Supply original HGTP12N60A4D, Transistors - IGBTs - Single, by ON Semiconductor

IGBT 600V 54A 167W TO220AB

RoHS
Datasheet
Supply original HGTP12N60A4D, Transistors - IGBTs - Single, by ON Semiconductor | TrustCompo

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Part Number

HGTP12N60A4D

Internal code

TCE000062906

Package

TO-220-3

Manufacturer

ON Semiconductor

Key specifications

Serise

-

Min Quantity

1

Description

IGBT 600V 54A 167W TO220AB

key Attributes

-

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Product overview

Overview

IGBT 600V 54A 167W TO220AB

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Factory Lead Time
5 Weeks
Published
2002
Length
10.67mm
Height
9.4mm
Element Configuration
Single
Part Status
Not For New Designs
Manufacturer
ON Semiconductor
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Package / Case
TO-220-3
Weight
1.8g
Radiation Hardening
No
Pbfree Code
yes
Mount
Through Hole
Number Of Pins
3
Number Of Terminations
3
Voltage - Rated DC
600V
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 days ago)
Power Dissipation
167W
Case Connection
COLLECTOR
Sub-Categories
Transistors - IGBTs - Single
Polarity/Channel Type
N-CHANNEL
Collector Emitter Breakdown Voltage
600V
Width
4.83mm
Current Rating
54A
HTS Code
8541.29.00.95
Additional Feature
LOW CONDUCTION LOSS
Collector Emitter Voltage (VCEO)
600V
Transistor Application
POWER CONTROL
Collector Emitter Saturation Voltage
2V
Vce(On) (Max) @ Vge, Ic
2.7V @ 15V, 12A
Switching Energy
55μJ (on), 50μJ (off)
Max Collector Current
54A
Turn Off Time-Nom (Toff)
180 ns
Max Power Dissipation
167W
Base Part Number
HGTP12N60
Td (On/Off) @ 25°C
17ns/96ns
Continuous Collector Current
54A
Gate Charge
78nC
Manufacturer'S Part No.
HGTP12N60A4D
Turn On Time
33 ns
Test Condition
390V, 12A, 10 Ω, 15V
Terminal Finish
Tin (Sn)
Number Of Elements
1
Rise Time
8ns
Turn On Delay Time
17 ns
Turn-Off Delay Time
96 ns
Input Type
Standard
Current - Collector Pulsed (Icm)
96A
Reverse Recovery Time
18 ns

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What is HGTP12N60A4D?

HGTP12N60A4D is a Transistors - IGBTs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for HGTP12N60A4D?

HGTP12N60A4D is listed with package reference TO-220-3. The current product description is IGBT 600V 54A 167W TO220AB, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is HGTP12N60A4D available in stock?

This page currently shows 31809 units in stock and 31809 units available for HGTP12N60A4D. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for HGTP12N60A4D by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for HGTP12N60A4D?

Yes. This page links to the datasheet for HGTP12N60A4D by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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