What is a cross-reference page for IPD088N06N3GBTMA1?
This page groups mapped replacement options for IPD088N06N3GBTMA1 so buyers and engineers can compare alternatives before requesting a quote or approving a substitute.
Alternative part analysis
Compare mapped replacement and alternative options for IPD088N06N3GBTMA1, then verify package, specifications, and application fit before approval.
This product currently does not show a published cross-reference list. Use RFQ support if your team needs an alternative part review.
Specification view
A side-by-side view of the source part and its mapped alternatives so buyers and engineers can screen package, availability, lifecycle, and key descriptors before RFQ.
The left column stays visible so buyers can keep the spec label in view while scanning multiple alternatives.
| Parameter Comparison Chart | Current part IPD088N06N3GBTMA1 Infineon Technologies |
|---|---|
| Part Number | IPD088N06N3GBTMA1 |
| Manufacturer | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Package | TO252 |
| Series | OptiMOS™ |
| Key Attributes | - |
| Description | MOSFET N-CH 60V 50A TO252-3 |
| Lifecycle | - |
| Stock | 110,332 |
| Available | 44,702 |
| Min Order | 1 |
| Datasheet | Available |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| RoHS Status | ROHS3 Compliant |
| REACH SVHC | No SVHC |
| JESD-30 Code | R-PSSO-G2 |
| HTSUS | 8541.29.0095 |
| ECCN Code | EAR99 |
| Turn-Off Delay Time | 20 ns |
| Terminal Finish | Tin (Sn) |
| Number of Elements | 1 |
| Turn On Delay Time | 15 ns |
| Rise Time | 40ns |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Max Dual Supply Voltage | 60V |
| Part Status | Active |
| Published | 2008 |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| Lead Free | Contains Lead |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Factory Lead Time | 18 Weeks |
| Terminal Form | GULL WING |
| Reach Compliance Code | not_compliant |
| Qualification Status | Not Qualified |
| Case Connection | DRAIN |
| Operating Temperature | -55°C~175°C TJ |
| Operating Mode | ENHANCEMENT MODE |
| Manufacturer | Infineon Technologies |
| Technology | MOSFET (Metal Oxide) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| JEDEC-95 Code | TO-252AA |
| FET Type | N-Channel |
| Sub-Categories | Transistors - FETs, MOSFETs - Single |
| Vgs (Max) | ±20V |
| Categories | Discrete Semiconductor Products |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
| Pbfree Code | no |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Terminal Position | SINGLE |
| Number of Terminations | 2 |
| Pin Count | 3 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Gate to Source Voltage (Vgs) | 20V |
| Reflow Temperature-Max (s) | NOT SPECIFIED |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Threshold Voltage | 3V |
| Pulsed Drain Current-Max (IDM) | 200A |
| Fall Time (Typ) | 5 ns |
| Halogen Free | Not Halogen Free |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Continuous Drain Current (ID) | 50A |
| Series | OptiMOS™ |
| Power Dissipation | 71W |
| Power Dissipation-Max | 71W Tc |
| Drain-source On Resistance-Max | 0.0088Ohm |
| Manufacturer's Part No. | IPD088N06N3GBTMA1 |
| Vgs(th) (Max) @ Id | 4V @ 34μA |
| Rds On (Max) @ Id, Vgs | 8.8m Ω @ 50A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 30V |
| Actions |
Cross-reference FAQ
Short answers for teams reviewing IPD088N06N3GBTMA1 replacement and equivalent-part options.
This page groups mapped replacement options for IPD088N06N3GBTMA1 so buyers and engineers can compare alternatives before requesting a quote or approving a substitute.
Not automatically. Cross-reference mapping helps shortlist candidates, but package, electrical behavior, qualification scope, and approval rules still need to be checked before release.
Start with package, series, key attributes, lifecycle status, stock position, datasheet access, and the mapped pin-to-pin or cross-reference note. Then confirm application-specific requirements in the datasheet and RFQ stage.
Yes. Use the product links or RFQ actions on this page to request pricing, availability, documentation, and sourcing support for any listed alternative part.
Check the lifecycle row on this page first. If buyers need a fast starting point, the strongest mapped replacement currently surfaced here is , followed by the other alternatives shown in the comparison table.
Engineering support
If your team is unsure whether a mapped alternative to IPD088N06N3GBTMA1 from Infineon Technologies is really usable, contact us for help on package fit, pin compatibility, key parameter gaps, and qualification-facing review questions.
Email our engineering support contact at [email protected], or use the contact page if the question should be routed across sourcing, engineering, and support.
Review whether the alternate path looks credible from package, footprint, and pin-level perspectives.
Surface the electrical, interface, or application-fit questions that still need confirmation before approval.
Organize the documentation, datasheet evidence, and validation checkpoints your internal team may still require.
