Supply original BC847BPDW1T1G, Transistors - Bipolar (BJT) - Arrays, by ON Semiconductor

TRANS NPN/PNP 45V 0.1A SOT363

RoHS
Datasheet
Supply original BC847BPDW1T1G, Transistors - Bipolar (BJT) - Arrays, by ON Semiconductor | TrustCompo

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Part Number

BC847BPDW1T1G

Internal code

TCE000055580

Package

SOT363

Manufacturer

ON Semiconductor

Key specifications

Serise

-

Min Quantity

1

Description

TRANS NPN/PNP 45V 0.1A SOT363

key Attributes

-

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Product overview

Overview

TRANS NPN/PNP 45V 0.1A SOT363

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Part Status
Active
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2004
Factory Lead Time
8 Weeks
Halogen Free
Halogen Free
Termination
SMD/SMT
Gain Bandwidth Product
100MHz
Packaging
Cut Tape (CT)
Package / Case
6-TSSOP, SC-88, SOT-363
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Manufacturer
ON Semiconductor
Width
1.25mm
Max Power Dissipation
380mW
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Surface Mount
YES
Contact Plating
Tin
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Current Rating
1A
Length
2mm
Element Configuration
Dual
Height
900μm
Output Voltage
5V
Frequency
100MHz
Power Dissipation
380mW
Voltage - Rated DC
45V
Transistor Application
AMPLIFIER
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Transition Frequency
100MHz
Sub-Categories
Transistors - Bipolar (BJT) - Arrays
Max Collector Current
100mA
Subcategory
BIP General Purpose Small Signal
Polarity
NPN, PNP
DC Current Gain (HFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Voltage (VCEO)
45V
Collector Emitter Saturation Voltage
600mV
HFE Min
150
Collector Emitter Breakdown Voltage
45V
Base Part Number
BC847BPD
Current - Collector Cutoff (Max)
15nA ICBO
Manufacturer'S Part No.
BC847BPDW1T1G
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
ECCN Code
EAR99
HTSUS
8541.21.0075
Number Of Elements
2
Max Breakdown Voltage
45V
Transistor Type
NPN, PNP

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What is BC847BPDW1T1G?

BC847BPDW1T1G is a Transistors - Bipolar (BJT) - Arrays component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for BC847BPDW1T1G?

BC847BPDW1T1G is listed with package reference SOT363. The current product description is TRANS NPN/PNP 45V 0.1A SOT363, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is BC847BPDW1T1G available in stock?

This page currently shows 61436 units in stock and 48960 units available for BC847BPDW1T1G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for BC847BPDW1T1G by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for BC847BPDW1T1G?

Yes. This page links to the datasheet for BC847BPDW1T1G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for BC847BPDW1T1G before approving the order.

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