Supply original HGTG18N120BND, Transistors - IGBTs - Single, by ON Semiconductor

IGBT 1200V 54A 390W TO247

RoHS
Datasheet
Supply original HGTG18N120BND, Transistors - IGBTs - Single, by ON Semiconductor | TrustCompo

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Part Number

HGTG18N120BND

Internal code

TCE000062907

Package

TO247

Manufacturer

ON Semiconductor

Key specifications

Serise

-

Min Quantity

1

Description

IGBT 1200V 54A 390W TO247

key Attributes

-

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Product overview

Overview

IGBT 1200V 54A 390W TO247

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

Mounting Type

Through Hole

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Packaging

Tube

Part Status
Active
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Published
2011
Factory Lead Time
10 Weeks
Element Configuration
Single
Length
15.87mm
Manufacturer
ON Semiconductor
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Package / Case
TO-247-3
Radiation Hardening
No
Pbfree Code
yes
Mount
Through Hole
Number Of Pins
3
Number Of Terminations
3
Width
4.82mm
Gate-Emitter Voltage-Max
20V
Transistor Application
MOTOR CONTROL
Subcategory
Insulated Gate BIP Transistors
Sub-Categories
Transistors - IGBTs - Single
Current Rating
54A
Voltage - Rated DC
1.2kV
HTS Code
8541.29.00.95
Collector Emitter Breakdown Voltage
1.2kV
Additional Feature
LOW CONDUCTION LOSS
Collector Emitter Voltage (VCEO)
1.2kV
Fall Time-Max (Tf)
200ns
Height
20.82mm
Polarity
NPN
Weight
6.39g
Power Dissipation
390W
Max Collector Current
54A
Vce(On) (Max) @ Vge, Ic
2.7V @ 15V, 18A
Turn On Time
38 ns
Switching Energy
1.9mJ (on), 1.8mJ (off)
Max Power Dissipation
390W
Collector Emitter Saturation Voltage
2.45V
Td (On/Off) @ 25°C
23ns/170ns
Test Condition
960V, 18A, 3 Ω, 15V
Manufacturer'S Part No.
HGTG18N120BND
Turn Off Time-Nom (Toff)
345 ns
Gate Charge
165nC
Number Of Elements
1
Reverse Recovery Time
75 ns
Rise Time
22ns
Input Type
Standard
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector Pulsed (Icm)
160A
Turn-Off Delay Time
170 μs
Turn On Delay Time
23 μs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is HGTG18N120BND?

HGTG18N120BND is a Transistors - IGBTs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for HGTG18N120BND?

HGTG18N120BND is listed with package reference TO247. The current product description is IGBT 1200V 54A 390W TO247, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is HGTG18N120BND available in stock?

This page currently shows 73126 units in stock and 45984 units available for HGTG18N120BND. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for HGTG18N120BND by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for HGTG18N120BND?

Yes. This page links to the datasheet for HGTG18N120BND by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify HGTG18N120BND before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for HGTG18N120BND before approving the order.

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