Supply original NTLJD4116NT1G, Transistors - FETs, MOSFETs - Arrays, by ON Semiconductor

MOSFET 2N-CH 30V 2.5A 6-WDFN

RoHS
Datasheet
Supply original NTLJD4116NT1G, Transistors - FETs, MOSFETs - Arrays, by ON Semiconductor | TrustCompo

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Part Number

NTLJD4116NT1G

Internal code

TCE000057565

Package

-

Manufacturer

ON Semiconductor

Key specifications

Serise

-

Min Quantity

1

Description

MOSFET 2N-CH 30V 2.5A 6-WDFN

key Attributes

-

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Product overview

Overview

MOSFET 2N-CH 30V 2.5A 6-WDFN

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Tin (Sn)

Product Parameter

FET Technology

METAL-OXIDE SEMICONDUCTOR

Product Parameter

Number Of Elements

2

Product Parameter

FET Feature

Logic Level Gate

Product Parameter

Turn On Delay Time

4.8 ns

Product Parameter

Turn-Off Delay Time

14.2 ns

Terminal Finish
Tin (Sn)
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number Of Elements
2
FET Feature
Logic Level Gate
Turn On Delay Time
4.8 ns
Turn-Off Delay Time
14.2 ns
Rise Time
11.8ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.21.0095
ECCN Code
EAR99
REACH Status
REACH Unaffected
ECCN
EAR99
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2006
Factory Lead Time
6 Weeks
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Peak Reflow Temperature (Cel)
260
Manufacturer
ON Semiconductor
Height
750μm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Power Dissipation
1.5W
Operating Temperature
-55°C~150°C TJ
Vgs(Th) (Max) @ Id
1V @ 250μA
Terminal Form
C BEND
Surface Mount
YES
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Gate To Source Voltage (Vgs)
8V
Voltage - Rated DC
30V
Length
2mm
Element Configuration
Dual
Width
2mm
Drain To Source Breakdown Voltage
30V
Additional Feature
LOGIC LEVEL COMPATIBLE
Drain Current-Max (Abs) (ID)
3A
Package / Case
6-WDFN Exposed Pad
Max Power Dissipation
710mW
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Current Rating
4.6A
Continuous Drain Current (ID)
3.7A
FET Type
2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C
2.5A
Gate Charge (Qg) (Max) @ Vgs
6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
427pF @ 15V
Drain-Source On Resistance-Max
0.09Ohm
Rds On (Max) @ Id, Vgs
70m Ω @ 2A, 4.5V
Fall Time (Typ)
11.8 ns
Manufacturer'S Part No.
NTLJD4116NT1G

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NTLJD4116NT1G is a Transistors - FETs, MOSFETs - Arrays component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

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