Supply original IKD04N60RATMA1, Transistors - IGBTs - Single, by Infineon Technologies

IGBT 600V 8A TO252-3

RoHS
Datasheet
Supply original IKD04N60RATMA1, Transistors - IGBTs - Single, by Infineon Technologies | TrustCompo

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Part Number

IKD04N60RATMA1

Internal code

TCE000069604

Package

TO252

Key specifications

Serise

TrenchStop™

Min Quantity

1

Description

IGBT 600V 8A TO252-3

key Attributes

-

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Product overview

Overview

IGBT 600V 8A TO252-3

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-30 Code

R-PSSO-G2

Export Classifications & Environmental

HTSUS

8541.29.0095

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Factory Lead Time
16 Weeks
Published
2005
Packaging
Tape & Reel (TR)
Halogen Free
Halogen Free
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Qualification Status
Not Qualified
Element Configuration
Single
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Pbfree Code
no
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Pin Count
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reflow Temperature-Max (S)
NOT SPECIFIED
Case Connection
COLLECTOR
Gate-Emitter Voltage-Max
20V
Subcategory
Insulated Gate BIP Transistors
Sub-Categories
Transistors - IGBTs - Single
Polarity/Channel Type
N-CHANNEL
Collector Emitter Breakdown Voltage
600V
Additional Feature
LOW CONDUCTION LOSS
Transistor Application
POWER CONTROL
Operating Temperature
-40°C~175°C TJ
Max Collector Current
8A
Collector Emitter Saturation Voltage
2.1V
Max Power Dissipation
75W
Collector Emitter Voltage (VCEO)
2.1V
Gate Charge
27nC
Turn On Time
20 ns
Series
TrenchStop™
Turn Off Time-Nom (Toff)
342 ns
Vce(On) (Max) @ Vge, Ic
2.1V @ 15V, 4A
Switching Energy
90μJ (on), 150μJ (off)
Test Condition
400V, 4A, 43 Ω, 15V
Manufacturer'S Part No.
IKD04N60RATMA1
Power - Max
75W
Gate-Emitter Thr Voltage-Max
5.7V
Td (On/Off) @ 25°C
14ns/146ns
Terminal Finish
Tin (Sn)
Number Of Elements
1
Input Type
Standard
Max Breakdown Voltage
600V
IGBT Type
Trench Field Stop
Reverse Recovery Time
43 ns
Current - Collector Pulsed (Icm)
12A

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What is IKD04N60RATMA1?

IKD04N60RATMA1 is a Transistors - IGBTs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IKD04N60RATMA1?

IKD04N60RATMA1 is listed with package reference TO252. The current product description is IGBT 600V 8A TO252-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IKD04N60RATMA1 available in stock?

This page currently shows 34750 units in stock and 23382 units available for IKD04N60RATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. This page links to the datasheet for IKD04N60RATMA1 by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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