Supply original NAND01GW3B2CZA6E, Memory, by Micron Technology

IC FLASH 1G PARALLEL 63VFBGA

RoHS
Supply original NAND01GW3B2CZA6E, Memory, by Micron Technology | TrustCompo

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Part Number

NAND01GW3B2CZA6E

Internal code

TCE000080935

Package

-

Manufacturer

Micron Technology

Key specifications

Serise

-

Min Quantity

1

Sub Categroy

Memory

Description

IC FLASH 1G PARALLEL 63VFBGA

key Attributes

-

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ISO 14001

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CoC Available on Request

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Product overview

Overview

IC FLASH 1G PARALLEL 63VFBGA

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Packaging

Tray

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Published

2004

Product Attribute

Part Status

Obsolete

Product Attribute

Categories

Integrated Circuits (ICs)

Packaging
Tray
REACH Status
REACH Unaffected
Mounting Type
Surface Mount
Published
2004
Part Status
Obsolete
Categories
Integrated Circuits (ICs)
Terminal Pitch
0.8mm
Operating Temperature
-40°C~85°C TA
Supply Voltage
3V
Number Of Functions
1
Radiation Hardening
No
Mount
Surface Mount
Nominal Supply Current
30mA
Terminal Position
BOTTOM
Memory Type
Non-Volatile
ECCN
3A991B1A
HTS Code
8542.32.00.51
Memory Interface
Parallel
Sub-Categories
Memory
Number Of Sectors/Size
1K
Ready/Busy
YES
Command User Interface
YES
Sync/Async
Asynchronous
Memory Format
FLASH
Length
11mm
Word Size
8b
Number Of Pins
63
Number Of Terminations
63
Memory Width
8
Standby Current-Max
0.00005A
Manufacturer
Micron Technology
Sector Size
128K
Data Polling
NO
Toggle Bit
NO
Address Bus Width
28b
Base Part Number
NAND01G-A
Organization
128MX8
Technology
FLASH - NAND
Package / Case
63-TFBGA
Pin Count
63
Write Cycle Time - Word, Page
25ns
Manufacturer'S Part No.
NAND01GW3B2CZA6E
Write Cycle Time-Max (TWC)
25ms
Access Time (Max)
25000 ns
Height Seated (Max)
1.05mm
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
JESD-609 Code
e1
ECCN Code
3A991.B.1.A
HTSUS
8542.32.0071
Page Size
2Kwords
Supply Voltage-Max (Vsup)
3.6V
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Power Supplies
3/3.3V
Supply Voltage-Min (Vsup)
2.7V
Voltage - Supply
2.7V~3.6V
Programming Voltage
3V
Density
1 Gb
Memory Size
1Gb 128M x 8

Common questions

Product FAQ

Quick answers for buyers reviewing NAND01GW3B2CZA6E, stock, documentation, and sourcing steps.

What is NAND01GW3B2CZA6E?

NAND01GW3B2CZA6E is a Memory component from Micron Technology. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for NAND01GW3B2CZA6E?

NAND01GW3B2CZA6E is listed with package reference -. The current product description is IC FLASH 1G PARALLEL 63VFBGA, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is NAND01GW3B2CZA6E available in stock?

This page currently shows 11855 units in stock and 11855 units available for NAND01GW3B2CZA6E. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for NAND01GW3B2CZA6E?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for NAND01GW3B2CZA6E by Micron Technology. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for NAND01GW3B2CZA6E?

A dedicated datasheet link is not currently listed for NAND01GW3B2CZA6E by Micron Technology. Contact us with the part number and required parameters so the team can help confirm documentation during quotation.

How should buyers verify NAND01GW3B2CZA6E before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for NAND01GW3B2CZA6E before approving the order.

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