Supply original DDA114EU-7-F, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, by Diodes Incorporated

TRANS 2PNP PREBIAS 0.2W SOT363

RoHS
Datasheet
Supply original DDA114EU-7-F, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, by Diodes Incorporated | TrustCompo

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Part Number

DDA114EU-7-F

Internal code

TCE000068976

Package

SOT363

Key specifications

Serise

-

Min Quantity

1

Description

TRANS 2PNP PREBIAS 0.2W SOT363

key Attributes

-

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Product overview

Overview

TRANS 2PNP PREBIAS 0.2W SOT363

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Detailed Specifications

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Popular Specs Surfaced First

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

ECCN Code

EAR99

Export Classifications & Environmental

HTSUS

8541.21.0075

Product Attribute

Part Status

Active

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
ECCN Code
EAR99
HTSUS
8541.21.0075
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Factory Lead Time
19 Weeks
Lead Free
Lead Free
Mounting Type
Surface Mount
Min Operating Temperature
-55°C
Published
2002
Packaging
Tape & Reel (TR)
Length
2.2mm
Width
1.35mm
Package / Case
6-TSSOP, SC-88, SOT-363
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Qualification Status
Not Qualified
Categories
Discrete Semiconductor Products
Manufacturer
Diodes Incorporated
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Height
1mm
Element Configuration
Dual
Max Power Dissipation
200mW
Max Operating Temperature
150°C
Weight
6.010099mg
Polarity
PNP
Collector Emitter Breakdown Voltage
50V
HFE Min
100
Voltage - Rated DC
-50V
Emitter Base Voltage (VEBO)
-5V
Collector Emitter Voltage (VCEO)
300mV
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Transition Frequency
250MHz
Max Collector Current
100mA
HTS Code
8541.21.00.75
Subcategory
BIP General Purpose Small Signal
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250MHz
Sub-Categories
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Resistor - Emitter Base (R2)
10k Ω
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 1
Continuous Collector Current
-100mA
Current Rating
-100mA
Collector Emitter Saturation Voltage
-300mV
DC Current Gain (HFE) (Min) @ Ic, Vce
30 @ 5mA 5V
Resistor - Base (R1)
10k Ω
Base Part Number
DDA114
Manufacturer'S Part No.
DDA114EU-7-F
Terminal Finish
Matte Tin (Sn)
Number Of Elements
2
Max Breakdown Voltage
50V
Transistor Type
2 PNP - Pre-Biased (Dual)

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What is DDA114EU-7-F?

DDA114EU-7-F is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for DDA114EU-7-F?

DDA114EU-7-F is listed with package reference SOT363. The current product description is TRANS 2PNP PREBIAS 0.2W SOT363, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is DDA114EU-7-F available in stock?

This page currently shows 15000 units in stock and 15000 units available for DDA114EU-7-F. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. This page links to the datasheet for DDA114EU-7-F by Diodes Incorporated, so engineers and buyers can review package, ratings, and application details before purchase.

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