Supply original DTDG23YPT100, Transistors - Bipolar (BJT) - Single, Pre-Biased, by Rohm Semiconductor

TRANS PREBIAS NPN 1.5W MPT3

RoHS
Datasheet
Supply original DTDG23YPT100, Transistors - Bipolar (BJT) - Single, Pre-Biased, by Rohm Semiconductor | TrustCompo

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Part Number

DTDG23YPT100

Internal code

TCE000077707

Package

-

Manufacturer

Rohm Semiconductor

Key specifications

Serise

-

Min Quantity

1

Description

TRANS PREBIAS NPN 1.5W MPT3

key Attributes

-

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Product overview

Overview

TRANS PREBIAS NPN 1.5W MPT3

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Published

2006

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2006
Factory Lead Time
13 Weeks
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Element Configuration
Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Radiation Hardening
No
Height
1.5mm
Mount
Surface Mount
Pbfree Code
yes
Max Output Current
1A
Pin Count
3
Terminal Form
FLAT
Number Of Terminations
3
Max Power Dissipation
1.5W
Current Rating
1A
Max Operating Temperature
150°C
Number Of Pins
4
Voltage - Rated DC
60V
Operating Supply Voltage
60V
Max Collector Current
1A
Width
2.5mm
Reflow Temperature-Max (S)
10
Length
4.5mm
Manufacturer
Rohm Semiconductor
Case Connection
COLLECTOR
HFE Min
300
Collector Emitter Breakdown Voltage
60V
Package / Case
TO-243AA
DC Current Gain (HFE) (Min) @ Ic, Vce
300 @ 500mA 2V
Polarity
NPN
Transition Frequency
80MHz
Sub-Categories
Transistors - Bipolar (BJT) - Single, Pre-Biased
Subcategory
BIP General Purpose Small Signal
Current - Collector Cutoff (Max)
500nA
Resistor - Base (R1)
2.2 k Ω
Continuous Collector Current
1A
Resistor - Emitter Base (R2)
22 k Ω
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 500mA
Collector Emitter Voltage (VCEO)
400mV
Frequency - Transition
80MHz
Manufacturer'S Part No.
DTDG23YPT100
Base Part Number
DTDG23
Number Of Elements
1
Terminal Finish
Tin/Copper (Sn/Cu)
Max Breakdown Voltage
60V
Transistor Type
NPN - Pre-Biased
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-609 Code
e2
ECCN Code
EAR99
HTSUS
8541.29.0075
JESD-30 Code
R-PSSO-F3

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What is DTDG23YPT100?

DTDG23YPT100 is a Transistors - Bipolar (BJT) - Single, Pre-Biased component from Rohm Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for DTDG23YPT100?

DTDG23YPT100 is listed with package reference -. The current product description is TRANS PREBIAS NPN 1.5W MPT3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is DTDG23YPT100 available in stock?

This page currently shows 47498 units in stock and 22598 units available for DTDG23YPT100. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for DTDG23YPT100?

Yes. This page links to the datasheet for DTDG23YPT100 by Rohm Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify DTDG23YPT100 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for DTDG23YPT100 before approving the order.

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