Supply original NSS12501UW3T2G, Transistors - Bipolar (BJT) - Single, by ON Semiconductor

TRANS NPN 12V 5A 3-WDFN

RoHS
Datasheet
Supply original NSS12501UW3T2G, Transistors - Bipolar (BJT) - Single, by ON Semiconductor | TrustCompo

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Part Number

NSS12501UW3T2G

Internal code

TCE000079693

Package

-

Manufacturer

ON Semiconductor

Key specifications

Serise

-

Min Quantity

1

Description

TRANS NPN 12V 5A 3-WDFN

key Attributes

-

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Product overview

Overview

TRANS NPN 12V 5A 3-WDFN

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Detailed Specifications

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

ECCN Code

EAR99

Export Classifications & Environmental

HTSUS

8541.21.0075

Product Parameter

Terminal Finish

Tin (Sn)

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
ECCN Code
EAR99
HTSUS
8541.21.0075
Terminal Finish
Tin (Sn)
Number Of Elements
1
Transistor Type
NPN
Max Breakdown Voltage
12V
Part Status
Active
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2007
Packaging
Tape & Reel (TR)
Halogen Free
Halogen Free
Terminal Position
DUAL
Element Configuration
Single
Factory Lead Time
2 Weeks
Frequency
150MHz
Manufacturer
ON Semiconductor
Height
750μm
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Power Dissipation
1.5W
Operating Temperature
-55°C~150°C TJ
Subcategory
Other Transistors
Surface Mount
YES
Radiation Hardening
No
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Number Of Terminations
3
Max Power Dissipation
1.5W
Length
2mm
Width
2mm
Case Connection
COLLECTOR
Sub-Categories
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type
NPN
Current - Collector Cutoff (Max)
100nA ICBO
Gain Bandwidth Product
150MHz
Max Collector Current
5A
Emitter Base Voltage (VEBO)
6V
Transition Frequency
150MHz
HFE Min
200
Collector Emitter Saturation Voltage
120mV
Collector Emitter Voltage (VCEO)
12V
Collector Emitter Breakdown Voltage
12V
Collector Base Voltage (VCBO)
12V
DC Current Gain (HFE) (Min) @ Ic, Vce
200 @ 2A 2V
Base Part Number
NSS12501
Vce Saturation (Max) @ Ib, Ic
120mV @ 400mA, 4A
Power - Max
875mW
Manufacturer'S Part No.
NSS12501UW3T2G
Turn Off Time-Max (Toff)
420ns
Package / Case
3-WDFN Exposed Pad

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What is NSS12501UW3T2G?

NSS12501UW3T2G is a Transistors - Bipolar (BJT) - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for NSS12501UW3T2G?

NSS12501UW3T2G is listed with package reference -. The current product description is TRANS NPN 12V 5A 3-WDFN, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is NSS12501UW3T2G available in stock?

This page currently shows 86166 units in stock and 72078 units available for NSS12501UW3T2G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for NSS12501UW3T2G?

Yes. This page links to the datasheet for NSS12501UW3T2G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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