Supply original DMG6601LVT-7, Transistors - FETs, MOSFETs - Arrays, by Diodes Incorporated

MOSFET N/P-CH 30V 26TSOT

RoHS
Datasheet
Supply original DMG6601LVT-7, Transistors - FETs, MOSFETs - Arrays, by Diodes Incorporated | TrustCompo

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Part Number

DMG6601LVT-7

Internal code

TCE000056238

Package

SOT-23-6

Key specifications

Serise

-

Min Quantity

1

Description

MOSFET N/P-CH 30V 26TSOT

key Attributes

-

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ISO 14001

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Product overview

Overview

MOSFET N/P-CH 30V 26TSOT

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

HTSUS

8541.21.0095

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.21.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-G6
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
15 Weeks
Published
2009
Packaging
Cut Tape (CT)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Max Junction Temperature (Tj)
150°C
Package / Case
SOT-23-6 Thin, TSOT-23-6
Operating Mode
ENHANCEMENT MODE
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Manufacturer
Diodes Incorporated
Additional Feature
HIGH RELIABILITY
Vgs(Th) (Max) @ Id
1.5V @ 250μA
Reference Standard
AEC-Q101
Contact Plating
Gold
Mount
Surface Mount
Pbfree Code
yes
Width
1.6mm
Length
2.9mm
Number Of Terminations
6
Reflow Temperature-Max (S)
NOT SPECIFIED
Height
1mm
Number Of Pins
26
Max Power Dissipation
850mW
Drain To Source Breakdown Voltage
30V
Gate To Source Voltage (Vgs)
12V
Continuous Drain Current (ID)
2.5A
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Power Dissipation
850mW
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
FET Type
N and P-Channel
Fall Time (Typ)
2.2 ns
Drain Current-Max (Abs) (ID)
3.8A
Gate Charge (Qg) (Max) @ Vgs
12.3nC @ 10V
Current - Continuous Drain (Id) @ 25°C
3.8A 2.5A
Drain-Source On Resistance-Max
0.055Ohm
Rds On (Max) @ Id, Vgs
55m Ω @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds
422pF @ 15V
Manufacturer'S Part No.
DMG6601LVT-7
Base Part Number
DMG6601
Terminal Finish
Matte Tin (Sn)
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number Of Channels
2
Number Of Elements
2
FET Feature
Logic Level Gate
Rise Time
4.6ns
Turn On Delay Time
1.7 ns
Turn-Off Delay Time
18.3 ns

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What is DMG6601LVT-7?

DMG6601LVT-7 is a Transistors - FETs, MOSFETs - Arrays component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for DMG6601LVT-7?

DMG6601LVT-7 is listed with package reference SOT-23-6. The current product description is MOSFET N/P-CH 30V 26TSOT, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is DMG6601LVT-7 available in stock?

This page currently shows 30020 units in stock and 19180 units available for DMG6601LVT-7. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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