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CSD13302W Transistors - FETs, MOSFETs - Single by Texas Instruments
CSD13302W is a Transistors - FETs, MOSFETs - Single model from Texas Instruments, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. MOSFET N-CH 12V 1.6A. TrustCompo combines the available model, brand, hierarchy, and specification details around CSD13302W so buyers can move faster from review to quotation.
RoHS
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Fast RFQ turnaround
Documentation support
Pre-shipment inspection review
Key specifications
Series
NexFET™
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 12V 1.6A
key Attributes
-
Why request a quote
Use the RFQ step to confirm the commercial and documentation details buyers usually need before placing an order.
RoHS, REACH, and lead-free documentation can be confirmed during RFQ
Traceability and Certificate of Conformance support available on request
Pre-shipment inspection report support for quality review
Trust signals
Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
Ordering workflow
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1
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2
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3
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Product overview
Overview
The CSD13302W is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for applications requiring efficient power management, such as in power supplies, motor drivers, and other electronic circuits.
Key Features:
-
Type: The CSD13302W is an N-channel MOSFET, which means it conducts when a positive voltage is applied to its gate relative to its source terminal.
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Voltage Rating: It typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
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Current Rating: The device can handle a continuous drain current (I_D) of approximately 60A, which allows it to manage significant power loads efficiently.
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R_DS(on): One of the standout features of the CSD13302W is its low on-resistance (R_DS(on)), which is usually around 5.5 mΩ at a gate voltage of 10V. This low resistance minimizes power loss and heat generation during operation, enhancing overall efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 2.5V, allowing for easy interfacing with low-voltage control signals.
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Package Type: The CSD13302W is housed in a compact, thermally efficient package, often in a DPAK or similar surface-mount configuration, which facilitates easy integration into circuit boards and helps with heat dissipation.
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Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a maximum junction temperature rating of around 150°C, making it suitable for demanding environments.
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Applications: Common applications for the CSD13302W include synchronous rectification in power supplies, DC-DC converters, battery management systems, and motor control circuits.
Performance Characteristics:
- Switching Speed: The CSD13302W features fast switching capabilities, which is essential for high-frequency applications, reducing switching losses and improving overall efficiency.
- Safe Operating Area (SOA): The device is designed to operate within a specified safe operating area, ensuring reliability and longevity in various applications.
Conclusion:
The CSD13302W from Texas Instruments is a versatile and efficient power MOSFET that excels in applications requiring high current handling and low power loss. Its combination of low on-resistance, high current capacity, and robust thermal performance makes it an ideal choice for modern power management solutions.
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Popular Specs Surfaced First
Product Attribute
Part Status
Active
Product Attribute
REACH Status
REACH Unaffected
Product Attribute
ECCN
EAR99
Product Attribute
Lead Free
Lead Free
Product Attribute
Mounting Type
Surface Mount
Product Attribute
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
6 Weeks
Packaging
Tape & Reel (TR)
Manufacturer
Texas
Element Configuration
Single
Terminal Form
BALL
Contact Plating
Copper, Silver, Tin
Width
0m
Height
625μm
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Power Dissipation-Max
1.8W Ta
Series
NexFET™
Current - Continuous Drain (Id) @ 25°C
1.6A Ta
Mount
Surface Mount
Pbfree Code
yes
Terminal Position
BOTTOM
Thickness
650μm
Number Of Terminations
4
Number Of Pins
4
Continuous Drain Current (ID)
1.6A
Length
0m
Additional Feature
ULTRA LOW RESISTANCE
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Gate To Source Voltage (Vgs)
10V
Fall Time (Typ)
7 ns
Vgs (Max)
±10V
Gate Charge (Qg) (Max) @ Vgs
7.8nC @ 4.5V
Base Part Number
CSD13302
Vgs(Th) (Max) @ Id
1.3V @ 250μA
Package / Case
4-UFBGA, DSBGA
Pulsed Drain Current-Max (IDM)
29A
Feedback Cap-Max (Crss)
196 pF
DS Breakdown Voltage-Min
12V
Rds On (Max) @ Id, Vgs
17.1m Ω @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
862pF @ 6V
Drain-Source On Resistance-Max
0.0285Ohm
Manufacturer'S Part No.
CSD13302W
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-609 Code
e1
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Turn-Off Delay Time
17 ns
Number Of Elements
1
Turn On Delay Time
6 ns
Drain To Source Voltage (Vdss)
12V
Rise Time
7ns
Common questions
Product FAQ
Quick answers for buyers reviewing CSD13302W, stock, documentation, and sourcing steps.
What is CSD13302W?
CSD13302W is a Transistors - FETs, MOSFETs - Single component from Texas Instruments. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for CSD13302W?
CSD13302W is listed with package reference -. The current product description is MOSFET N-CH 12V 1.6A, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is CSD13302W available in stock?
This page currently shows 43232 units in stock and 63968 units available for CSD13302W. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for CSD13302W?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for CSD13302W by Texas Instruments. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for CSD13302W?
A dedicated datasheet link is not currently listed for CSD13302W by Texas Instruments. Contact us with the part number and required parameters so the team can help confirm documentation during quotation.
How should buyers verify CSD13302W before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for CSD13302W before approving the order.
Transistors - FETs, MOSFETs - Single
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