Supply original 2N6667G, Transistors - Bipolar (BJT) - Single, by ON Semiconductor

TRANS PNP DARL 60V 10A TO220AB

RoHS
Datasheet
Supply original 2N6667G, Transistors - Bipolar (BJT) - Single, by ON Semiconductor | TrustCompo

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Part Number

2N6667G

Internal code

TCE000080196

Package

TO-220-3

Manufacturer

ON Semiconductor

Key specifications

Serise

-

Min Quantity

1

Description

TRANS PNP DARL 60V 10A TO220AB

key Attributes

-

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Product overview

Overview

TRANS PNP DARL 60V 10A TO220AB

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Number Of Elements
1
Transistor Type
PNP - Darlington
Part Status
Active
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Published
2007
Peak Reflow Temperature (Cel)
260
Element Configuration
Single
Factory Lead Time
2 Weeks
Manufacturer
ON Semiconductor
Max Power Dissipation
2W
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Subcategory
Other Transistors
JEDEC-95 Code
TO-220AB
Package / Case
TO-220-3
Operating Temperature
-65°C~150°C TJ
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Surface Mount
NO
Number Of Terminations
3
Power Dissipation
2W
Voltage - Rated DC
-60V
Weight
6.000006g
Case Connection
COLLECTOR
Sub-Categories
Transistors - Bipolar (BJT) - Single
HFE Min
1000
Transistor Application
AMPLIFIER
Polarity
PNP
Width
4.83mm
Height
15.75mm
Emitter Base Voltage (VEBO)
5V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
Collector Base Voltage (VCBO)
60V
Collector Emitter Saturation Voltage
2V
Current - Collector Cutoff (Max)
1mA
Current Rating
-10A
Length
10.53mm
DC Current Gain (HFE) (Min) @ Ic, Vce
1000 @ 5A 3V
Vce Saturation (Max) @ Ib, Ic
3V @ 100mA, 10A
Continuous Collector Current
10A
Base Part Number
2N6667
Manufacturer'S Part No.
2N6667G

Common questions

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What is 2N6667G?

2N6667G is a Transistors - Bipolar (BJT) - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for 2N6667G?

2N6667G is listed with package reference TO-220-3. The current product description is TRANS PNP DARL 60V 10A TO220AB, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is 2N6667G available in stock?

This page currently shows 30330 units in stock and 14196 units available for 2N6667G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for 2N6667G?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for 2N6667G by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for 2N6667G?

Yes. This page links to the datasheet for 2N6667G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify 2N6667G before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for 2N6667G before approving the order.

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