated
DMN6070SSD-13 is a Transistors - FETs, MOSFETs - Arrays model from Diodes Incorporated, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays product path. Known package information currently points to SOIC under the Diodes Incorporated brand listing. MOSFET 2N-CH 60V 3.3A 8-SO. TrustCompo combines the available model, brand, hierarchy, and specification details around DMN6070SSD-13 so buyers can move faster from review to quotation.
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Key specifications
Series
-
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - ArraysDescription
MOSFET 2N-CH 60V 3.3A 8-SO
key Attributes
-
Datasheet
View DMN6070SSD-13 DatasheetTechnical document
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ISO 9001
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AS9120B
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ISO 14001
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ESD Control
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Product overview
Overview
The DMN6070SSD-13 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. This component is designed for high-efficiency switching applications and is particularly suitable for power management in various electronic devices.
Key Features:
- Type: N-channel MOSFET
- Package: The DMN6070SSD-13 is typically housed in a compact SO-8 (Small Outline) package, which allows for efficient space utilization on printed circuit boards (PCBs).
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for a wide range of applications, including power supplies and motor control.
- Current Rating: The device can handle a continuous drain current (I_D) of up to 70A, which is significant for high-power applications.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved thermal performance during operation.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 3V, allowing for easy drive with low-voltage control signals.
- Thermal Characteristics: The device is designed to operate efficiently at elevated temperatures, with a maximum junction temperature (T_J) of 150°C. This makes it suitable for applications where heat dissipation is a concern.
- Switching Speed: The DMN6070SSD-13 features fast switching capabilities, which are essential for applications requiring rapid on/off control, such as in DC-DC converters and PWM (Pulse Width Modulation) circuits.
Applications:
- Power Management: Ideal for use in power supplies, battery management systems, and energy-efficient circuits.
- Motor Control: Suitable for driving motors in various applications, including robotics and automotive systems.
- LED Drivers: Can be used in LED lighting applications where efficient switching is required.
- Consumer Electronics: Commonly found in devices such as laptops, smartphones, and other portable electronics.
Electrical Characteristics:
- Input Capacitance (C_iss): Typically around 2000 pF, which affects the speed of the device during switching.
- Output Capacitance (C_oss): Generally around 200 pF, influencing the overall performance in high-frequency applications.
- Reverse Recovery Time (t_rr): The device exhibits a low reverse recovery time, making it suitable for applications where fast switching is critical.
Conclusion:
The DMN6070SSD-13 from Diodes Incorporated is a robust and efficient N-channel MOSFET that offers high current handling, low on-resistance, and fast switching capabilities. Its versatile specifications make it an excellent choice for a variety of power management and control applications in both consumer and industrial electronics.
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Popular Specs Surfaced First
Product Parameter
Terminal Finish
Matte Tin (Sn)
Product Parameter
FET Technology
METAL-OXIDE SEMICONDUCTOR
Product Parameter
Drain To Source Voltage (Vdss)
60V
Product Parameter
Number Of Channels
2
Product Parameter
Number Of Elements
2
Product Parameter
Turn-Off Delay Time
35 ns
Terminal Finish
Matte Tin (Sn)
FET Technology
METAL-OXIDE SEMICONDUCTOR
Drain To Source Voltage (Vdss)
60V
Number Of Channels
2
Number Of Elements
2
Turn-Off Delay Time
35 ns
FET Feature
Logic Level Gate
Rise Time
4.1ns
Turn On Delay Time
3.5 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Published
2011
Factory Lead Time
23 Weeks
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Package / Case
8-SOIC (0.154, 3.90mm Width)
Operating Mode
ENHANCEMENT MODE
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Power Dissipation
1.5W
Operating Temperature
-55°C~150°C TJ
Manufacturer
Diodes Incorporated
Additional Feature
HIGH RELIABILITY
Vgs(Th) (Max) @ Id
3V @ 250μA
Reference Standard
AEC-Q101
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Height
1.5mm
Mount
Surface Mount
Number Of Pins
8
Number Of Terminations
8
Drain To Source Breakdown Voltage
60V
Gate To Source Voltage (Vgs)
20V
Max Power Dissipation
1.5W
Element Configuration
Dual
Length
4.95mm
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Fall Time (Typ)
11 ns
Width
3.95mm
FET Type
2 N-Channel (Dual)
Weight
73.992255mg
Continuous Drain Current (ID)
3.3A
Power - Max
1.2W
Gate Charge (Qg) (Max) @ Vgs
12.3nC @ 10V
Manufacturer'S Part No.
DMN6070SSD-13
Avalanche Energy Rating (Eas)
5.9 mJ
Input Capacitance (Ciss) (Max) @ Vds
588pF @ 30V
Rds On (Max) @ Id, Vgs
80m Ω @ 12A, 10V
Common questions
Product FAQ
Quick answers for buyers reviewing DMN6070SSD-13, stock, documentation, and sourcing steps.
What is DMN6070SSD-13?
DMN6070SSD-13 is a Transistors - FETs, MOSFETs - Arrays component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for DMN6070SSD-13?
DMN6070SSD-13 is listed with package reference SOIC. The current product description is MOSFET 2N-CH 60V 3.3A 8-SO, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is DMN6070SSD-13 available in stock?
This page currently shows 40306 units in stock and 34541 units available for DMN6070SSD-13. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for DMN6070SSD-13?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for DMN6070SSD-13 by Diodes Incorporated. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for DMN6070SSD-13?
Yes. This page links to the datasheet for DMN6070SSD-13 by Diodes Incorporated, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify DMN6070SSD-13 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for DMN6070SSD-13 before approving the order.
Transistors - FETs, MOSFETs - Arrays
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