Supply original NTLJD3115PT1G, Transistors - FETs, MOSFETs - Arrays, by ON Semiconductor

MOSFET 2P-CH 20V 2.3A 6-WDFN

RoHS
Datasheet
Supply original NTLJD3115PT1G, Transistors - FETs, MOSFETs - Arrays, by ON Semiconductor | TrustCompo

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Part Number

NTLJD3115PT1G

Internal code

TCE000057564

Package

-

Manufacturer

ON Semiconductor

Key specifications

Serise

-

Min Quantity

1

Description

MOSFET 2P-CH 20V 2.3A 6-WDFN

key Attributes

-

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Product overview

Overview

MOSFET 2P-CH 20V 2.3A 6-WDFN

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Product Attribute

Factory Lead Time

9 Weeks

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
9 Weeks
Mounting Type
Surface Mount
Published
2006
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Manufacturer
ON Semiconductor
Height
750μm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Power Dissipation
1.5W
Operating Temperature
-55°C~150°C TJ
Subcategory
Other Transistors
Vgs(Th) (Max) @ Id
1V @ 250μA
Terminal Form
C BEND
Surface Mount
YES
Contact Plating
Tin
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Voltage - Rated DC
-20V
Gate To Source Voltage (Vgs)
8V
Length
2mm
Element Configuration
Dual
Width
2mm
Additional Feature
LOGIC LEVEL COMPATIBLE
Package / Case
6-WDFN Exposed Pad
Resistance
100mOhm
Max Power Dissipation
710mW
Fall Time (Typ)
15 ns
FET Type
2 P-Channel (Dual)
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Drain To Source Breakdown Voltage
20V
Gate Charge (Qg) (Max) @ Vgs
6.2nC @ 4.5V
Continuous Drain Current (ID)
3.3A
Current - Continuous Drain (Id) @ 25°C
2.3A
Input Capacitance (Ciss) (Max) @ Vds
531pF @ 10V
Rds On (Max) @ Id, Vgs
100m Ω @ 2A, 4.5V
Base Part Number
NTLJD3115P
Manufacturer'S Part No.
NTLJD3115PT1G
Current Rating
-4.1A
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.21.0095
ECCN Code
EAR99
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number Of Elements
2
Turn On Delay Time
6 ns
Rise Time
15ns
FET Feature
Logic Level Gate
Turn-Off Delay Time
19.8 ns

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What is NTLJD3115PT1G?

NTLJD3115PT1G is a Transistors - FETs, MOSFETs - Arrays component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for NTLJD3115PT1G?

NTLJD3115PT1G is listed with package reference -. The current product description is MOSFET 2P-CH 20V 2.3A 6-WDFN, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is NTLJD3115PT1G available in stock?

This page currently shows 73269 units in stock and 60897 units available for NTLJD3115PT1G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for NTLJD3115PT1G?

Yes. This page links to the datasheet for NTLJD3115PT1G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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