What is HGT1S10N120BNS?
HGT1S10N120BNS is a Transistors - IGBTs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
Supply original HGT1S10N120BNS, Transistors - IGBTs - Single, by ON Semiconductor
IGBT 1200V 35A 298W TO263AB
RoHS
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Key specifications
Serise
-
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Categroy
Transistors - IGBTs - SingleDescription
IGBT 1200V 35A 298W TO263AB
key Attributes
-
Technical document
Open The Official Datasheet
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
Authenticity Verification
CoC Available on Request
Pre-Shipment Inspection
Responsive RFQ Support
Why buyers trust this sourcing flow
Our quality workflow is designed to reduce counterfeit risk and support confident procurement. Components are reviewed through documented handling and inspection steps so buyers can evaluate sourcing with stronger authenticity controls.
Structured product content
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Product overview
Overview
IGBT 1200V 35A 298W TO263AB
Full technical breakdown
Detailed Specifications
Review grouped attributes and parameters without scanning one oversized table.
Fast scan
Popular Specs Surfaced First
Product Attribute
REACH Status
REACH Unaffected
Product Attribute
ECCN
EAR99
Product Attribute
Lead Free
Lead Free
Product Attribute
Packaging
Tube
Product Attribute
Mounting Type
Surface Mount
Product Attribute
Mount
Surface Mount, Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Mounting Type
Surface Mount
Mount
Surface Mount, Through Hole
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Current Rating
35A
Length
10.67mm
Element Configuration
Single
Part Status
Not For New Designs
Manufacturer
ON Semiconductor
Factory Lead Time
44 Weeks
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight
1.31247g
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Pbfree Code
yes
Number Of Pins
3
Number Of Terminations
2
Height
4.83mm
Width
9.65mm
Current
35A
Case Connection
COLLECTOR
Transistor Application
MOTOR CONTROL
Sub-Categories
Transistors - IGBTs - Single
Polarity/Channel Type
N-CHANNEL
Voltage - Rated DC
1.2kV
HTS Code
8541.29.00.95
Base Part Number
HGT1S10N120
Vce(On) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Td (On/Off) @ 25°C
23ns/165ns
Continuous Collector Current
55A
Collector Emitter Breakdown Voltage
1.2kV
Additional Feature
LOW CONDUCTION LOSS
Switching Energy
320μJ (on), 800μJ (off)
Power Dissipation
298W
Turn Off Time-Nom (Toff)
330 ns
Test Condition
960V, 10A, 10 Ω, 15V
Collector Emitter Voltage (VCEO)
1.2kV
Collector Emitter Saturation Voltage
2.7V
Max Collector Current
35A
Turn On Time
32 ns
Gate Charge
100nC
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 1 day ago)
Voltage
1.2kV
Manufacturer'S Part No.
HGT1S10N120BNS
Max Power Dissipation
312W
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Number Of Elements
1
Input Type
Standard
IGBT Type
NPT
Current - Collector Pulsed (Icm)
80A
Max Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Common questions
Product FAQ
Quick answers for buyers reviewing HGT1S10N120BNS, stock, documentation, and sourcing steps.
What package and description are listed for HGT1S10N120BNS?
HGT1S10N120BNS is listed with package reference TO-263-3. The current product description is IGBT 1200V 35A 298W TO263AB, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is HGT1S10N120BNS available in stock?
This page currently shows 28534 units in stock and 28534 units available for HGT1S10N120BNS. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for HGT1S10N120BNS?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for HGT1S10N120BNS by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for HGT1S10N120BNS?
Yes. This page links to the datasheet for HGT1S10N120BNS by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify HGT1S10N120BNS before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for HGT1S10N120BNS before approving the order.
Transistors - IGBTs - Single
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HGT1S10N120BNST
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TO-263-3
RoHS
IGBT 1200V 35A 298W TO263AB
Reference price
$2.32Add to RFQ list
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