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Request evaluation samplesMMBT5551LT1G Transistors - Bipolar (BJT) - Single by ON Semiconductor
MMBT5551LT1G is a Transistors - Bipolar (BJT) - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single product path. Known package information currently points to SOT23 under the ON Semiconductor brand listing. TRANS NPN 160V 0.6A SOT23. TrustCompo combines the available model, brand, hierarchy, and specification details around MMBT5551LT1G so buyers can move faster from review to quotation.
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Datasheet
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Key specifications
Series
-
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - Bipolar (BJT) - SingleDescription
TRANS NPN 160V 0.6A SOT23
key Attributes
-
Datasheet
View MMBT5551LT1G DatasheetTechnical document
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
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ESD Control
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Product overview
Overview
The MMBT5551LT1G is a high-performance NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for general-purpose amplification and switching applications. Below is a detailed description of its key features and specifications:
Package and Form Factor
- Package Type: The MMBT5551LT1G is typically housed in a small SOT-23 package, which is a surface-mount device (SMD) that allows for efficient use of board space and is suitable for automated assembly processes.
- Dimensions: The SOT-23 package has compact dimensions, making it ideal for applications where space is a constraint.
Electrical Characteristics
- Collector-Emitter Voltage (Vce): The maximum collector-emitter voltage is rated at 45V, allowing it to handle a wide range of voltage applications.
- Collector Current (Ic): The maximum collector current is rated at 600mA, which provides flexibility in various circuit designs.
- DC Current Gain (hFE): The transistor exhibits a DC current gain (hFE) typically in the range of 100 to 300, depending on the collector current, which indicates its efficiency in amplifying signals.
- Transition Frequency (fT): The transition frequency is typically around 250 MHz, making it suitable for high-frequency applications.
Thermal Characteristics
- Junction Temperature (Tj): The maximum junction temperature is rated at 150°C, allowing for operation in high-temperature environments.
- Thermal Resistance: The thermal resistance from junction to ambient is low, which helps in effective heat dissipation during operation.
Applications
The MMBT5551LT1G is suitable for a variety of applications, including:
- Signal Amplification: It can be used in audio and RF amplification circuits.
- Switching Applications: The transistor is effective in switching applications, such as in relay drivers and motor control circuits.
- General Purpose: Its versatility makes it suitable for a wide range of electronic circuits, including consumer electronics, automotive, and industrial applications.
Additional Features
- Low Noise: The MMBT5551LT1G is designed to operate with low noise levels, making it ideal for sensitive applications.
- High Reliability: As a product from ON Semiconductor, it is manufactured under strict quality control standards, ensuring high reliability and performance.
Conclusion
The MMBT5551LT1G is a robust and versatile NPN transistor that offers excellent performance for various electronic applications. Its compact size, high voltage and current ratings, and favorable thermal characteristics make it a popular choice among engineers and designers in the electronics industry.
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Popular Specs Surfaced First
Product Attribute
Part Status
Active
Product Attribute
REACH Status
REACH Unaffected
Product Attribute
ECCN
EAR99
Product Attribute
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Product Attribute
Lead Free
Lead Free
Product Attribute
Mounting Type
Surface Mount
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2006
Factory Lead Time
4 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Terminal Form
GULL WING
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Manufacturer
ON Semiconductor
Current Rating
600mA
Height
1.11mm
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Weight
4.535924g
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Contact Plating
Tin
Radiation Hardening
No
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Length
2.9mm
Number Of Terminations
3
Max Power Dissipation
225mW
Power Dissipation
225mW
Width
1.3mm
Voltage - Rated DC
160V
Polarity/Channel Type
N-CHANNEL
Sub-Categories
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max)
100nA
Emitter Base Voltage (VEBO)
6V
Max Collector Current
600mA
DC Current Gain (HFE) (Min) @ Ic, Vce
80 @ 10mA 5V
HFE Min
80
Collector Emitter Saturation Voltage
200mV
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Voltage (VCEO)
160V
Collector Emitter Breakdown Voltage
160V
Collector Base Voltage (VCBO)
180V
VCEsat-Max
0.2 V
Manufacturer'S Part No.
MMBT5551LT1G
Base Part Number
MMBT5551
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.21.0095
ECCN Code
EAR99
Number Of Elements
1
Transistor Type
NPN
Max Breakdown Voltage
160V
Common questions
Product FAQ
Quick answers for buyers reviewing MMBT5551LT1G, stock, documentation, and sourcing steps.
What is MMBT5551LT1G?
MMBT5551LT1G is a Transistors - Bipolar (BJT) - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for MMBT5551LT1G?
MMBT5551LT1G is listed with package reference SOT23. The current product description is TRANS NPN 160V 0.6A SOT23, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is MMBT5551LT1G available in stock?
This page currently shows 96704 units in stock and 28491 units available for MMBT5551LT1G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for MMBT5551LT1G?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for MMBT5551LT1G by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for MMBT5551LT1G?
Yes. This page links to the datasheet for MMBT5551LT1G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify MMBT5551LT1G before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for MMBT5551LT1G before approving the order.
Transistors - Bipolar (BJT) - Single
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