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NSS35200CF8T1G Transistors - Bipolar (BJT) - Single by ON Semiconductor

NSS35200CF8T1G is a Transistors - Bipolar (BJT) - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single product path. TRANS PNP 35V 2A 8CHIPFET. TrustCompo combines the available model, brand, hierarchy, and specification details around NSS35200CF8T1G so buyers can move faster from review to quotation.

RoHS
Datasheet
NSS35200CF8T1G Transistors - Bipolar (BJT) - Single by ON Semiconductor | TrustCompo
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Documentation support

Pre-shipment inspection review

Part Number

NSS35200CF8T1G

Internal code

TCE000098885

Package

-

Manufacturer

ON Semiconductor

Key specifications

Series

-

Min Quantity

1

Category

Discrete Semiconductor Products

Sub Category

Transistors - Bipolar (BJT) - Single

Description

TRANS PNP 35V 2A 8CHIPFET

key Attributes

-

Datasheet

View NSS35200CF8T1G Datasheet

Technical document

Open The Official Datasheet

Review the latest datasheet for NSS35200CF8T1G from ON Semiconductor in a separate tab so engineers and buyers can check package, electrical characteristics, and application details without leaving this product page.

View NSS35200CF8T1G Datasheet

Why request a quote

Use the RFQ step to confirm the commercial and documentation details buyers usually need before placing an order.

RoHS, REACH, and lead-free documentation can be confirmed during RFQ
Traceability and Certificate of Conformance support available on request
Pre-shipment inspection report support for quality review

Trust signals

Globally recognized certifications

4 certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

Ordering workflow

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How to order this product

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1

Confirm part and quantity

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2

Send RFQ or sample request

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3

Align delivery, payment, and documentation

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Policies buyers usually check

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Shipping & Delivery

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Quality & Traceability Center

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Structured product content

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Product overview

Overview

TRANS PNP 35V 2A 8CHIPFET

Fast scan

Popular Specs Surfaced First

Product Parameter

Terminal Finish

Tin (Sn)

Product Parameter

Number Of Elements

1

Product Parameter

Transistor Type

PNP

Product Parameter

Max Breakdown Voltage

35V

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Terminal Finish
Tin (Sn)
Number Of Elements
1
Transistor Type
PNP
Max Breakdown Voltage
35V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
ECCN Code
EAR99
HTSUS
8541.21.0075
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2006
Packaging
Tape & Reel (TR)
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Terminal Position
DUAL
Element Configuration
Single
Factory Lead Time
2 Weeks
Manufacturer
ON Semiconductor
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Subcategory
Other Transistors
Terminal Form
C BEND
Surface Mount
YES
Radiation Hardening
No
Pbfree Code
yes
Number Of Pins
8
Number Of Terminations
8
Pin Count
8
Frequency
100MHz
Current Rating
-2A
Sub-Categories
Transistors - Bipolar (BJT) - Single
Max Collector Current
2A
Max Power Dissipation
635mW
Emitter Base Voltage (VEBO)
5V
Current - Collector Cutoff (Max)
100nA
Polarity/Channel Type
PNP
HFE Min
100
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-300mV
Collector Emitter Voltage (VCEO)
35V
Collector Base Voltage (VCBO)
55V
DC Current Gain (HFE) (Min) @ Ic, Vce
100 @ 1.5A 2V
Package / Case
8-SMD, Flat Lead
Power Dissipation
13.5W
Base Part Number
NSS35200
Voltage - Rated DC
-35V
Collector Emitter Breakdown Voltage
35V
Vce Saturation (Max) @ Ib, Ic
300mV @ 20mA, 2A
Manufacturer'S Part No.
NSS35200CF8T1G
Power - Max
635mW

Common questions

Product FAQ

Quick answers for buyers reviewing NSS35200CF8T1G, stock, documentation, and sourcing steps.

What is NSS35200CF8T1G?

NSS35200CF8T1G is a Transistors - Bipolar (BJT) - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for NSS35200CF8T1G?

NSS35200CF8T1G is listed with package reference -. The current product description is TRANS PNP 35V 2A 8CHIPFET, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is NSS35200CF8T1G available in stock?

This page currently shows 79904 units in stock and 22702 units available for NSS35200CF8T1G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for NSS35200CF8T1G?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for NSS35200CF8T1G by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for NSS35200CF8T1G?

Yes. This page links to the datasheet for NSS35200CF8T1G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify NSS35200CF8T1G before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for NSS35200CF8T1G before approving the order.

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