Supply original BCP56-10T1G, Transistors - Bipolar (BJT) - Single, by ON Semiconductor

TRANS NPN 80V 1A SOT-223

RoHS
Datasheet
Supply original BCP56-10T1G, Transistors - Bipolar (BJT) - Single, by ON Semiconductor | TrustCompo

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Part Number

BCP56-10T1G

Internal code

TCE000062059

Package

SOT-223

Manufacturer

ON Semiconductor

Key specifications

Serise

-

Min Quantity

1

Description

TRANS NPN 80V 1A SOT-223

key Attributes

-

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Product overview

Overview

The BCP56-10T1G is a PNP Bipolar Junction Transistor (BJT) manufactured by ON Semiconductor. BJTs are commonly used in electronic circuits for amplification and switching purposes.

Key Features:

  • Type: PNP Bipolar Junction Transistor (BJT)
  • Collector-Base Voltage: -80V
  • Emitter-Base Voltage: -5V
  • Continuous Collector Current: -1A
  • Low Saturation Voltage: Provides efficient current flow with minimal voltage drop when fully turned on.
  • Fast Switching Speed: Enables rapid switching between on and off states, suitable for high-speed switching applications.
  • Small Form Factor Package: Available in a compact SOT-223 package for space-constrained applications.
  • RoHS Compliant: Complies with environmental standards for the Restriction of Hazardous Substances, ensuring environmental safety.
  • Lead-Free: Contains no lead in its construction, meeting lead-free soldering requirements for modern electronics manufacturing.

Applications: 

  • Amplification: Used as amplifiers in audio amplifiers, signal processing circuits, and RF (Radio Frequency) circuits.
  • Switching circuits: Employed in electronic switches, relay drivers, and motor control circuits for controlling the flow of current.
  • Voltage regulation: Integrated into voltage regulator circuits for regulating and stabilizing voltage levels in power supplies and voltage regulators.
  • LED drivers: Used to drive LEDs (Light Emitting Diodes) in lighting and display applications.
  • Power management: Integrated into power management circuits for battery charging, power supply regulation, and DC-DC conversion.
  • Overvoltage protection: Integrated into protection circuits to safeguard sensitive electronic components from voltage spikes and surges.

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Detailed Specifications

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

ECCN Code

EAR99

Export Classifications & Environmental

HTSUS

8541.29.0075

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
ECCN Code
EAR99
HTSUS
8541.29.0075
Number Of Elements
1
Transistor Type
NPN
Max Breakdown Voltage
80V
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
8 Weeks
Published
2005
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
ON Semiconductor
Package / Case
TO-261-4, TO-261AA
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Power Dissipation
1.5W
Subcategory
Other Transistors
Operating Temperature
-65°C~150°C TJ
Surface Mount
YES
Contact Plating
Tin
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Pbfree Code
yes
Max Power Dissipation
1.5W
Current Rating
1A
Number Of Terminations
4
Height
1.65mm
Width
3.7mm
Length
6.7mm
Number Of Pins
4
Pin Count
4
Max Collector Current
1A
Voltage - Rated DC
80V
Gain Bandwidth Product
130MHz
Case Connection
COLLECTOR
Collector Base Voltage (VCBO)
100V
Sub-Categories
Transistors - Bipolar (BJT) - Single
Transistor Application
AMPLIFIER
Emitter Base Voltage (VEBO)
5V
Polarity/Channel Type
NPN
Current - Collector Cutoff (Max)
100nA ICBO
HFE Min
25
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Saturation Voltage
500mV
Collector Emitter Breakdown Voltage
80V
Collector Emitter Voltage (VCEO)
80V
Frequency
130MHz
Transition Frequency
130MHz
Base Part Number
BCP56
DC Current Gain (HFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Manufacturer'S Part No.
BCP56-10T1G

Common questions

Product FAQ

Quick answers for buyers reviewing BCP56-10T1G, stock, documentation, and sourcing steps.

What is BCP56-10T1G?

BCP56-10T1G is a Transistors - Bipolar (BJT) - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for BCP56-10T1G?

BCP56-10T1G is listed with package reference SOT-223. The current product description is TRANS NPN 80V 1A SOT-223, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is BCP56-10T1G available in stock?

This page currently shows 13606 units in stock and 10496 units available for BCP56-10T1G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for BCP56-10T1G?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for BCP56-10T1G by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for BCP56-10T1G?

Yes. This page links to the datasheet for BCP56-10T1G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify BCP56-10T1G before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for BCP56-10T1G before approving the order.

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