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CSD17318Q2 Transistors - FETs, MOSFETs - Single by Texas Instruments

CSD17318Q2 is a Transistors - FETs, MOSFETs - Single model from Texas Instruments, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. 30V N CH MOSFET. TrustCompo combines the available model, brand, hierarchy, and specification details around CSD17318Q2 so buyers can move faster from review to quotation.

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CSD17318Q2 Transistors - FETs, MOSFETs - Single by Texas Instruments | TrustCompo
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Part Number

CSD17318Q2

Internal code

TCE000085718

Package

-

Manufacturer

Texas Instruments

Key specifications

Series

NexFET™

Min Quantity

1

Description

30V N CH MOSFET

key Attributes

-

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RoHS, REACH, and lead-free documentation can be confirmed during RFQ
Traceability and Certificate of Conformance support available on request
Pre-shipment inspection report support for quality review

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Globally recognized certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

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Product overview

Overview

CSD17318Q2 is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for high-efficiency power management applications, particularly in switching power supplies, motor drivers, and other power conversion systems.

Key Features:

  1. Type: N-channel MOSFET
  2. Voltage Rating: The CSD17318Q2 typically has a high breakdown voltage, often around 30V, making it suitable for various applications where voltage levels can fluctuate.
  3. Current Rating: It can handle significant continuous drain current, often in the range of 30A or more, which allows it to drive heavy loads effectively.
  4. RDS(on): The on-resistance (RDS(on)) is low, usually in the milliohm range, which minimizes power loss during operation and enhances efficiency.
  5. Package: The device is usually housed in a compact, thermally efficient package, such as a DPAK or SOIC, which aids in heat dissipation and allows for easier integration into circuit designs.
  6. Gate Threshold Voltage: The gate threshold voltage is designed to be low, enabling the MOSFET to turn on quickly and efficiently with minimal gate drive voltage.
  7. Thermal Performance: The CSD17318Q2 is engineered for good thermal performance, often featuring a low thermal resistance to ensure that it can operate reliably under high load conditions without overheating.

Applications:

  • Power Management: Ideal for use in DC-DC converters, where efficient switching is crucial for energy savings.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
  • Battery Management Systems: Can be used in systems that require efficient power distribution and management, such as in electric vehicles or renewable energy systems.

Performance Characteristics:

  • Switching Speed: The CSD17318Q2 is designed for fast switching, which is essential for high-frequency applications.
  • Robustness: It typically features built-in protection mechanisms against over-voltage and over-current conditions, enhancing reliability in demanding environments.

Conclusion:

The CSD17318Q2 from Texas Instruments is a versatile and efficient power MOSFET that meets the needs of modern electronic designs requiring high performance, reliability, and compactness. Its combination of high current handling, low on-resistance, and excellent thermal characteristics makes it a preferred choice for engineers looking to optimize power management solutions.

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Popular Specs Surfaced First

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

JESD-609 Code

e4

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Product Attribute

Part Status

Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-609 Code
e4
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Surface Mount
Factory Lead Time
6 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Manufacturer
Texas
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Terminal Form
NO LEAD
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Series
NexFET™
Surface Mount
YES
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Power Dissipation
2.5W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reflow Temperature-Max (S)
NOT SPECIFIED
Length
2mm
Height
800μm
Thickness
750μm
Width
2mm
Drain To Source Breakdown Voltage
30V
Package / Case
6-WDFN Exposed Pad
Gate To Source Voltage (Vgs)
10V
Vgs(Th) (Max) @ Id
1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C
25A Tc
Continuous Drain Current (ID)
10A
Vgs (Max)
±10V
Gate Charge (Qg) (Max) @ Vgs
6nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 8V
Drain-Source On Resistance-Max
0.03Ohm
Power Dissipation-Max
16W Tc
Base Part Number
CSD17318
Manufacturer'S Part No.
CSD17318Q2
Rds On (Max) @ Id, Vgs
15.1m Ω @ 8A, 8V
Avalanche Energy Rating (Eas)
7.7 mJ
Input Capacitance (Ciss) (Max) @ Vds
879pF @ 15V
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
5 ns
Turn-Off Delay Time
13 ns

Common questions

Product FAQ

Quick answers for buyers reviewing CSD17318Q2, stock, documentation, and sourcing steps.

What is CSD17318Q2?

CSD17318Q2 is a Transistors - FETs, MOSFETs - Single component from Texas Instruments. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for CSD17318Q2?

CSD17318Q2 is listed with package reference -. The current product description is 30V N CH MOSFET, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is CSD17318Q2 available in stock?

This page currently shows 155569 units in stock and 65167 units available for CSD17318Q2. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for CSD17318Q2?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for CSD17318Q2 by Texas Instruments. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for CSD17318Q2?

A dedicated datasheet link is not currently listed for CSD17318Q2 by Texas Instruments. Contact us with the part number and required parameters so the team can help confirm documentation during quotation.

How should buyers verify CSD17318Q2 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for CSD17318Q2 before approving the order.

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