Supply original MJ11015G, Transistors - Bipolar (BJT) - Single, by ON Semiconductor

TRANS PNP DARL 120V 30A TO3

RoHS
Datasheet
Supply original MJ11015G, Transistors - Bipolar (BJT) - Single, by ON Semiconductor | TrustCompo

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Part Number

MJ11015G

Internal code

TCE000067119

Package

TO3

Manufacturer

ON Semiconductor

Key specifications

Serise

-

Min Quantity

1

Description

TRANS PNP DARL 120V 30A TO3

key Attributes

-

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Product overview

Overview

TRANS PNP DARL 120V 30A TO3

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

Not Applicable

JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Moisture Sensitivity Level (MSL)
Not Applicable
Part Status
Active
Packaging
Tray
Mounting Type
Through Hole
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Length
39.37mm
Peak Reflow Temperature (Cel)
260
Element Configuration
Single
Factory Lead Time
2 Weeks
Manufacturer
ON Semiconductor
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Subcategory
Other Transistors
Weight
4.535924g
Power Dissipation
200W
Contact Plating
Tin
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Pbfree Code
yes
Number Of Terminations
2
Surface Mount
NO
Terminal Position
BOTTOM
Number Of Pins
2
Pin Count
2
Case Connection
COLLECTOR
Sub-Categories
Transistors - Bipolar (BJT) - Single
HFE Min
1000
Transistor Application
AMPLIFIER
Polarity
PNP
Emitter Base Voltage (VEBO)
5V
Terminal Form
PIN/PEG
Current Rating
-30A
Width
26.67mm
Collector Emitter Breakdown Voltage
120V
Max Power Dissipation
200W
Collector Base Voltage (VCBO)
120V
Collector Emitter Voltage (VCEO)
120V
Voltage - Rated DC
-120V
Package / Case
TO-204AA, TO-3
Height
8.51mm
Collector Emitter Saturation Voltage
3V
Max Collector Current
30A
Transition Frequency
4MHz
Current - Collector Cutoff (Max)
1mA
Frequency - Transition
4MHz
Vce Saturation (Max) @ Ib, Ic
4V @ 300mA, 30A
Manufacturer'S Part No.
MJ11015G
Operating Temperature
-55°C~200°C TJ
DC Current Gain (HFE) (Min) @ Ic, Vce
1000 @ 20A 5V
Continuous Collector Current
30A
Number Of Elements
1
Transistor Type
PNP - Darlington

Common questions

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What is MJ11015G?

MJ11015G is a Transistors - Bipolar (BJT) - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for MJ11015G?

MJ11015G is listed with package reference TO3. The current product description is TRANS PNP DARL 120V 30A TO3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is MJ11015G available in stock?

This page currently shows 12586 units in stock and 12586 units available for MJ11015G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for MJ11015G?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for MJ11015G by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for MJ11015G?

Yes. This page links to the datasheet for MJ11015G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify MJ11015G before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for MJ11015G before approving the order.

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