Supply original FMMT493TA, Transistors - Bipolar (BJT) - Single, by Diodes Incorporated

TRANS NPN 100V 1A SOT23-3

RoHS
Datasheet
Supply original FMMT493TA, Transistors - Bipolar (BJT) - Single, by Diodes Incorporated | TrustCompo

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Part Number

FMMT493TA

Internal code

TCE000050743

Package

SOT23

Key specifications

Serise

-

Min Quantity

1

Description

TRANS NPN 100V 1A SOT23-3

key Attributes

-

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Product overview

Overview

The FMMT493TA is a high-performance NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It is designed for a variety of applications, including general-purpose switching and amplification.

Key Features:

  • Type: NPN Transistor
  • Package: Typically available in a TO-92 package, which is a cylindrical plastic housing that allows for easy mounting and handling.
  • Maximum Collector-Emitter Voltage (Vce): The FMMT493TA can handle a maximum Vce of around 40V, making it suitable for various electronic circuits that require moderate voltage levels.
  • Maximum Collector Current (Ic): It can support a collector current of up to 800mA, allowing it to drive loads effectively in switching applications.
  • DC Current Gain (hFE): The transistor exhibits a high DC current gain, typically in the range of 100 to 300, which enhances its efficiency in amplification applications.
  • Transition Frequency (fT): The FMMT493TA has a transition frequency of approximately 100 MHz, indicating its capability for high-speed switching applications.

Electrical Characteristics:

  • Collector-Base Breakdown Voltage (Vcb): The maximum Vcb is around 50V, providing additional robustness in circuit designs.
  • Emitter-Base Breakdown Voltage (Veb): The maximum Veb is typically around 5V, which is important for ensuring the transistor operates reliably under various conditions.
  • Thermal Resistance: The thermal resistance is designed to manage heat dissipation effectively, ensuring stable operation even under high load conditions.

Applications:

The FMMT493TA is suitable for a wide range of applications, including:

  • Signal Amplification: Ideal for audio and RF amplification circuits.
  • Switching Applications: Can be used in relay drivers, motor drivers, and other switching circuits.
  • General Purpose: Its versatility makes it suitable for various electronic projects and designs.

Additional Information:

  • Operating Temperature Range: The transistor is rated for operation over a wide temperature range, typically from -55°C to +150°C, making it suitable for both consumer and industrial applications.
  • Lead Configuration: The TO-92 package typically has three leads: collector, base, and emitter, which are easily identifiable for circuit integration.

Overall, the FMMT493TA from Diodes Incorporated is a reliable and versatile NPN transistor that meets the needs of various electronic applications, providing excellent performance in both switching and amplification roles.

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Factory Lead Time

15 Weeks

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
15 Weeks
Termination
SMD/SMT
Published
2012
Packaging
Cut Tape (CT)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Frequency
150MHz
Max Power Dissipation
500mW
Height
1.1mm
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Subcategory
Other Transistors
Manufacturer
Diodes Incorporated
Package / Case
TO-236-3, SC-59, SOT-23-3
Weight
7.994566mg
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Length
3mm
Number Of Terminations
3
Power Dissipation
500mW
Current Rating
1A
Width
1.4mm
Voltage - Rated DC
60V
Voltage
100V
Max Collector Current
1A
Current
1A
Collector Emitter Voltage (VCEO)
100V
Sub-Categories
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage
100V
Emitter Base Voltage (VEBO)
5V
Current - Collector Cutoff (Max)
100nA
Polarity/Channel Type
NPN
HFE Min
100
Gain Bandwidth Product
150MHz
Transition Frequency
150MHz
Continuous Collector Current
1A
Manufacturer'S Part No.
FMMT493TA
Base Part Number
FMMT493
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
DC Current Gain (HFE) (Min) @ Ic, Vce
100 @ 250mA 10V
Collector Base Voltage (VCBO)
120V
Collector Emitter Saturation Voltage
600mV
Terminal Finish
Matte Tin (Sn) - annealed
Number Of Elements
1
Max Breakdown Voltage
100V
Transistor Type
NPN
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
ECCN Code
EAR99
HTSUS
8541.21.0075

Common questions

Product FAQ

Quick answers for buyers reviewing FMMT493TA, stock, documentation, and sourcing steps.

What is FMMT493TA?

FMMT493TA is a Transistors - Bipolar (BJT) - Single component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FMMT493TA?

FMMT493TA is listed with package reference SOT23. The current product description is TRANS NPN 100V 1A SOT23-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FMMT493TA available in stock?

This page currently shows 77926 units in stock and 40067 units available for FMMT493TA. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for FMMT493TA?

Yes. This page links to the datasheet for FMMT493TA by Diodes Incorporated, so engineers and buyers can review package, ratings, and application details before purchase.

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