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Infineon TechnologiesDiscrete Semiconductor ProductsTransistors - IGBTs - Single

Supply original IRGB4060DPBF, Transistors - IGBTs - Single, by Infineon Technologies

IGBT 600V 16A 99W TO220AB

RoHS
Datasheet
Supply original IRGB4060DPBF, Transistors - IGBTs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRGB4060DPBF

Internal code

TCE000078314

Package

TO-220-3

Manufacturer

Infineon Technologies

Key specifications

Serise

-

Min Quantity

1

Category

Discrete Semiconductor Products

Sub Categroy

Transistors - IGBTs - Single

Description

IGBT 600V 16A 99W TO220AB

key Attributes

-

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Globally recognized certifications

4 certifications

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ISO 9001

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AS9120B

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ISO 14001

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Product overview

Overview

IGBT 600V 16A 99W TO220AB

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Detailed Specifications

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Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

RoHS Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Product Attribute

Mounting Type

Through Hole

Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Published
2006
Factory Lead Time
16 Weeks
Part Status
Obsolete
Height
9.02mm
Element Configuration
Single
Length
10.66mm
Operating Temperature
-55°C~175°C TJ
Manufacturer
Infineon Technologies
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
JEDEC-95 Code
TO-220AB
Package / Case
TO-220-3
Radiation Hardening
No
Mount
Through Hole
Number Of Pins
3
Number Of Terminations
3
Termination
Through Hole
Width
4.82mm
Weight
6.000006g
Max Collector Current
16A
Case Connection
COLLECTOR
Gate-Emitter Voltage-Max
20V
Subcategory
Insulated Gate BIP Transistors
Sub-Categories
Transistors - IGBTs - Single
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Gate-Emitter Thr Voltage-Max
6.5V
Turn On Time
45 ns
Collector Emitter Saturation Voltage
1.85V
Fall Time-Max (Tf)
26ns
Switching Energy
70μJ (on), 145μJ (off)
Td (On/Off) @ 25°C
30ns/95ns
Power Dissipation
99W
Vce(On) (Max) @ Vge, Ic
1.85V @ 15V, 8A
Collector Emitter Breakdown Voltage
1.95V
Collector Emitter Voltage (VCEO)
1.85V
Gate Charge
19nC
Turn Off Time-Nom (Toff)
152 ns
Max Power Dissipation
99W
Test Condition
400V, 8A, 47 Ω, 15V
Manufacturer'S Part No.
IRGB4060DPBF
Turn On Delay Time
39 ns
Turn-Off Delay Time
106 ns
Number Of Elements
1
Rise Time
15ns
Reverse Recovery Time
60 ns
Input Type
Standard
IGBT Type
Trench
Current - Collector Pulsed (Icm)
32A
Voltage - Collector Emitter Breakdown (Max)
600V

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What is IRGB4060DPBF?

IRGB4060DPBF is a Transistors - IGBTs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRGB4060DPBF?

IRGB4060DPBF is listed with package reference TO-220-3. The current product description is IGBT 600V 16A 99W TO220AB, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRGB4060DPBF available in stock?

This page currently shows 91189 units in stock and 23846 units available for IRGB4060DPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRGB4060DPBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for IRGB4060DPBF?

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Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IRGB4060DPBF before approving the order.

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