Supply original FGD3N60LSDTM, Transistors - IGBTs - Single, by ON Semiconductor

IGBT 600V 6A 40W DPAK

RoHS
Datasheet
Supply original FGD3N60LSDTM, Transistors - IGBTs - Single, by ON Semiconductor | TrustCompo

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Part Number

FGD3N60LSDTM

Internal code

TCE000069570

Package

TO-252-3

Manufacturer

ON Semiconductor

Key specifications

Serise

-

Min Quantity

1

Description

IGBT 600V 6A 40W DPAK

key Attributes

-

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Product overview

Overview

IGBT 600V 6A 40W DPAK

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Lead Free
Lead Free
Mounting Type
Surface Mount
Min Operating Temperature
-55°C
Published
2004
Factory Lead Time
6 Weeks
Packaging
Tape & Reel (TR)
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
ON Semiconductor
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Categories
Discrete Semiconductor Products
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Number Of Terminations
2
Current Rating
6A
Voltage - Rated DC
600V
Max Operating Temperature
150°C
Max Power Dissipation
40W
Width
6.1mm
Length
6.6mm
Weight
260.37mg
Height
2.3mm
Case Connection
COLLECTOR
Gate-Emitter Voltage-Max
20V
Transistor Application
MOTOR CONTROL
Subcategory
Insulated Gate BIP Transistors
Sub-Categories
Transistors - IGBTs - Single
Polarity/Channel Type
N-CHANNEL
Collector Emitter Breakdown Voltage
600V
HTS Code
8541.29.00.95
Additional Feature
LOW CONDUCTION LOSS
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
6A
Gate-Emitter Thr Voltage-Max
5V
Test Condition
480V, 3A, 470 Ω, 10V
Vce(On) (Max) @ Vge, Ic
1.5V @ 10V, 3A
Switching Energy
250μJ (on), 1mJ (off)
Td (On/Off) @ 25°C
40ns/600ns
Base Part Number
FGD3N60
Turn On Time
85 ns
Manufacturer'S Part No.
FGD3N60LSDTM
Turn Off Time-Nom (Toff)
1420 ns
Gate Charge
12.5nC
Terminal Finish
Tin (Sn)
Number Of Elements
1
Input Type
Standard
Max Breakdown Voltage
600V
Current - Collector Pulsed (Icm)
25A
Reverse Recovery Time
234 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is FGD3N60LSDTM?

FGD3N60LSDTM is a Transistors - IGBTs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FGD3N60LSDTM?

FGD3N60LSDTM is listed with package reference TO-252-3. The current product description is IGBT 600V 6A 40W DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FGD3N60LSDTM available in stock?

This page currently shows 16356 units in stock and 10945 units available for FGD3N60LSDTM. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FGD3N60LSDTM by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FGD3N60LSDTM?

Yes. This page links to the datasheet for FGD3N60LSDTM by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify FGD3N60LSDTM before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FGD3N60LSDTM before approving the order.

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