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BSD223PH6327XTSA1 Transistors - FETs, MOSFETs - Arrays by Infineon Technologies

BSD223PH6327XTSA1 is a Transistors - FETs, MOSFETs - Arrays model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays product path. Known package information currently points to SOT363 under the Infineon Technologies brand listing. MOSFET 2P-CH 20V 0.39A SOT363. TrustCompo combines the available model, brand, hierarchy, and specification details around BSD223PH6327XTSA1 so buyers can move faster from review to quotation.

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Datasheet
BSD223PH6327XTSA1 Transistors - FETs, MOSFETs - Arrays by Infineon Technologies | TrustCompo
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Part Number

BSD223PH6327XTSA1

Internal code

TCE000105593

Package

SOT363

Key specifications

Series

OptiMOS™

Min Quantity

1

Description

MOSFET 2P-CH 20V 0.39A SOT363

key Attributes

-

Technical document

Open The Official Datasheet

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Globally recognized certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

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Product overview

Overview

The BSD223PH6327XTSA1 is a specific type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for high-efficiency power management applications, particularly in the automotive and industrial sectors.

Key Features:

  1. Type: N-channel MOSFET

    • The N-channel configuration allows for efficient switching and is commonly used in power applications.
  2. Voltage Rating:

    • The device typically has a high breakdown voltage, often around 30V, making it suitable for various applications that require robust performance under high voltage conditions.
  3. Current Rating:

    • The BSD223PH6327XTSA1 can handle significant continuous drain current, often in the range of several amperes, which is essential for applications that demand high power.
  4. RDS(on):

    • It features a low on-resistance (RDS(on)), which minimizes power loss during operation and enhances thermal performance. This characteristic is crucial for improving the overall efficiency of power circuits.
  5. Package Type:

    • The device is typically housed in a compact package, such as a DPAK or similar, which allows for easy integration into various circuit designs while ensuring good thermal dissipation.
  6. Gate Threshold Voltage:

    • The gate threshold voltage is designed to be low, enabling the MOSFET to turn on quickly and efficiently with minimal gate drive voltage.
  7. Thermal Performance:

    • The BSD223PH6327XTSA1 is engineered to operate effectively at elevated temperatures, making it suitable for automotive applications where temperature fluctuations are common.
  8. Applications:

    • This MOSFET is ideal for use in DC-DC converters, motor drivers, and other power management systems. Its robust design makes it suitable for both automotive and industrial applications, including electric vehicles, power supplies, and battery management systems.
  9. Reliability:

    • Infineon Technologies is known for its commitment to quality and reliability, and the BSD223PH6327XTSA1 is no exception. It is designed to meet stringent automotive standards, ensuring long-term performance in demanding environments.

Summary:

The BSD223PH6327XTSA1 from Infineon Technologies is a high-performance N-channel MOSFET that excels in power management applications. With its low on-resistance, high current handling capability, and robust thermal performance, it is well-suited for a variety of applications, particularly in the automotive sector. Its compact packaging and reliable operation make it a preferred choice for engineers looking to optimize efficiency and performance in their designs.

Fast scan

Popular Specs Surfaced First

Product Parameter

FET Technology

METAL-OXIDE SEMICONDUCTOR

Product Parameter

Drain To Source Voltage (Vdss)

20V

Product Parameter

Number Of Elements

2

Product Parameter

Rise Time

5ns

Product Parameter

FET Feature

Logic Level Gate

Product Parameter

Turn On Delay Time

3.8 ns

FET Technology
METAL-OXIDE SEMICONDUCTOR
Drain To Source Voltage (Vdss)
20V
Number Of Elements
2
Rise Time
5ns
FET Feature
Logic Level Gate
Turn On Delay Time
3.8 ns
Max Dual Supply Voltage
-20V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Turn-Off Delay Time
5.1 ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Published
2002
Packaging
Tape & Reel (TR)
Factory Lead Time
10 Weeks
Halogen Free
Halogen Free
Terminal Form
GULL WING
Width
1.25mm
Max Power Dissipation
250mW
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Additional Feature
AVALANCHE RATED
Reference Standard
AEC-Q101
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reflow Temperature-Max (S)
NOT SPECIFIED
Voltage - Rated DC
-20V
Length
2mm
Height
800μm
Gate To Source Voltage (Vgs)
12V
FET Type
2 P-Channel (Dual)
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Series
OptiMOS™
Feedback Cap-Max (Crss)
22 pF
HTS Code
8541.21.00.95
Gate Charge (Qg) (Max) @ Vgs
0.62nC @ 4.5V
Rds On (Max) @ Id, Vgs
1.2 Ω @ 390mA, 4.5V
Continuous Drain Current (ID)
390mA
Input Capacitance (Ciss) (Max) @ Vds
56pF @ 15V
Vgs(Th) (Max) @ Id
1.2V @ 1.5μA
Package / Case
6-VSSOP, SC-88, SOT-363
Base Part Number
BSD223
Manufacturer'S Part No.
BSD223PH6327XTSA1
Drain Current-Max (Abs) (ID)
0.39A
Current Rating
-350mA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.21.0095
ECCN Code
EAR99

Common questions

Product FAQ

Quick answers for buyers reviewing BSD223PH6327XTSA1, stock, documentation, and sourcing steps.

What is BSD223PH6327XTSA1?

BSD223PH6327XTSA1 is a Transistors - FETs, MOSFETs - Arrays component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for BSD223PH6327XTSA1?

BSD223PH6327XTSA1 is listed with package reference SOT363. The current product description is MOSFET 2P-CH 20V 0.39A SOT363, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is BSD223PH6327XTSA1 available in stock?

This page currently shows 15762 units in stock and 13820 units available for BSD223PH6327XTSA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for BSD223PH6327XTSA1?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for BSD223PH6327XTSA1 by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for BSD223PH6327XTSA1?

Yes. This page links to the datasheet for BSD223PH6327XTSA1 by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify BSD223PH6327XTSA1 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for BSD223PH6327XTSA1 before approving the order.

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