Supply original HGTG30N60B3, Transistors - IGBTs - Single, by ON Semiconductor

IGBT 600V 60A 208W TO247

RoHS
Datasheet
Supply original HGTG30N60B3, Transistors - IGBTs - Single, by ON Semiconductor | TrustCompo

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Part Number

HGTG30N60B3

Internal code

TCE000078201

Package

TO247

Manufacturer

ON Semiconductor

Key specifications

Serise

-

Min Quantity

1

Description

IGBT 600V 60A 208W TO247

key Attributes

-

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Product overview

Overview

IGBT 600V 60A 208W TO247

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Number Of Elements

1

Product Parameter

Input Type

Standard

Product Parameter

Max Breakdown Voltage

600V

Product Parameter

Current - Collector Pulsed (Icm)

220A

Product Attribute

Part Status

Active

Product Attribute

Mounting Type

Through Hole

Number Of Elements
1
Input Type
Standard
Max Breakdown Voltage
600V
Current - Collector Pulsed (Icm)
220A
Part Status
Active
Mounting Type
Through Hole
Lead Free
Lead Free
Packaging
Tube
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
4 Weeks
Published
2013
Element Configuration
Single
Length
15.87mm
Manufacturer
ON Semiconductor
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Current Rating
60A
Package / Case
TO-247-3
Contact Plating
Tin
Radiation Hardening
No
Pbfree Code
yes
Mount
Through Hole
Number Of Pins
3
Number Of Terminations
3
Voltage - Rated DC
600V
Width
4.82mm
Gate-Emitter Thr Voltage-Max
6V
Case Connection
COLLECTOR
Gate-Emitter Voltage-Max
20V
Subcategory
Insulated Gate BIP Transistors
Sub-Categories
Transistors - IGBTs - Single
Collector Emitter Breakdown Voltage
600V
HTS Code
8541.29.00.95
Additional Feature
LOW CONDUCTION LOSS
Collector Emitter Voltage (VCEO)
600V
Height
20.82mm
Polarity
NPN
Transistor Application
POWER CONTROL
Weight
6.39g
Base Part Number
HGTG30N60
Power Dissipation
208W
Max Power Dissipation
208W
Max Collector Current
60A
Vce(On) (Max) @ Vge, Ic
1.9V @ 15V, 30A
Turn On Time
56 ns
Fall Time-Max (Tf)
150ns
Collector Emitter Saturation Voltage
1.45V
Turn Off Time-Nom (Toff)
365 ns
Continuous Collector Current
60A
Td (On/Off) @ 25°C
36ns/137ns
Switching Energy
500μJ (on), 680μJ (off)
Manufacturer'S Part No.
HGTG30N60B3
Test Condition
480V, 30A, 3 Ω, 15V
Gate Charge
170nC
JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99

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What is HGTG30N60B3?

HGTG30N60B3 is a Transistors - IGBTs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for HGTG30N60B3?

HGTG30N60B3 is listed with package reference TO247. The current product description is IGBT 600V 60A 208W TO247, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is HGTG30N60B3 available in stock?

This page currently shows 18018 units in stock and 18018 units available for HGTG30N60B3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for HGTG30N60B3 by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for HGTG30N60B3?

Yes. This page links to the datasheet for HGTG30N60B3 by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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