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Supply original FGB7N60UNDF, Transistors - IGBTs - Single, by ON Semiconductor

IGBT 600V 14A 83W D2PAK

RoHS
Datasheet
Supply original FGB7N60UNDF, Transistors - IGBTs - Single, by ON Semiconductor | TrustCompo

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Part Number

FGB7N60UNDF

Internal code

TCE000077791

Package

TO-263-3

Manufacturer

ON Semiconductor

Key specifications

Serise

-

Min Quantity

1

Category

Discrete Semiconductor Products

Sub Categroy

Transistors - IGBTs - Single

Description

IGBT 600V 14A 83W D2PAK

key Attributes

-

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4 certifications

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AS9120B

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ISO 14001

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Authenticity Verification

CoC Available on Request

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Product overview

Overview

IGBT 600V 14A 83W D2PAK

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Detailed Specifications

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Number Of Elements
1
Input Type
Standard
IGBT Type
NPT
Current - Collector Pulsed (Icm)
21A
Reverse Recovery Time
32.3 ns
Part Status
Active
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Mounting Type
Surface Mount
Factory Lead Time
5 Weeks
Terminal Form
GULL WING
Published
2013
Length
10.67mm
Element Configuration
Single
Manufacturer
ON Semiconductor
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight
1.31247g
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Number Of Terminations
2
Height
4.83mm
Width
9.65mm
Case Connection
COLLECTOR
Gate-Emitter Voltage-Max
20V
Transistor Application
MOTOR CONTROL
Subcategory
Insulated Gate BIP Transistors
Sub-Categories
Transistors - IGBTs - Single
Polarity/Channel Type
N-CHANNEL
Collector Emitter Breakdown Voltage
600V
HTS Code
8541.29.00.95
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
14A
Collector Emitter Saturation Voltage
2.1V
Gate-Emitter Thr Voltage-Max
8.5V
Td (On/Off) @ 25°C
5.9ns/32.3ns
Switching Energy
99μJ (on), 104μJ (off)
Max Power Dissipation
83W
Turn Off Time-Nom (Toff)
146.8 ns
Manufacturer'S Part No.
FGB7N60UNDF
Gate Charge
18nC
Turn On Time
10.3 ns
Vce(On) (Max) @ Vge, Ic
2.3V @ 15V, 7A
Fall Time-Max (Tf)
89ns
Power - Max
83W
Test Condition
400V, 7A, 10 Ω, 15V

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What is FGB7N60UNDF?

FGB7N60UNDF is a Transistors - IGBTs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FGB7N60UNDF?

FGB7N60UNDF is listed with package reference TO-263-3. The current product description is IGBT 600V 14A 83W D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FGB7N60UNDF available in stock?

This page currently shows 90260 units in stock and 11729 units available for FGB7N60UNDF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FGB7N60UNDF by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FGB7N60UNDF?

Yes. This page links to the datasheet for FGB7N60UNDF by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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