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Supply original APT25GP120BDQ1G, Transistors - IGBTs - Single, by Microsemi

IGBT 1200V 69A 417W TO247

RoHS
Datasheet
Supply original APT25GP120BDQ1G, Transistors - IGBTs - Single, by Microsemi | TrustCompo

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Part Number

APT25GP120BDQ1G

Internal code

TCE000076456

Package

TO247

Manufacturer

Microsemi

Key specifications

Serise

POWER MOS 7®

Min Quantity

1

Category

Discrete Semiconductor Products

Sub Categroy

Transistors - IGBTs - Single

Description

IGBT 1200V 69A 417W TO247

key Attributes

-

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4 certifications

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ISO 9001

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AS9120B

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ISO 14001

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CoC Available on Request

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Product overview

Overview

IGBT 1200V 69A 417W TO247

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Detailed Specifications

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Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

JESD-609 Code

e1

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Export Classifications & Environmental

JESD-30 Code

R-PSFM-T3

Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-609 Code
e1
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PSFM-T3
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Number Of Elements
1
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector Pulsed (Icm)
90A
IGBT Type
PT
Part Status
Active
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Published
1999
Factory Lead Time
32 Weeks
Element Configuration
Single
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Package / Case
TO-247-3
Radiation Hardening
No
Pbfree Code
yes
Mount
Through Hole
Pin Count
3
Number Of Terminations
3
Length
21.46mm
Gate-Emitter Thr Voltage-Max
6V
Case Connection
COLLECTOR
Subcategory
Insulated Gate BIP Transistors
Sub-Categories
Transistors - IGBTs - Single
Polarity/Channel Type
N-CHANNEL
Voltage - Rated DC
1.2kV
Collector Emitter Breakdown Voltage
1.2kV
Additional Feature
LOW CONDUCTION LOSS
Collector Emitter Voltage (VCEO)
1.2kV
Manufacturer
Microsemi
Series
POWER MOS 7®
Transistor Application
POWER CONTROL
Weight
38.000013g
Height
5.31mm
Width
16.26mm
Gate-Emitter Voltage-Max
30V
Current Rating
69A
Manufacturer'S Part No.
APT25GP120BDQ1G
Collector Emitter Saturation Voltage
3.3V
Gate Charge
110nC
Test Condition
600V, 25A, 5 Ω, 15V
Max Power Dissipation
417W
Turn On Time
26 ns
Vce(On) (Max) @ Vge, Ic
3.9V @ 15V, 25A
Td (On/Off) @ 25°C
12ns/70ns
Max Collector Current
69A
Continuous Collector Current
69A
Switching Energy
500μJ (on), 440μJ (off)
Turn Off Time-Nom (Toff)
200 ns

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What is APT25GP120BDQ1G?

APT25GP120BDQ1G is a Transistors - IGBTs - Single component from Microsemi. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for APT25GP120BDQ1G?

APT25GP120BDQ1G is listed with package reference TO247. The current product description is IGBT 1200V 69A 417W TO247, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is APT25GP120BDQ1G available in stock?

This page currently shows 51573 units in stock and 13721 units available for APT25GP120BDQ1G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for APT25GP120BDQ1G by Microsemi. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for APT25GP120BDQ1G?

Yes. This page links to the datasheet for APT25GP120BDQ1G by Microsemi, so engineers and buyers can review package, ratings, and application details before purchase.

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