Supply original IRF7342TRPBF, Transistors - FETs, MOSFETs - Arrays, by Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8-SOIC

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Supply original IRF7342TRPBF, Transistors - FETs, MOSFETs - Arrays, by Infineon Technologies | TrustCompo

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Part Number

IRF7342TRPBF

Internal code

TCE000055092

Package

8-SOIC

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET 2P-CH 55V 3.4A 8-SOIC

key Attributes

-

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Product overview

Overview

The IRF7342TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency power management applications, making it suitable for a variety of uses in power supplies, motor control, and other electronic circuits.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The device is typically housed in a TO-220 package, which provides good thermal performance and is suitable for mounting on heatsinks.
  3. Voltage Rating: The IRF7342TRPBF has a maximum drain-source voltage (V_DS) rating of 40V, allowing it to handle a wide range of applications without risk of breakdown.
  4. Current Rating: It can handle continuous drain currents (I_D) of up to 50A, making it capable of driving high loads efficiently.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.025 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing overall efficiency.
  6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 2V to 4V, which allows for easy interfacing with low-voltage control signals.
  7. Switching Speed: The IRF7342TRPBF features fast switching capabilities, which is essential for applications requiring rapid on/off control, such as in PWM (Pulse Width Modulation) circuits.
  8. Thermal Characteristics: The device has a high thermal conductivity, allowing it to dissipate heat effectively. It has a maximum junction temperature (T_J) rating of 175°C, which provides a robust operating range.
  9. Applications: Common applications include DC-DC converters, power inverters, motor drivers, and other high-frequency switching applications.

Electrical Characteristics:

  • Gate-Source Voltage (V_GS): Maximum ±20V
  • Drain-Source Breakdown Voltage (V(BR)DSS): 40V
  • Total Gate Charge (Q_g): Typically around 30 nC, which influences the drive requirements for the gate.
  • Body Diode Characteristics: The IRF7342TRPBF includes an intrinsic body diode, which allows for reverse current flow and can be beneficial in certain applications.

Reliability and Compliance:

The IRF7342TRPBF is designed to meet stringent quality and reliability standards, making it suitable for automotive and industrial applications. It is also RoHS compliant, ensuring that it is free from hazardous substances.

Conclusion:

The IRF7342TRPBF from Infineon Technologies is a versatile and efficient N-channel MOSFET that is well-suited for a variety of power management applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it an excellent choice for engineers looking to optimize their designs for performance and efficiency.

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

FET Technology

METAL-OXIDE SEMICONDUCTOR

Product Parameter

Number Of Channels

2

Product Parameter

Number Of Elements

2

Product Parameter

Turn On Delay Time

14 ns

Product Parameter

Drain To Source Voltage (Vdss)

55V

Product Parameter

Rise Time

10ns

FET Technology
METAL-OXIDE SEMICONDUCTOR
Number Of Channels
2
Number Of Elements
2
Turn On Delay Time
14 ns
Drain To Source Voltage (Vdss)
55V
Rise Time
10ns
FET Feature
Logic Level Gate
Turn-Off Delay Time
43 ns
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Published
1999
Packaging
Tape & Reel (TR)
Width
3.9878mm
Terminal Form
GULL WING
Max Junction Temperature (Tj)
150°C
Height
1.75mm
Lead Free
Contains Lead, Lead Free
Package / Case
8-SOIC (0.154, 3.90mm Width)
Max Power Dissipation
2W
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Voltage - Rated DC
-55V
Vgs(Th) (Max) @ Id
1V @ 250μA
Resistance
105mOhm
Length
4.9784mm
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
8
Number Of Terminations
8
Gate To Source Voltage (Vgs)
20V
Element Configuration
Dual
Power Dissipation
2W
Row Spacing
6.3 mm
Drain To Source Breakdown Voltage
-55V
Nominal Vgs
-1 V
Threshold Voltage
-1V
Additional Feature
ULTRA LOW RESISTANCE
Current Rating
-3.4A
FET Type
2 P-Channel (Dual)
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Fall Time (Typ)
22 ns
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
Recovery Time
80 ns
Input Capacitance (Ciss) (Max) @ Vds
690pF @ 25V
Rds On (Max) @ Id, Vgs
105m Ω @ 3.4A, 10V
Continuous Drain Current (ID)
-3.4A
Current - Continuous Drain (Id) @ 25°C
3.4A
Avalanche Energy Rating (Eas)
114 mJ
Base Part Number
IRF7342PBF
Manufacturer'S Part No.
IRF7342TRPBF

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What is IRF7342TRPBF?

IRF7342TRPBF is a Transistors - FETs, MOSFETs - Arrays component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF7342TRPBF?

IRF7342TRPBF is listed with package reference 8-SOIC. The current product description is MOSFET 2P-CH 55V 3.4A 8-SOIC, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRF7342TRPBF available in stock?

This page currently shows 56038 units in stock and 14174 units available for IRF7342TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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