Supply original PSMN130-200D,118, Transistors - FETs, MOSFETs - Single, by Nexperia

MOSFET N-CH 200V 20A DPAK

RoHS
Datasheet
Supply original PSMN130-200D,118, Transistors - FETs, MOSFETs - Single, by Nexperia | TrustCompo

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Part Number

PSMN130-200D,118

Internal code

TCE000080001

Package

2010

Manufacturer

Nexperia

Key specifications

Serise

TrenchMOS™

Min Quantity

1

Description

MOSFET N-CH 200V 20A DPAK

key Attributes

-

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4 certifications

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Product overview

Overview

MOSFET N-CH 200V 20A DPAK

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
Moisture Sensitivity Level (MSL)
1 (Unlimited)
JESD-30 Code
R-PSSO-G2
ECCN Code
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Published
2010
Terminal Form
GULL WING
Element Configuration
Single
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Part Status
Last Time Buy
Power Dissipation
150W
Power Dissipation-Max
150W Tc
Manufacturer
Nexperia
Surface Mount
YES
Radiation Hardening
No
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Pin Count
3
Gate To Source Voltage (Vgs)
20V
Height
2.38mm
Drive Voltage (Max Rds On,Min Rds On)
10V
Threshold Voltage
3V
Continuous Drain Current (ID)
20A
Length
6.35mm
Drain To Source Breakdown Voltage
200V
Gate Charge (Qg) (Max) @ Vgs
65nC @ 10V
Vgs(Th) (Max) @ Id
4V @ 1mA
Fall Time (Typ)
38 ns
Resistance
130mOhm
Weight
453.59237mg
Current - Continuous Drain (Id) @ 25°C
20A Tc
Series
TrenchMOS™
Pulsed Drain Current-Max (IDM)
80A
Avalanche Energy Rating (Eas)
252 mJ
Input Capacitance (Ciss) (Max) @ Vds
2470pF @ 25V
Rds On (Max) @ Id, Vgs
130m Ω @ 25A, 10V
Manufacturer'S Part No.
PSMN130-200D,118
Terminal Finish
Tin (Sn)
Number Of Elements
1
Turn On Delay Time
15 ns
Turn-Off Delay Time
50 ns
Rise Time
46ns
Max Dual Supply Voltage
200V

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What is PSMN130-200D,118?

PSMN130-200D,118 is a Transistors - FETs, MOSFETs - Single component from Nexperia. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for PSMN130-200D,118?

PSMN130-200D,118 is listed with package reference 2010. The current product description is MOSFET N-CH 200V 20A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is PSMN130-200D,118 available in stock?

This page currently shows 54434 units in stock and 47123 units available for PSMN130-200D,118. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for PSMN130-200D,118 by Nexperia. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for PSMN130-200D,118?

Yes. This page links to the datasheet for PSMN130-200D,118 by Nexperia, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify PSMN130-200D,118 before ordering?

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