Supply original MBR130LSFT1G, Diodes - Rectifiers - Single, by ON Semiconductor

The MBR130LSFT1G is a Schottky barrier rectifier diode manufactured by ON Semiconductor. This component is designed for high-efficiency applications, particularly in power management and rectification circuits. Here’s a detailed description of its features and specifications:

Key Features:

1. Type: Schottky Barrier Rectifier

   • The MBR130LSFT1G utilizes a Schottky design, which allows for lower forward voltage drop and faster switching speeds compared to standard diodes.

2. Voltage Rating:

   • The diode has a maximum reverse voltage (V_R) rating of 30 volts, making it suitable for various low to moderate voltage applications.

3. Current Rating:

   • It can handle a continuous forward current (I_F) of up to 1.0 ampere, which is ideal for applications requiring moderate current flow.

4. Forward Voltage Drop:

   • The typical forward voltage drop (V_F) is around 0.45 volts at 1 ampere, which contributes to its efficiency by minimizing power loss during operation.

5. Reverse Recovery Time:

   • The MBR130LSFT1G features a very fast reverse recovery time, which is a significant advantage in high-frequency applications, reducing switching losses.

6. Package Type:

   • This diode is available in a surface-mount package (SMD), specifically the SOD-123 package, which is compact and suitable for automated assembly processes.

7. Thermal Characteristics:

   • The diode has a maximum junction temperature (T_J) rating of 150 degrees Celsius, allowing it to operate in a wide range of thermal environments.

8. Applications:

   • Commonly used in power supplies, DC-DC converters, and other applications where efficient rectification is required. It is also suitable for use in battery charging circuits and solar power systems.

9. RoHS Compliance:

   • The MBR130LSFT1G is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it an environmentally friendly choice for modern electronic designs.

Electrical Characteristics:

• Reverse Leakage Current (I_R): Typically low, which helps in maintaining efficiency.
• Capacitance (C): The diode exhibits low junction capacitance, which is beneficial for high-speed switching applications.

Summary:

The MBR130LSFT1G from ON Semiconductor is a reliable and efficient Schottky barrier rectifier diode, ideal for applications requiring low forward voltage drop and fast switching capabilities. Its compact SMD package, combined with its robust electrical characteristics, makes it a popular choice in modern electronic designs, particularly in power management and conversion applications.