Supply original FMMT555TA, Transistors - Bipolar (BJT) - Single, by Diodes Incorporated

TRANS PNP 150V 1A SOT23-3

RoHS
Datasheet
Supply original FMMT555TA, Transistors - Bipolar (BJT) - Single, by Diodes Incorporated | TrustCompo

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Part Number

FMMT555TA

Internal code

TCE000062841

Package

SOT23

Key specifications

Serise

-

Min Quantity

1

Description

TRANS PNP 150V 1A SOT23-3

key Attributes

-

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Product overview

Overview

The FMMT555TA is a high-performance NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It is designed for a variety of applications, including general-purpose switching and amplification.

Key Features:

  • Type: NPN Transistor
  • Package: Typically available in a TO-92 package, which is a small, cylindrical plastic housing that allows for easy mounting on printed circuit boards (PCBs).
  • Maximum Collector-Emitter Voltage (Vce): The FMMT555TA can handle a maximum Vce of around 60V, making it suitable for a wide range of applications.
  • Maximum Collector Current (Ic): It can support a collector current of up to 500mA, allowing it to drive moderate loads effectively.
  • DC Current Gain (hFE): The transistor exhibits a high DC current gain, typically in the range of 100 to 300, which enhances its efficiency in amplification applications.
  • Transition Frequency (fT): The FMMT555TA has a transition frequency of approximately 100 MHz, indicating its capability for high-speed switching applications.

Electrical Characteristics:

  • Collector-Base Breakdown Voltage (V(BR)CBO): This parameter is usually around 60V, ensuring reliable operation in high-voltage environments.
  • Emitter-Base Breakdown Voltage (V(BR)EBO): Typically rated at about 5V, which is important for protecting the transistor from reverse bias conditions.
  • Thermal Resistance: The device has a thermal resistance that allows it to operate efficiently without overheating, which is crucial for maintaining performance in various operating conditions.

Applications:

The FMMT555TA is versatile and can be used in:

  • Switching Circuits: Ideal for applications requiring fast on/off control.
  • Amplifiers: Suitable for audio and RF amplification due to its high gain and frequency response.
  • Signal Processing: Can be used in various signal processing applications where linearity and speed are essential.

Additional Information:

  • Operating Temperature Range: The transistor is designed to operate within a specified temperature range, typically from -55°C to +150°C, making it suitable for both consumer and industrial applications.
  • Lead Configuration: The TO-92 package typically has three leads: collector, base, and emitter, which are arranged in a specific order for easy identification and connection.

Overall, the FMMT555TA from Diodes Incorporated is a reliable and efficient NPN transistor that meets the needs of various electronic applications, providing excellent performance in both switching and amplification tasks.

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Matte Tin (Sn) - annealed

Product Parameter

Number Of Elements

1

Product Parameter

Transistor Type

PNP

Product Parameter

Max Breakdown Voltage

150V

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Terminal Finish
Matte Tin (Sn) - annealed
Number Of Elements
1
Transistor Type
PNP
Max Breakdown Voltage
150V
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
15 Weeks
Published
2006
Termination
SMD/SMT
Gain Bandwidth Product
100MHz
Packaging
Cut Tape (CT)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Max Power Dissipation
500mW
Height
1.1mm
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Voltage - Rated DC
-150V
Manufacturer
Diodes Incorporated
Package / Case
TO-236-3, SC-59, SOT-23-3
Weight
7.994566mg
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Length
3mm
Number Of Terminations
3
Power Dissipation
500mW
Width
1.4mm
Frequency
100MHz
Max Collector Current
1A
Sub-Categories
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type
PNP
Current - Collector Cutoff (Max)
100nA ICBO
Collector Base Voltage (VCBO)
160V
Collector Emitter Breakdown Voltage
150V
Transition Frequency
100MHz
Collector Emitter Voltage (VCEO)
150V
Emitter Base Voltage (VEBO)
-5V
Current Rating
-1A
Continuous Collector Current
-1A
Collector Emitter Saturation Voltage
-350mV
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
HFE Min
50
Base Part Number
FMMT555
Manufacturer'S Part No.
FMMT555TA
DC Current Gain (HFE) (Min) @ Ic, Vce
50 @ 300mA 10V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
ECCN Code
EAR99
HTSUS
8541.21.0075

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Product FAQ

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What is FMMT555TA?

FMMT555TA is a Transistors - Bipolar (BJT) - Single component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FMMT555TA?

FMMT555TA is listed with package reference SOT23. The current product description is TRANS PNP 150V 1A SOT23-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FMMT555TA available in stock?

This page currently shows 39000 units in stock and 39000 units available for FMMT555TA. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for FMMT555TA?

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