Supply original DDTC114ECA-7-F, Transistors - Bipolar (BJT) - Single, Pre-Biased, by Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

RoHS
Datasheet
Supply original DDTC114ECA-7-F, Transistors - Bipolar (BJT) - Single, Pre-Biased, by Diodes Incorporated | TrustCompo

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Part Number

DDTC114ECA-7-F

Internal code

TCE000068460

Package

SOT23

Key specifications

Serise

-

Min Quantity

1

Description

TRANS PREBIAS NPN 200MW SOT23-3

key Attributes

-

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Product overview

Overview

The DDTC114ECA-7-F is a general-purpose NPN transistor designed for use in various electronic circuits and applications. It belongs to Diodes Incorporated's DDTC series of transistors known for their high performance, reliability, and compact size.

Key Features:

  • NPN Bipolar Junction Transistor (BJT): The DDTC114ECA-7-F is an NPN transistor, suitable for switching and amplification purposes in electronic circuits.

  • Small Surface-Mount Package: It comes in a compact SOT-23 surface-mount package, enabling high-density circuit designs and saving board space.

  • High Current and Voltage Rating: The transistor offers a moderate current and voltage rating, making it suitable for a wide range of low- to moderate-power applications.

  • Low Saturation Voltage: It features low saturation voltage characteristics, ensuring efficient switching performance and minimal power dissipation in ON state.

  • High Transition Frequency (fT): The transistor exhibits a high transition frequency, allowing for fast switching speeds and high-frequency operation in amplifier circuits.

  • RoHS Compliant: The DDTC114ECA-7-F complies with the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental sustainability and safety.

Applications:

  • Switching Circuits: Used as a switch in digital and analog circuits for controlling the flow of current.
  • Amplification: Integrated into amplifier circuits for signal amplification in audio, video, and communication systems.
  • Voltage Regulation: Employed in voltage regulator circuits for stable voltage output regulation.
  • Oscillator Circuits: Utilized in oscillator circuits for generating clock signals and timing references.
  • Logic Level Shifting: Used for level shifting and interfacing between different logic voltage levels in digital systems.

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Factory Lead Time

19 Weeks

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Factory Lead Time
19 Weeks
Lead Free
Lead Free
Mounting Type
Surface Mount
Min Operating Temperature
-55°C
Published
2011
Packaging
Tape & Reel (TR)
Operating Supply Voltage
50V
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Categories
Discrete Semiconductor Products
Manufacturer
Diodes Incorporated
Package / Case
TO-236-3, SC-59, SOT-23-3
Weight
7.994566mg
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Height
1mm
Number Of Terminations
3
Width
1.4mm
Max Power Dissipation
200mW
Max Output Current
100mA
Max Operating Temperature
150°C
Voltage - Rated DC
50V
Length
3.05mm
Current Rating
100mA
Collector Emitter Breakdown Voltage
50V
HFE Min
30
Polarity
NPN
Continuous Collector Current
100mA
Collector Emitter Voltage (VCEO)
300mV
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
Sub-Categories
Transistors - Bipolar (BJT) - Single, Pre-Biased
Transition Frequency
250MHz
Max Collector Current
100mA
HTS Code
8541.21.00.75
Subcategory
BIP General Purpose Small Signal
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250MHz
Resistor - Emitter Base (R2)
10 k Ω
Resistor - Base (R1)
10 k Ω
DC Current Gain (HFE) (Min) @ Ic, Vce
30 @ 5mA 5V
Base Part Number
DDTC114
Manufacturer'S Part No.
DDTC114ECA-7-F
Terminal Finish
Matte Tin (Sn)
Number Of Elements
1
Max Breakdown Voltage
50V
Transistor Type
NPN - Pre-Biased
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
ECCN Code
EAR99
HTSUS
8541.21.0075

Common questions

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Quick answers for buyers reviewing DDTC114ECA-7-F, stock, documentation, and sourcing steps.

What is DDTC114ECA-7-F?

DDTC114ECA-7-F is a Transistors - Bipolar (BJT) - Single, Pre-Biased component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for DDTC114ECA-7-F?

DDTC114ECA-7-F is listed with package reference SOT23. The current product description is TRANS PREBIAS NPN 200MW SOT23-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is DDTC114ECA-7-F available in stock?

This page currently shows 60292 units in stock and 58382 units available for DDTC114ECA-7-F. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for DDTC114ECA-7-F?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for DDTC114ECA-7-F by Diodes Incorporated. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for DDTC114ECA-7-F?

Yes. This page links to the datasheet for DDTC114ECA-7-F by Diodes Incorporated, so engineers and buyers can review package, ratings, and application details before purchase.

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