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CSD25304W1015 Transistors - FETs, MOSFETs - Single by Texas Instruments

CSD25304W1015 is a Transistors - FETs, MOSFETs - Single model from Texas Instruments, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. MOSFET P-CH 20V 3A 6DSBGA. TrustCompo combines the available model, brand, hierarchy, and specification details around CSD25304W1015 so buyers can move faster from review to quotation.

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CSD25304W1015 Transistors - FETs, MOSFETs - Single by Texas Instruments | TrustCompo
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Part Number

CSD25304W1015

Internal code

TCE000085726

Package

-

Manufacturer

Texas Instruments

Key specifications

Series

NexFET™

Min Quantity

1

Description

MOSFET P-CH 20V 3A 6DSBGA

key Attributes

-

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RoHS, REACH, and lead-free documentation can be confirmed during RFQ
Traceability and Certificate of Conformance support available on request
Pre-shipment inspection report support for quality review

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Globally recognized certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

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Product overview

Overview

CSD25304W1015 is a specific part number that typically refers to a type of electronic component, likely a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Texas Instruments or a similar manufacturer. Here’s a detailed description based on common characteristics of such components:

Description of CSD25304W1015

Type: Power MOSFET

Manufacturer: Texas Instruments

Package: The CSD25304W1015 is housed in a compact, surface-mount package, often a DPAK or similar, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs).

Electrical Characteristics:

  • Voltage Rating: The device is designed to handle high voltages, typically in the range of 30V to 40V, making it suitable for various power management applications.
  • Current Rating: It can support continuous drain currents of up to 100A, depending on the thermal conditions and PCB layout.
  • RDS(on): The on-resistance (RDS(on)) is low, often in the milliohm range, which minimizes power loss during operation and enhances efficiency in power conversion applications.

Performance Features:

  • Fast Switching Speed: The CSD25304W1015 is optimized for fast switching, making it ideal for applications such as DC-DC converters, motor drivers, and power management systems.
  • Thermal Performance: With a robust thermal design, this MOSFET can dissipate heat effectively, allowing for higher power densities in compact designs.
  • Gate Threshold Voltage: The gate threshold voltage is typically low, enabling it to be driven by standard logic levels, which simplifies interfacing with microcontrollers and other digital logic devices.

Applications:

  • Power Supply Circuits: Used in buck converters, boost converters, and other power supply topologies.
  • Motor Control: Suitable for driving DC motors and brushless DC motors in various applications, including automotive and industrial systems.
  • Battery Management Systems: Effective in managing battery charging and discharging processes, enhancing the efficiency and lifespan of battery systems.

Environmental Considerations:

  • RoHS Compliant: The component is likely to be compliant with RoHS regulations, ensuring it is free from hazardous substances, making it suitable for environmentally conscious designs.

Pin Configuration: The pin layout is designed for easy integration into PCB designs, with clear markings for gate, drain, and source connections, facilitating straightforward assembly and soldering processes.

Summary

The CSD25304W1015 from Texas Instruments is a high-performance power MOSFET designed for demanding applications requiring efficient power management and thermal performance. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a versatile choice for engineers looking to optimize their electronic designs.

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Product Parameter

Number Of Elements

1

Product Parameter

Drain To Source Voltage (Vdss)

20V

Product Parameter

Turn On Delay Time

6 ns

Product Parameter

Turn-Off Delay Time

24 ns

Product Parameter

Rise Time

4ns

Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Number Of Elements
1
Drain To Source Voltage (Vdss)
20V
Turn On Delay Time
6 ns
Turn-Off Delay Time
24 ns
Rise Time
4ns
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-609 Code
e1
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Manufacturer
Texas
Element Configuration
Single
Terminal Form
BALL
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Series
NexFET™
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Width
1.8mm
Reflow Temperature-Max (S)
NOT SPECIFIED
Vgs (Max)
±8V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Gate To Source Voltage (Vgs)
8V
Terminal Position
BOTTOM
Height
1mm
Continuous Drain Current (ID)
3A
Current - Continuous Drain (Id) @ 25°C
3A Ta
Drain Current-Max (Abs) (ID)
3A
Length
1.5mm
Power Dissipation-Max
750mW Ta
Fall Time (Typ)
10 ns
DS Breakdown Voltage-Min
20V
Vgs(Th) (Max) @ Id
1.15V @ 250μA
Thickness
2mm
Drain-Source On Resistance-Max
0.092Ohm
Package / Case
6-UFBGA, DSBGA
Base Part Number
CSD25304
Manufacturer'S Part No.
CSD25304W1015
Rds On (Max) @ Id, Vgs
32.5m Ω @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
595pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
4.4nC @ 4.5V

Common questions

Product FAQ

Quick answers for buyers reviewing CSD25304W1015, stock, documentation, and sourcing steps.

What is CSD25304W1015?

CSD25304W1015 is a Transistors - FETs, MOSFETs - Single component from Texas Instruments. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for CSD25304W1015?

CSD25304W1015 is listed with package reference -. The current product description is MOSFET P-CH 20V 3A 6DSBGA, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is CSD25304W1015 available in stock?

This page currently shows 110413 units in stock and 21867 units available for CSD25304W1015. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for CSD25304W1015?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for CSD25304W1015 by Texas Instruments. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for CSD25304W1015?

A dedicated datasheet link is not currently listed for CSD25304W1015 by Texas Instruments. Contact us with the part number and required parameters so the team can help confirm documentation during quotation.

How should buyers verify CSD25304W1015 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for CSD25304W1015 before approving the order.

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